NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 'L.ozoT-I) KbII'H ^•'OÎ^-54' .125-13.161 MIN (8.261 OP AMP-INPUT [T" NC [J LOGIC INPUT "A" |~3~ LOGIC ... | OCR Scan |
5 pages, |
VH 73 vco LG Tv tuner ECG867 AV17 vhf op-amp VHF Op Amp philips vhf uhf tuner diode for clippers T-77-07-05 ECG867 abstract |
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| Abstract: 2SC2944 2SC2944 TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING - : Outline Drawings I Features • SiSX'f'y^-y^' High speed switching • ffclfJftTOJE Low saturation voltage • EffffHi High reliability -ffiiS! ' Applications • Ä7-fl/t'p eJUxl't'^i® Colour & B/W TV power supply • T-i7-Üb? Active power filter Industrial use power supply(series regulator) • -flS^ÌJ^ffi General purpose power amplifier 15.5 Q ® © m 5.45,OI5.45 f32'al Ï-8T 4.5 1 : Base 2 : Collector 3 : Emitter JEDEC EIAJ SC-65 SC-65 - /Ét&fcÎrftt ... | OCR Scan |
3 pages, |
SC-65 MJ 03 AI BH RV 2SC2944 2SC2944 abstract |
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| Abstract: 6011 Series Transition Plug 2.54mmX2.54mm(0.100"X0.100") -upun Material: Housing: 30% Glass filled PBT UL94V-0 UL94V-0. Contacts: Phosphor Bronze. Plating:Selective gold plated: Tin plated over nickel. Cable: 1.27mm(0.050") pitch flat cable. Electrical Characteristics: Current Rating:1 AMP. Insulator Resistance:5000MQ 5000MQ min. at DC 500V. Contact Resistance: 20mfi max. at DC 100mA. Operating Temperature:-55"C~+105'C. Features: * Fast connection of flat cable, to PC board. at ca board. * Recommended 28AWG 28AWG 1. ... | OCR Scan |
1 pages, |
A145 UL94V-0 5000MQ UL94V-0 abstract |
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| Abstract: SEC iÏT/\f7 Compound Transistor CEI F3P fâi/trt INPNX y - LT 3 u ? ^ • J- S v 4 t- K, 3 ^ ? 9 • xF^^E^M :* - K£r*ï®ÊL£, High hFE ï&fiiftM h ? > Ï * ? T, OAfâ^n.mfàïïnr 7-t o. X- ? K -7 >f £ Lttltt. Ri = 2.2 kQ, R2 = 10 k& Vol = 0.12 V @ Vi=5.0 V, Ic = 0.5 A ommMmco t- FZftMir^t i~0 mm^fà (Ta = 25 °C ) *PWsS10 ms, Duty Cycle=S50 % mmmvk (Ta = 25 °C ) KWm Wi : mm) 0.8 + 0.1 7.0 MAX. 0.6 + 0.1 0.6 ± 0.1 0.6 + 0.1 1.7 1.7 TI S B& TE fë \ÌL VcBO 60 + 10 V VcEO 60+10 V z- i - ... | OCR Scan |
4 pages, |
T460 T108 CE1F3P datasheet abstract |
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| Abstract: MOS Field Effect Power Transistor 2SK830 2SK830 FET M v nimm 2SK830 2SK830 Ii, FET T" * y ffiifc rW'ìt frîâiiT Î5 o, SÌ Ji m X A # it OVDSS=500 V, Id(DC)= + 15A 01&*>mt/C RDS(on)^0.45 Q OrÜiSX-f 7f>/tt. ton = 90 ns TYP. toff = 205 ns TYP. ommUb i t>*lfif.f V .y -> > •v'r-i?Tto ftwm : mm) tstus _ li 7 max ti"' 6-5 max. 4h4}t lÊ^ft^^fê (Ta = 25 °C ) m g »8- ^r tk fi 5E » KM^-V-xlSmEE VDSS VGS = 0 500 V r- h • y-xra«EE Vgss vDS=o ±20 V KM >iSiÛî(ïl: fiS) ID(DC) ±15 A Id( puis ... | OCR Scan |
6 pages, |
TL08 015 4h4 1 22-Sf JE 33 T460 STB-26 2SK830 je 243 26-JS 2SK830 abstract |
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| Abstract: V t Silicon Transistor 2SA1151 2SA1151 pnpx *) v jimm PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use FEATURES om&frtf}^* vCF:n : so v o 2SC2718 2SC2718 t 3 / > 9 'J tftffltiifo ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) m H aft -if vu tò ¥ li. • - x ftìi a: VCBO -60 V ti ^L IT: VcEO -50 V i ; v ? • ^ - * Itti ' ff. VtBO -5.0 V n u 9 ^ 1 il Ic -100 mA m x Pr 250 mW X + > ? x 3 > l£ T, 125 "C i* # J® Ts -55-+ 125 "C PACKAGE DIMENSIONS (Unit : mm) 5.2 MAX. X < S in in 0 ... | OCR Scan |
4 pages, |
PA33 JE 33 05B2 2SC2718 I084 2SA1151 2SA1151 abstract |
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| Abstract: • 5/-h MOS Field Effect Power Transistor MOS FET Itffl 2SK785 2SK785 Ii, > HB'*'?-MOS FET (f-fî : mm) miX RDS,„„, O MX'f 7T'to ton = 105 ns TYP. toff = 240 ns TYP. O^Wfjäf&ÄjWSt». (Ta = 25 °C ) (7^ 2.2±0.2 5.45 2 3 1.0±0.2[^f-75T 0.6 + 0.1 5.45 4.7 MAX. 1.5 2.8 + 0.1 KU >(D) m s ft S fê km > • y-xp„iti± ^DSS vGS = o 500 V r- h • y-xW' VGSS vDS = o + 20 V KW>"iÄ(ii: it) ID(DO ... | OCR Scan |
6 pages, |
TL08 015 TC-6200 T460 2SK785 2SK785 abstract |
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| Abstract: • 5/-h MOS MOS Field Effect Power Transistor 2SK819 2SK819 Nft^ MOS FET 7f> DC-DC 3 ? # m O Voss = 500 V, Idim RDS(on) < 1.0 Û (VGS = 10 V, ID = 5A) oliX'i -y f- > ton =35 ns TYP. toff = 90 ns TYP. W&EI (TO : mm) (Ta = 25 °C) 3.2 + 0.2 15.7 MAX. O / / S IO / r 4' " _ / to o +1 1 2 3 oo J 1 - 3.4 MA) ? ? + 0.2 1.0 + 0 [ 5.45 1 5.45 ! 0.6 + 0.1 4.7 MAX. 1.5 2.8 + 0.1 KM >(D) Q il a «g- f- S fê * ... | OCR Scan |
6 pages, |
T108 diode B3F jb 5531 2SK819 2SK819 abstract |
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| Abstract: SEC 5s-S> • 2/-h IM'J* Thyristors 8P4J,8P4J-Z SAï-^KSCR 8P4J, 8P4J-Z (Tc = 75 °C ) % it It(rms) 12.6 A V " v t > '.li ... | OCR Scan |
6 pages, |
T540 T460 T210 sis 496 datasheet abstract |
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| Abstract: • S/-h MOS ì&mittozk'^- MOS Field Effect Power Transistor N ^-V^JW^- MOS FET nimm 2SK992 2SK992 Ü, Nf-^A^i^'^-MOS FET T", 5 VltilSUC * < , x 4 >y f- > rWtt t «ftT H £ i-*, yuy-i K, 7>-7°i7)sijfpiiftüfto it Rds(o„)-v-z.fwmi± Vdss VGS = 0 100 V r- h • v-xfSi' Vgss VDS = 0 ±15 V KM >«1(1: if) Id ... | OCR Scan |
6 pages, |
U71E T460 T108 2SK992 2SK992 abstract |
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| Abstract: V- u - > h =7 Silicon Transistors NPN nihf^^TJUm^1)^ ÎÊJi IB ^ J: Tfx+y*- NPN Silicon Epitaxial Transistor Audio Frequency Amplifier, Switching ^/FEATURES O |ifjhFET"3-o hFE = 1000- 3200 @VCE = 5.0 V, Ic = 1.0 mA °föVCE(sat)T"i~0 VCE(sat) = 0.07 V TYP. @IC/IB = 50 m A/5.0 mA O^VeboT-To VEBO : 12 V (2SC3622 2SC3622) VERO : 15 V (2SC3622A 2SC3622A) fê#&*£fê/ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) un Hg- 5E fë # fu. 2SC3622 2SC3622 2SC3622A 2SC3622A VcBO 60 V =! v 9 9 • i ì -y 9T3M&. VcEO 50 V Vebo 12 15 V t ... | OCR Scan |
4 pages, |
PA33 OP 5380 2SC3622A 2SC3622 pj 0266 TRANSISTOR XL08 XL08 datasheet abstract |
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