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OP525 OP525DA OP525F - Datasheet Archive
in 1210 SMD Package OP525, OP525DA, OP525F OP525 and OP525DA OP525F Features: · · · · ·
Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525 OP525, OP525DA OP525DA, OP525F OP525F OP525 OP525 and OP525DA OP525DA OP525F OP525F Features: · · · · · · · · High Speed and High photo sensitivity Fast response time 1210 package size High Current Gain Water clear and black lens choices Narrow Viewing Receiving Angle Compatible with IR Reflow soldering process Moisture Sensitivity Level: MSL3 Description: These devices consist of an NPN silicon phototransistor and photo darlington mounted in a miniature SMD package with a 1210 size chip carrier that is compatible with most automated mounting and position sensing equipment. The OP525 OP525 devices have a 1.8mm domed lens and viewing acceptance angle of 25°C with higher collector current gains due to the lenses on package. The OP525 OP525 and OP525DA OP525DA have a water clear lens that senses ambient light to higher wavelengths for applications from 450nm to 1120nm. The OP525F OP525F has a black domed lens to reduce ambient light noise. The OP525 OP525 series are tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than is possible with phototransistors. Applications: · · · · · Ordering Information Non-contact position sensing Part Number Optical encoders Reflective and transmissive sensors Viewing Angle Phototransistor 25°C OP525DA OP525DA OP525F OP525F Machine automation Sensor OP525 OP525 Datum detection Photo Darlington Phototransistor 25°C 25°C OP525 OP525 and OP525DA OP525DA OP525 OP525 OP525DA OP525DA 1 1 2 2 Pin # Transistor 1 RoHS DIMENSIONS ARE IN: Collector 2 Emitter [MILLIMETERS] INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. - 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue C 11/2010 Page 1 of 5 Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525 OP525, OP525DA OP525DA, OP525F OP525F OP525F OP525F Package Dimensions Recommended Solder Pad Patterns Note: Dimensions mm (inches) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue C 11/2010 Page 2 of 5 OPTEK Technology Inc. - 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525 OP525, OP525DA OP525DA, OP525F OP525F Absolute Maximum Ratings (TA=25°C unless otherwise noted) -40o C to +100o C Storage Temperature Range Operating Temperature Range -25o C to +85o C Lead Soldering Temperature(1) 260° C Collector-Emitter Voltage OP525 OP525, OP525F OP525F OP525DA OP525DA 30 V 35 V Emitter-Collector Voltage 5V Collector Current OP525 OP525, OP525F OP525F OP525DA OP525DA 20 mA 30 mA Power Dissipation(2) OP525 OP525, OP525F OP525F OP525DA OP525DA 75 mW 100 mW Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS 2.0 1.0 10.0 - - - - 0.4 1.7 V IC = 100 µA, EE = 1.0 mW/cm2 (3) IC = 1 mA, EE = 0.5 mW/cm2 (3) - - 100 200 nA VCC= 10.0 V (4) IC= 100 µA, EE = 0 IC= 1 mA, EE = 0 Input Diode IC(ON) VCE(SAT) ICEO On-State Collector Current OP525F OP525F OP525 OP525 OP525DA OP525DA Collector-Emitter Saturation Voltage OP525 OP525, OP525F OP525F OP525DA OP525DA Collector-Emitter Dark Current OP525 OP525, OP525F OP525F OP525DA OP525DA mA VCE = 5.0 V, EE = 0.5 mW/cm2 VCE = 5.0 V, EE = 1.5 mW/cm2 (3) VCE = 5.0 V, EE = 0.15 mW/cm2 (3) VBR(CEO) Collector-Emitter Breakdown Voltage OP525 OP525, OP525F OP525F OP525DA OP525DA 30 35 - - V VBR(ECO) Emitter-Collector Breakdown Voltage OP525 OP525, OP525F OP525F OP525DA OP525DA 5 5 - - V - 15 50 - µs IC= 1 mA, RL = 1K IC= 1 mA, RL = 1K 750 - 1100 nm - tr, tf 0.5 Rise and Fall Times OP525 OP525, OP525F OP525F OP525DA OP525DA Spectral Bandwidth OP525F OP525F IE= 100 µA, EE = 0 IE= 100 µA, EE = 0 Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.33 mW/° C above 25° C. 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formulate ICEO = 10(0.04 t - ¾), where TA is the ambient temperature in ° C. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. - 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue C 11/2010 Page 3 of 5 Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525 OP525, OP525DA OP525DA, OP525F OP525F OP525 OP525 and OP525DA OP525DA Relative Response vs. Wavelength 100% Relative Response 80% 60% 40% 20% 0% 400 500 600 700 800 900 1000 1100 Wavelength (nm) OP525 OP525 Collector Current-IC (mA) vs Collector-Emiiter Voltage VCE (V) Collector Current-IC (mA) vs Optical Power-Ee(mW/cm2) 100 3.5 Collector Current-Ic (mA) Collector Current-Ic (mA) 3.0 2.5 Ee = 2.0mW/cm2 2.0 Ee = 1.5mW/cm2 1.5 Ee = 1.25mW/cm2 0.1 Ee = 1.0mW/cm2 10 1.0 0.1 0.5 Ee = 0.5mW/cm2 0 1 2 3 Collector-Emitter Voltage-VCE (V) 4 0 1 3 5 2 Optical Power-Ee(mW/cm ) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue C 11/2010 Page 4 of 5 OPTEK Technology Inc. - 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Silicon Phototransistor and Photo Darlington in 1210 SMD Package OP525 OP525, OP525DA OP525DA, OP525F OP525F OP525DA OP525DA Collector Current-IC 10 35 Collector Current-Ic (mA) Collector Current-Ic (mA) Collector Current-IC (mA) vs 30 10 25 Ee = 0.50mW/ 20 Ee = 0.40mW/ 15 1.0 Ee = 0.30mW/ 10 Ee = 0.20mW/ 5 .1 Ee = 0.10mW/ 0 1 2 3 0 4 .25 .5 1 Optical Power-Ee(mW/cm2) Collector-Emitter Voltage-VCE OP525F OP525F Sensitivity Chart Spectral Sensitivity Relative Response Vs. Wavelength Relative Collector Current vs.Irradiance OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. - 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue C 11/2010 Page 5 of 5