ODD-12WB - Datasheet Archive

 

ODD-12WB FEATURES · TO-8 hermetic package · Circular active area · Low capacitance RoHS ELECTRO-OPTICAL

 

PHOTODIODE: 12mm2 ODD-12WB ODD-12WB FEATURES · TO-8 hermetic package · Circular active area · Low capacitance RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time Series Resistance THERMAL PARAMETERS TEST CONDITIONS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 1 4mm DIA. @ 632nm VR = 10V IR = 10A VR = 10V VR = 10V Vf = 1V MIN 0.35 25 TYP 12 0.40 3 60 25 15 35 MAX 7 100 UNITS mm2 A/W nA Volts pF nsec Ohms -55°C TO 100°C 100°C 260° 1/16" from case for 10 seconds. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com PHOTODIODE: 12mm2 ODD-12WB ODD-12WB CAPACITANCE vs BIAS VOLTAGE 1 RELATIVE CAPACITANCE 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 12 14 8 10 BIAS VOLTAGE (V) 16 18 20 TYPICAL SPECTRAL RESPONSE 0.7 0.6 RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com