TGA4803 OC-768 OC768 3000C - Datasheet Archive

 

October 3, 2006 DC to >50GHz MPA with AGC TGA4803 OC-768 43Gb/s NRZ Electro-Absorptive Modulator Driver Key Features and

 

Advance Product Information October 3, 2006 DC to >50GHz MPA with AGC TGA4803 TGA4803 OC-768 OC-768 43Gb/s NRZ Electro-Absorptive Modulator Driver Key Features and Performance · · · · 0.15um pHEMT Technology DC to >50GHz Linear BW 8dB Gain, 14dBm @ P1dB Group Delay Ripple +/- 6ps to 50 GHz · 10dB. Typical Noise Figure is 5dB at 3GHz. Typical saturated output power is 17dBm. Small signal 3dB BW is >50GHz. RF ports are DC coupled enabling the user to customize system corner frequencies. · 43Gb/s OC768 OC768 EAM Driver Drain bias may be applied through the output port for best efficiency or through the on-chip drain termination. Three stages in cascade demonstrated 3.8Vpp output voltage swing with 350mV at the input when stimulated with 43Gb/s 2^31-1prbs NRZ data. 43Gb/s OC768 OC768 Gain Stage: 15 10 S-parameter (dB) The TGA4803 TGA4803 is an excellent choice for 43Gb/s NRZ applications. The TGA4803 TGA4803 is capable of driving a single Electro-Absorptive optical Modulator (EAM) with electrical Non-Return to Zero (NRZ) data. In addition, the TGA4803 TGA4803 may also be used as a transmit predriver or a receive gain block. · 5 S11 0 S22 -5 S21 -10 -15 -20 -25 -30 0 10 20 30 40 50 60 70 80 Frequency (GHz) Measured Performance 40Gb/s NRZ 2^31-1 PRBS Single Stage 40 Gb/s Data Eye: 3.7V(amp) * The TGA4803 TGA4803 requires off-chip decoupling and blocking components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in die form. Lead-free and RoHS compliant * Input 40Gb/s data stream generated using an Anritsu MUX. Vin=1.8Vpp. Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 3, 2006 TGA4803 TGA4803 MAXIMUM RATINGS 7/ SYMBOL PARAMETER 6/ VALUE NOTES Biased thru On-chip Drain Termination 10 V 1/ Biased thru the RF Output Port using a Bias Tee 8V POSITIVE SUPPLY VOLTAGE + V Vd(fet) POSITIVE SUPPLY CURRENT I + Id PD 1/ Biased thru On-chip Drain Termination 125 mA Biased thru the RF Output Port using a Bias Tee 125 mA POWER DISSIPATION 1.5 W 2/ NEGATIVE GATE Vg Voltage Ig Gate Current +1V to -3V 5 mA CONTROL GATE Vctl Voltage Ictl Gate Current Vd/2 to -3V 3/ 5 mA RF INPUT PIN Sinusoidal Continuous Wave Power Vin 43Gb/s PRBS Input Voltage Peak to Peak 4 Vpp TCH OPERATING CHANNEL TEMPERATURE 117 0C TM TSTG MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE 18 dBm 4/ 5/ 0 320 C -65 to 117 0C Notes: 1/ 2/ 3/ 4/ Assure Vd - Vctl 50 GHz SMALL-SIGNAL GAIN MAGNITUDE 2.5GHz 8 dB AGC RANGE Midband 3 dB 6 GHz 2.5 dB SATURATED OUTPUT VOLTAGE (EYE AMPLITUDE) 43Gb/s with Vin=2Vpp 3.5 V 1/ P1dB DC-20GHz TBD dBm 1/ INPUT RETURN LOSS MAGNITUDE DC-50GHz -10 dB 1/ OUTPUT RETURN LOSS MAGNITUDE DC-50GHz -10 dB GROUP DELAY DC-50GHz +/- 20 ps 20/80% 10 ps 1/ NOISE FIGURE RISE TIME Notes: 1/ Verified at RF on-wafer probe. THERMAL INFORMATION Parameter Test Condition RJC Thermal Resistance (channel to backside of carrier) Vd = 6V, Vctrl = 3 V, ID = 100mA TCH (°C) ° 109 RJC (°C/W) ° 65 MTTF (HRS) >1E6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 3, 2006 TGA4803 TGA4803 Measured Performance Bias Conditions: Vd = 10 V, Idq = 82 mA, Vg2=3-3.2V @ Room Temperature 15 S-parameter (dB) 10 5 S11 0 S22 -5 S21 -10 -15 -20 -25 -30 0 10 20 30 40 50 60 70 80 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 3, 2006 TGA4803 TGA4803 Mechanical Drawing 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 3, 2006 TGA4803 TGA4803 1800pF 0.1uF (2pl) V+ 0.01uF 3 Vctl 2 Vtee RFout and Vd RF in TGA4803 TGA4803 1 4 Note: Drain bias should be applied at Vd (pin 5) thru broadband bias tee for best efficiency. 5 Bypass caps must remain on Pin 4 1800pF 0.1uF (2pl) Vg Bias Procedure A. For applying drain bias thru Vd 1. Make sure no RF power is applied to the device before continuing. 2. Set Vg=0 Set Vctl=0. 3. Raise Vd to 6V while monitoring drain current. Id should be near 20mA. 4. Raise Vctl to +2.5V (no greater than 3.5V). 5. Adjust Vg more positive until drain current reaches 100mA. 6. Apply Vin=1.8V(amplitude) NRZ 40Gb/s B. For applying drain bias thru V+ 1. Make sure no RF power is applied to the device before continuing. 2. Set Vg=0 Set Vctl=0. 3. Raise V+ to 5V while monitoring drain current. I+ should be near 20mA. 4. Raise Vctl to 2.5V (no greater than 3.5V) 5. Raise Vg more positive until drain current is 80mA 6. Raise V+ to 8V 7. Adjust Vg for Id=100mA 8. Apply Vin=1.8V(amplitude) NRZ 40Gb/s CAUTION: 1. Assure Vd - Vctl < 6V. When biasing thru V+, compute Vd as follows, Vd=V+ - Id*30. 2. Assure Vctl never exceeds Vd during bias up and down sequences. Also, assure Vctl never exceeds 4V during normal operation. 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 3, 2006 Recommend additional 0.01uF bypass cap located on Vctrl supply line on test fixture TGA4803 TGA4803 0.01uF Reflow process assembly notes: · · · · · AuSn (80/20) solder with limited exposure to temperatures at or above 300 C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: · · · · · · · vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: · · · · · thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 3, 2006 TGA4803 TGA4803 Assembly Process Notes Reflow process assembly notes: · · · · · Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C 3000C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: · · · · · · · Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: · · · · Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com