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ODD45W Datasheet

Part Manufacturer Description PDF Type
ODD-45W Opto Diode HIGH-SENSITIVITY GaAlAs PHOTODIODE Original
ODD-45W Opto Diode HIGH-SENSITIVITY GaAlAs PHOTODIODE Original
ODD-45W Opto Diode 1mm2 High-Sensitivity Photodiode in TO-46 Pkg Original

ODD45W

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: HIGH-SENSITIVITY GaAlAs PHOTODIODE .006 MAX GLASS ABOVE CAP TOP EDGE .120 45 W .095 45 W ISOL.100 .085 ODD-45W .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .187 .156 .181 .152 CATHODE .500 MIN. .012 MAX GLASS ABOVE CAP TOP EDGE .111 95 W .095 95 W ISOL.098 .078 , .160 .145 ODD-45W/95W CASE LEAD ANODE ON NON ISOLATED VERSION CATHODE .200 .210 , Standard Silicon Photodiode 0.5 RESPONSIVITY (A/W) ODD-45W/95W 0.4 0.3 Opto Diode's GaAlAs Opto Diode
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ODD-95W GaAlAs detector 650NM photodiode ODD-45W/95W
Abstract: HIGH-SENSITIVITY GaAlAs PHOTODIODE .006 MAX GLASS ABOVE CAP TOP EDGE .120 45 W .095 45 W ISOL.100 .085 ODD-45W/95W ODD-45W .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .187 .156 .181 .152 .215 .220 .012 MAX GLASS ABOVE CAP TOP EDGE CATHODE .500 MIN. ODD-95W .018 DIA. 3 PLCS. ON 200 DIA. PIN CIRCLE .324 .246 .332 .254 .100 .160 .145 .111 95 W , 0.6 SPECTRAL RESPONSE STANDARD SILICON PHOTODIODE 0.5 RESPONSIVITY (A/W) ODD-45W/95W Opto Diode
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357 opto IR photodiode 95w led and photodiode pair
Abstract: HIGH-SENSITIVITY GaAlAs PHOTODIODE .006 MAX GLASS ABOVE CAP TOP EDGE .120 45 W .095 45 W ISOL.100 .085 ODD-45W .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .187 .156 .181 .152 .215 .220 .012 MAX GLASS ABOVE CAP TOP EDGE CATHODE .500 MIN. .111 95 W .095 95 W , .100 .160 .145 ODD-45W/95W CASE LEAD ANODE ON NON ISOLATED VERSION CATHODE .200 , 0.6 SPECTRAL RESPONSE STANDARD SILICON PHOTODIODE 0.5 RESPONSIVITY (A/W) ODD-45W/95W Opto Diode
Original
IR-led 780 nm
Abstract: HIGH-SENSITIVITY GaAIAs PHOTODIODE .006 MAX GLASS ABOVE ODD-45W 45 W .012 MAX GLASS ABOVE E D G E °P ODD-45W/95W ODD-95W 95 W 95 W ISOL ED G E °P 45WISOL CATHODE CATHODE ANODE ANODE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS « . A Active Area Peak Sensitivity Responsivity at 880nm > > Responsivity at 750nm Responsivity at 650nm Spectral Bandwidth at 50% Dark Current , HIGH-SENSITIVITY GaAIAs PHOTODIODE SPECTRAL RESPONSE ODD-45W/95W Wavelength (nm) CAPACITANCE vs BIAS VOLTAGE -
OCR Scan
750nm
Abstract: HIGH-SENSITIVITY GaAIAs PHOTODIODE .006 MAX GLASS ABOVE ODD-45W 45 W .012 MAX GLASS ABOVE ODD-45W/95W ODD-95W 95 W ED G E °P 45W ISO L- CATHODE ED G E °P 95WISOL CATHODE ANODE ANODE ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS * *· Area * Active Peak Sensitivity Responsivity at 880nm Responsivity at 650nm Spectral Bandwidth at 50% Dark Current Shunt Resistance Response , HIGH-SENSITIVITY GaAIAs PHOTODIODE SPECTRAL RESPONSE ODD-45W/95W Wavelength (nm) CAPACITANCE vs BIAS VOLTAGE -
OCR Scan
Abstract: HIGH-SENSITIVITY GaAlAs PHOTODIODE .006 MAX GLASS ABOVE CAP TOP EDGE ODD-45W .120 45 W .095 45 W ISOL.100 .085 .012 MAX GLASS ABOVE CAP TOP EDGE .111 95 W .095 95 W ISOL.098 .078 ODD-45W/95W ODD-95W .018 , Photodiode Standard Silicon Photodiode ODD-45W/95W 100 RELATIVE CAPACITANCE (%) CAPACITANCE vs BIAS Opto Diode
Original
RG850 1071H MIL-STD-750
Abstract: HIGH-SENSITIVITY GaAlAs PHOTODIODE .006 MAX GLASS ABOVE CAP TOP EDGE ODD-45W .120 45 W .095 45 W ISOL.100 .085 .012 MAX GLASS ABOVE CAP TOP EDGE .111 95 W .095 95 W ISOL.098 .078 ODD-45W/95W ODD-95W .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE CATHODE .215 .210 .018 DIA. 3 PLCS. ON 200 DIA. PIN CIRCLE CATHODE .357 .362 .187 .156 .181 .152 .100 .324 .246 .332 .254 .200 .210 .160 , Wavelength (nm) 1000 1100 Opto Diode's GaAlAs Photodiode Standard Silicon Photodiode ODD-45W/95W 100 Opto Diode
Original
Abstract: HIGH-SENSITIVITY GaAlAs PHOTODIODE .006 MAX GLASS ABOVE CAP TOP EDGE .120 45 W .095 45 W ISOL.100 .085 ODD-45W .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .187 .156 .181 .152 CATHODE .500 MIN. .012 MAX GLASS ABOVE CAP TOP EDGE .111 95 W .095 95 W ISOL.098 .078 , .160 .145 ODD-45W/95W CASE LEAD ANODE ON NON ISOLATED VERSION CATHODE .200 .210 , /W) ODD-45W/95W 0.4 0.3 Opto Diode's GaAlAs Photodiode 0.2 0.1 0.0 RELATIVE Opto Diode
Original
Abstract: emission for optimum matching with ODD-45W photodiode · Wide range of linear power output .183 .152 , epitaxially grown GaAlAs .209 .212 .015 · 880nm peak emission for optimum matching with ODD-45W , epitaxially grown GaAlAs .209 .212 .015 · 880nm peak emission for optimum matching with ODD-45W , · 880nm peak emission for optimum matching with ODD-45W photodiode · Hermetically sealed TO Opto Diode
Original
OD-880W OD-24F OD-880L OD-880F1 OD-880F OD-880E OD-880
Abstract: HIGH-POWER GaAlAs IR EMITTERS GLASS DOME .183 .186 FEATURES â'¢ High reliability liquid-phase epitaxially grown GaAlAs â'¢ 880nm peak emission for optimum matching with ODD-45W photodiode â'¢ Wide range of linear power output â'¢ Hermetically sealed TO-46 package â'¢ Narrow angle for long distance applications ANODE (CASE) .209 .220 .015 .152 .154 .100 .041 20 .017 .030 .040 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise Opto Diode
Original
Abstract: HIGH-POWER GaAIAs IR EMITTERS FEATURES OD-880F · High reliability liquid-phase epitaxially grown GaAIAs · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output · Hermetically sealed TO-46 package · Narrow angle for long distance applications · OD'88C)F1 selected to meet minimum radiant intensity All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL -
OCR Scan
OD-88 880F1
Abstract: HIGH-POWER GaAIAs IR EMITTERS FEATURES OD-880W · High reliability liquid-phase epitaxially grown GaAIAs · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output · Hermetically sealed TO-46 package · Wide emission angle to cover a large area All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, P0 -
OCR Scan
Abstract: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .209 .212 OD-880F FEATURES · High reliability liquid-phase epitaxially grown GaAlAs · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output · Hermetically sealed TO-46 package .183 .186 .152 .154 .100 .041 .017 · Narrow angle for long distance applications · OD-880F1 selected to meet minimum radiant intensity .030 .040 CATHODE .197 .205 .036 45° All surfaces are Opto Diode
Original
Abstract: HIGH-POWER GaAlAs IR EMITTERS .183 .186 ANODE (CASE) .209 .220 .015 .152 .154 .100 .041 .017 .030 .040 CATHODE All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. .036 45° .197 .205 R GLASS DOME FEATURES â'¢ High reliability liquid-phase epitaxially grown GaAlAs â'¢ 880nm peak emission for optimum matching with ODD-45W photodiode â'¢ Wide range of linear power output Opto Diode
Original
Abstract: HIGH-POWER GaAIAs IR EMITTERS FEATURES · High current capability OD-24F · 880nm peak emission for optimum matching with ODD-45W photodiode · Hermetically sealed TO-46 package · Narrow angle of emission All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, P0 Radiant Intensity, le Peak Emission Wavelength, Spectral Bandwidth at 50%, Half Intensity Beam -
OCR Scan
Abstract: HIGH-POWER GaAIAs IR EMITTERS FEATURES OD-880L · High reliability liquid-phase epitaxially grown GaAIAs · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output · Hermetically sealed TO-46 package · Medium emission angle for best coverage/power density All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power -
OCR Scan
Abstract: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME .183 .186 ANODE (CASE) .015 .152 .154 FEATURES · High reliability liquid-phase epitaxially grown GaAlAs · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output · Hermetically sealed TO-46 package · Narrow angle for long distance applications · OD-880F1 selected to meet minimum radiant intensity .209 .220 .100 .041 .017 .030 .040 .197 .205 CATHODE OD Opto Diode
Original
OD880F1 880-F
Abstract: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE (CASE) .015 · High reliability liquid-phase epitaxially grown GaAlAs .209 .212 · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output .183 .152 .186 .156 · Hermetically sealed TO-46 package .100 .041 .017 .024 .043 .143 .150 CATHODE · Medium emission angle for best coverage/power density All surfaces are gold plated. Dimensions Opto Diode
Original
Abstract: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 OD-880W FEATURES 1.00 MIN. ANODE (CASE) · High reliability liquid-phase epitaxially grown GaAlAs .209 .220 · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output .183 .152 .187 .156 · Hermetically sealed TO-46 package .100 .041 .017 .098 .112 .143 .150 CATHODE · Wide emission angle to cover a large area All surfaces are gold plated. Dimensions are Opto Diode
Original
Abstract: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME ANODE (CASE) .015 .183 .152 .186 .156 FEATURES · High reliability liquid-phase epitaxially grown GaAlAs · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output · Hermetically sealed TO-46 package · Medium emission angle for best coverage/power density .209 .220 .100 .041 .017 .024 .043 .143 .150 CATHODE OD-880L .036 All surfaces are gold plated Opto Diode
Original
Abstract: liquid-phase epitaxially grown GaAlAs · 880nm peak emission for optimum matching with ODD-45W photodiode · , peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output · , epitaxially grown GaAlAs · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of Opto Diode
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ODD-660W nir emitter leds with 700 to 900 nm ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030
Abstract: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880L ANODE (CASE) .015 · High reliability liquid-phase epitaxially grown GaAlAs .209 .220 · 880nm peak emission for optimum matching with ODD-45W photodiode · Wide range of linear power output .183 .152 .186 .156 · Hermetically sealed TO-46 package .100 .041 .017 .024 .043 .143 .150 CATHODE · Medium emission angle for best coverage/power density All surfaces are gold plated. Dimensions Opto Diode
Original
Abstract: HIGH-POWER GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME .183 .186 OD-24F ANODE (CASE) .015 · High current capability .209 .220 · 880nm peak emission for optimum matching with ODD-45W photodiode · Hermetically sealed TO-46 package .152 .154 · Narrow angle of emission .100 .041 .017 .030 .040 .197 .205 CATHODE .036 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case Opto Diode
Original
350T IR photodiode 880 nm
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