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OM9007SC OM9008SC OM9009SC OM9010SC MO-078 OM803 - Datasheet Archive
OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC MO-078 PACKAGE 100V Thru 500V,
OM9007SC OM9007SC OM9008SC OM9008SC OM9009SC OM9009SC OM9010SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC MO-078 MO-078 PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET And Fast Recovery Power Rectifier FEATURES · · · · · Uncommitted MOSFET And Rectifier In One Package Isolated Hermetic 5-Pin Metal Package Fast Switching, Low RDS(on) MOSFET Ultra-Fast Recovery, Low VF Rectifier Available Screened To OM803 OM803 DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and ultra-fast recovery rectifier with innovative packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PART NUMBER OM9007SC OM9007SC OM9008SC OM9008SC OM9009SC OM9009SC OM9010SC OM9010SC VDS 100 V 200 V 400 V 500 V MOSFET RDS(on) .18 .40 1.0 1.5 ID 14 A 9A 5.5 A 4.5 A VF 0.975 V 0.925 V 1.5 V 1.5 V RECTIFIER IO 14 A 9A 5.5 A 4.5 A SCHEMATIC MOSFET GATE POWER RECTIFIER 4 11 R4 Supersedes 1 07 R3 3.1 - 201 TRR 35 ns 35 ns 50 ns 50 ns 3.1 ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) STATIC P/N OM9007SC OM9007SC (100 V) STATIC P/N OM9008SC OM9008SC (200 V) MOSFET Parameter BVDSS Drain-Source Breakdown Voltage Min. Typ. Max. Units Test Conditions 100 V 2.0 VGS = 0, MOSFET Parameter BVDSS Drain-Source Breakdown ID = 250 mA Voltage Min. Typ. Max. Units Test Conditions 200 V VGS(th) Gate-Threshold Voltage 4.0 V VDS = VGS, ID = 1 mA VGS(th) Gate-Threshold Voltage 4.0 V VDS = VGS, ID = 1 mA IGSSF Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSF Gate-Body Leakage Forward 100 nA VGS = +20 V IGSSR Gate-Body Leakage Reverse -100 nA VGS = -20 V IGSSR Gate-Body Leakage Reverse -100 nA VGS = -20 V IDSS Zero Gate Voltage Drain 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.25 mA 0.1 Current ID(on) On-State Drain Current1 0.2 1.0 mA 14 VDS(on) Static Drain-Source On-State A 1.2 Voltage1 RDS(on) Static Drain-Source On-State 1.44 V 0.15 0.18 Resistance1 RDS(on) Static Drain-Source On-State VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 8 A VGS = 10 V, ID = 8 A, 3.1 - 202 Forward Transductance1 Ciss Current ID(on) 0.2 On-State Drain Current1 1.0 mA 9.0 VDS(on) Static Drain-Source On-State VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 5.0 A 0.4 VGS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A, 0.54 0.76 Resistance1 TC = 125° C V 2.0 0.25 Resistance1 RDS(on) Static Drain-Source On-State VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, A 1.25 Voltage1 RDS(on) Static Drain-Source On-State TC = 125 C DYNAMIC gfs 0.1 TC = 125° C VGS = 10 V, ID = 8 A 0.31 Resistance1 VDS = 0.8 Max. Rat., VGS = 0, 2.0 VGS = 0, ID = 250 mA TC = 125 C DYNAMIC 4.4 S VDS 2 VDS(on), ID = 8 A gfs Forward Transductance1 5 S VDS 2 VDS(on), ID = 5.0 A Input Capacitance 750 pF VGS = 0 Ciss Input Capacitance 780 pF VGS = 0 VDS = 25 V 4.0 3.0 Coss Output Capacitance 250 pF VDS = 25 V Coss Output Capacitance 150 pF Crss Reverse Transfer Capacitance 100 pF f = 1 MHz Crss Reverse Transfer Capacitance 55 pF f = 1 MHz td(on) Turn-On Delay Time 15 ns VDD = 30 V, ID @ 8 A td(on) Turn-On Delay Time 9 ns VDD = 75 V, ID @ 5.0 A tr Rise Time 35 ns Rg = 7.5 W , RL = 4.3 W tr Rise Time 18 ns Rg = 7.5 W , RL = 15 W td(off) Turn-Off Delay Time 38 ns td(off) Turn-Off Delay Time 45 ns tf Fall Time 23 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 27 ns (MOSFET switching times are essentially independent of operating temperature.) THERMAL RESISTANCE THERMAL RESISTANCE RthJC Junction-to-Case 1.8 °C/W RthJA Junction-to-Ambient 80 °C/W RthJC Free Air Operation RECTIFIER PARAMETER VFM Maximum Forward Voltage IR Maximum Reverse Current Trr Maximum Reverse Recovery Time* Junction-to-Case 1.8 °C/W RthJA Junction-to-Ambient 80 °C/W Free Air Operation RECTIFIER PARAMETER .975 V TJ = 25°C, IC = 14 A .900 V TJ = 100°C, IC = 14 A 10 µA TJ = 25°C, VR = 100 V 1 mA TJ = 100°C, VR = 100 V 35 ns TJ = 25°C VFM Maximum Forward Voltage IR Maximum Reverse Current Trr Maximum Reverse Recovery Time* .925 V TJ = 25°C, IC = 9 A .85 V TJ = 100°C, IC = 9 A 15 µA TJ = 25°C, VR = 200 V 1 mA TJ = 100°C, VR = 200 V 35 ns TJ = 25°C RJC Junction-to-Case 2.0 °C/W RJC Junction-to-Case 2.0 °C/W RJA Junction-to-Ambient 80 °C/W Free Air Operation RJA Junction-to-Ambient 80 °C/W Free Air Operation * Measured in Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. * Measured in Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. OM9007SC OM9007SC - OM9010SC OM9010SC 3.1 ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) STATIC P/N OM9009SC OM9009SC (400 V) STATIC P/N OM9010SC OM9010SC (500 V) MOSFET Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) Gate-Threshold Voltage IGSSF Zero Gate Voltage Drain V Gate-Body Leakage Reverse IDSS 400 Gate-Body Leakage Forward IGSSR Min. Typ. Max. Units Test Conditions 2.0 On-State Drain Current1 ID = 250 mA 0.2 V VDS = VGS, ID = 1 mA VGS(th) Gate-Threshold Voltage nA VGS = +20 V IGSSF nA VGS = -20 V IGSSR mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 1.0 mA 5.5 A 2.4 RDS(on) Static Drain-Source On-State Resistance1 1.0 1.6 Resistance1 3.0 0.8 RDS(on) Static Drain-Source On-State V 2.0 VDS = 0.8 Max. Rat., VGS = 0, V 2.0 VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 3 A VGS = 10 V, ID = 3 A VGS = 10 V, ID = 3 A, On-State Drain Current1 0.2 V VDS = VGS, ID = 1 mA nA VGS = +20 V -100 nA VGS = -20 V 0.25 mA 1.0 mA 4.5 VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State 1.3 RDS(on) Static Drain-Source On-State Resistance1 TC = 125° C VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A 1.5 2.9 Resistance1 VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, A 3.25 3.75 Voltage1 TC = 125 C 4.0 0.1 Current ID(on) VGS = 0, ID = 250 mA 100 TC = 125° C DYNAMIC 3.1 - 203 Ciss 500 Gate-Body Leakage Reverse 0.25 Min. Typ. Max. Units Test Conditions Gate-Body Leakage Forward -100 Voltage1 Forward Transductance1 Voltage 4.0 0.1 VDS(on) Static Drain-Source On-State gfs MOSFET Parameter BVDSS Drain-Source Breakdown 100 Current ID(on) VGS = 0, 3.3 VGS = 10 V, ID = 2.5 A, TC = 125 C DYNAMIC 3.6 S VDS 2 VDS(on), ID = 3.0 A gfs Forward Transductance1 2.6 S VDS 2 VDS(on), ID = 2.5 A Input Capacitance 700 pF VGS = 0 Ciss Input Capacitance 700 pF VGS = 0 VDS = 25 V 3.0 2.5 Coss Output Capacitance 70 pF VDS = 25 V Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 20 pF f = 1 MHz Crss Reverse Transfer Capacitance 30 pF f = 1 MHz td(on) Turn-On Delay Time 18 ns VDD = 175 V, ID @ 3.0 A td(on) Turn-On Delay Time 18 ns VDD = 255 V, ID @ 2.5 A tr Rise Time 20 ns Rg = 10 W , RL = 56 W tr Rise Time 20 ns Rg = 7.5 W , RL = 88 W td(off) Turn-Off Delay Time 40 ns td(off) Turn-Off Delay Time 42 ns tf Fall Time 25 ns (MOSFET switching times are essentially independent of operating temperature.) tf Fall Time 25 ns (MOSFET switching times are essentially independent of operating temperature.) THERMAL RESISTANCE THERMAL RESISTANCE RthJC Junction-to-Case 1.8 °C/W RthJA Junction-to-Ambient 80 °C/W RthJC Free Air Operation RECTIFIER PARAMETER VFM Maximum Forward Voltage IR Maximum Reverse Current Trr Maximum Reverse Recovery Time* Junction-to-Case 1.8 °C/W RthJA Junction-to-Ambient 80 °C/W Free Air Operation RECTIFIER PARAMETER 1.5 V TJ = 25°C, IC = 5.5 A 1.4 V TJ = 100°C, IC = 5.5 A 80 µA TJ = 25°C, VR = 400 V 2.0 mA TJ = 100°C, VR = 400 V 50 ns TJ = 25°C VFM Maximum Forward Voltage IR Maximum Reverse Current Trr Maximum Reverse Recovery Time* TJ = 25°C, IC = 4.5 A 1.5 V 1.4 V TJ = 100°C, IC = 4.5 A 100 µA TJ = 25°C, VR = 500 V 2.5 mA TJ = 100°C, VR = 500 V 50 ns TJ = 25°C RJC Junction-to-Case 2.0 °C/W RJC Junction-to-Case 2.0 °C/W RJA Junction-to-Ambient 80 °C/W Free Air Operation RJA Junction-to-Ambient 80 °C/W Free Air Operation * Measured in Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. * Measured in Circuit IF = 1/2 A, IR = 1.0 A, IREC = 1/4 A 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 3.1 OM9007SC OM9007SC - OM9010SC OM9010SC MECHANICAL SPECIFICATIONS PIN CONNECTION Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: 1 2 3 4 Gate Source Drain Anode Cathode 5 MECHANICAL OUTLINE 3.1 .270 .240 .695 .685 .165 .155 .045 .035 .835 .815 .707 .697 .550 .530 .092 MAX. .750 .500 .005 .100 TYP. .035 .025 .140 TYP. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246