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Note34

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Abstract: ) Specification Technical Note-34 The DPI strobe signal (CLK) is driven by the receiver to the transmitter. , Interface (DPI) Specification Technical Note-34 The previous two examples illustrate cases in which , Control 3 Data Path Interface (DPI) Specification Technical Note-34 Receiver Behavior FRM , Technical Note-34 Bit 87654321 0 Octet 1 2 3 MSb 7 8 6 7 GFC VPI 5 6 VPI VCI VCI , Technical Note-34 Physical Layer Profile B - Timing DPI specification defines a simple bus protocol ... Original
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6 pages,
84.13 Kb

IDT77V500 IDT77V400 TN-34 DPI-16 DPI-32 DPI-4/8/16/32 TN-34 abstract
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Abstract: ) RTH(J-L) PDsingle (Note.3&4) TJ, Tstg 1. Surface Mounted on FR4 Board using 1in square pad size ... Original
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9 pages,
421.99 Kb

mosfet 400 V 10A BJT pnp 45V bjt 50a BJT IC Vce Logic Level Gate Drive mosfet SUM201MN SUM201MN abstract
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Abstract: Storage Temperature Range (Note.3&4) TJ, Tstg 1. Surface Mounted on FR4 Board using 1in square ... Original
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9 pages,
372.36 Kb

Low Capacitance bjt Drive Base BJT BJT pnp 45V BJT IC Vce 5v power BJT PNP SUM202MN SUM202 BJT IC Vce Logic Level Gate Drive mosfet 12V 10A BJT SUM202MN abstract
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Abstract: nS nS uS Remark Note33 Note34 Note35 Note36 Note37 Note38 Note39 Note40 Note41 Note42 , are the same as described in Note31 .except SG3 to 180MHz. Note34) Relative characteristics & FC1' is ... OCR Scan
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26 pages,
5597.97 Kb

OSD ic M52749FP datasheet abstract
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Abstract: sg3a SG1A 1 (f=200MHz) Afcv - - - - - - - -1.0 0 1.0 dB Note34 35 Frequency , 150MHz. Note34) Relative characteristics AFC1' is calculated by the difference in the output between the ... OCR Scan
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25 pages,
1624.68 Kb

M61301SP FC120 CT1-20 NOTE29 crt monitor block diagram crt monitor circuit diagram M61301SP abstract
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Abstract: Note35 Note34 Note33 Remark MITSUBISHI< LINEAR IC > M52749FP M52749FP BUS CONTROLLED 3CH VIDEO , Note34) Relative characteristics FC1' is calculated by the difference in the output between the ... Original
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25 pages,
182.19 Kb

SW11 MARK A03 M52749FP A64 monolithic amplifier crt monitor block diagram crt monitor circuit diagram M52749FP abstract
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Abstract: 17A19 amplitude and make Dg-y the testing value. b. G/B = db - y Note34. Demodulated Output 1H Level Difference , OV 6V - OFF OFF OFF OFF 2 Vcc Note34 35 mVp-p Cleak Demodulated output carrier leak 1A 2A 3A ... OCR Scan
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14 pages,
1008.44 Kb

S24I M51390 m51412 NOTES PAL 007 A m51412sp M51346 M51390ASP m51346ap M51308SP M51346AP M51390ASP abstract
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Abstract: Note35 Note34 Note33 Remark OSD adjust control characteristics 2 OSD adjust control , described in Note31,expect SG3 to 150MHz. Note34) Relative characteristics FC1' is calculated by the ... Original
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25 pages,
403.41 Kb

mitsubishi osd MARK A03 M61301SP crt monitor circuit diagram crt monitor block diagram M61301SP abstract
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Abstract: Note42 Note41 Note40 Note39 Note38 Note37 Note36 Note35 Note34 Note33 , ,expect SG3 to 200MHz. Note34) Relative characteristics FC1' is calculated by the difference in the ... Original
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25 pages,
311.74 Kb

M52746SP DAC-IC crt monitor circuit diagram crt monitor block diagram M52746SP abstract
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Abstract: from keeping generating the high voltage when the lamps open.(Refer Note.3-4.) With lamp failure , : Brightness max. Note3-3.Test Equipments Note3-4.Safety Function V Digital Multiple Meter(ADVA ... Original
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9 pages,
173.67 Kb

wire diagram dc-ac inverter cn160 cxa inverter tdk P3000 P3000 equivalent R6451A SM02 TDK inverter tdk lcd inverter BHR-03VS-1 tdk inverter lamps TDK transformer ST china model inverter circuit diagram CXA-0454 CXA-0454 abstract
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Abstract: REV A New Rei DATE 10/24/05 ECO 5799 2,00 1,05 SEE NOTE 3 4,00 SEE 12,0 ±,3 Aa = 5,32 Bo = 3,30 Ko = 1,42 - Si TOLERANCE +0,2 NOTES: 1, 10 SPROCKET HOLE PITCO 2, CAMBER IN COMPLIANCE KITH EIA 481 3, POCKET POSITION RPLATIVP TO SPROCKET AS TROE POSITION OF POEKET, NOT POCKET HOLE mtcnoncviccs TITCE MSDP8 Tape and Reel Dwg TOLERANCES - 1PL 1,2 2PL 1,10 MATERIAL PS+C ALL I MILLIMETERS | DWG SIZE 0 SCALE id I SHEET 1 OF NO, MEM104927 MEM104927 REV A ... OCR Scan
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1 pages,
83.63 Kb

EIA-481-3 datasheet abstract
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Abstract: MITSUBISHI (OPTICAL DEVICES) FU-653SEA-1Mx 1.55 祄 EA MODULATOR INTEGLATED DFB-LD MODULE (7 PIN PACKAGE WITH GPO CONNECTOR, 10GB/s DIGITAL APPLICATION) DESCRIPTION Module type FU-653SEA-1Mx is a 1.55祄 EA modulator integrated DFB-LD module with singlemode optical fiber. This module is suitable to a light source for use in 10Gb/s digital optical communication systems. FEATURES l Input impedance is 50 l Integrated Electro-absorption Modulator l Distributed feed-back(DFB) Laser Dio ... Original
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4 pages,
52.88 Kb

STM-64 FU-653SEA-1M1 FU-653SEA-1M3 FU-653SEA-1M4 FU-653SEA-V1M1 FU-653SEA-V1M2 FU-653SEA-V1M3 FU-653SEA-V1M4 OC192 pin Photodiode 1550 nm 10GHZ stm 64 laser diode 1550 nm DFB ea 10GHZ FU-653SEA-1M2 datasheet abstract
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Abstract: SMN0665FD SMN0665FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features · Drain-Source breakdown voltage: BVDSS=650V (Min.) · Low gate charge: Qg=14nC (Typ.) · Low drain-source On resistance: RDS(on)=1.8 · 100% avalanche tested · RoHS compliant device Ordering Information Part Number SMN0665FD SMN0665FD Marking SMN0665 SMN0665 Package TO-220F-3L GDS TO-220F-3L Marking Information Column 1: Manufacturer Column 2: Production Information e.g.) GFYMDD -. G: Option Code (H: Halogen Free) -. F: F ... Original
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8 pages,
420.17 Kb

SMN0665 SMN0665FD SMN0665FD abstract
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Abstract: TZ7-01-192B TZ7-01-192B (1/5) Aug 16, 2001 Preliminary APPROVED APPROVED APPROVED A.Adachi T.Onodera Preliminary specification of 10Gb/s EML module Type No.=FU-641SEA-1M5 FU-641SEA-1M5 (Dispersion=1200ps/nm) Type No.=FU-641SEA-1M6 FU-641SEA-1M6 (Dispersion=1600ps/nm) A B x DATE 18,Aug.'01 MITSUBISHI ELECTRIC CORPORATION C D Approved T.Nambara TZ7-01-192B TZ7-01-192B (2/5) FEATURES Input impedance is 50 Integrated Electro-absorption Modulator Distributed feed-back(DFB) Laser Diode Emissi ... Original
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5 pages,
41.63 Kb

thermo electrical cooler module pin Photodiode 1550 nm 10GHZ FU-641SEA-W1M6 FU-641SEA-W1M5 FU-641SEA-V1M6 FU-641SEA-V1M5 FU-641SEA-1M6 FU-641SEA-1M5 EAM LD TZ7-01-192B TZ7-01-192B abstract
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Abstract: TZ7-01-385 TZ7-01-385 (1/5) Nov. 15, 2001 Preliminary APPROVED APPROVED APPROVED A.Adachi T.Onodera Preliminary specification of 10Gb/s EML module Type No.=FU-653SEA-1M5 FU-653SEA-1M5 (Dispersion=1200ps/nm) Type No.=FU-653SEA-1M6 FU-653SEA-1M6 (Dispersion=1600ps/nm) A B x DATE 20.Nov. '01 MITSUBISHI ELECTRIC CORPORATION C D Approved T.Nambara TZ7-01-385 TZ7-01-385 (2/5) FEATURES Input impedance is 50 Integrated Electro-absorption Modulator Distributed feed-back(DFB) Laser Diode Emissi ... Original
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5 pages,
74.72 Kb

pin Photodiode 1550 nm 10GHZ EAM laser eml dfb laser diode 1550 FU-653SEA-1M5 FU-653SEA-1M6 FU-653SEA-V1M5 FU-653SEA-V1M6 FU-653SEA-W1M5 FU-653SEA-W1M6 10ghz optical modulator TZ7-01-385 TZ7-01-385 abstract
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Abstract: 2N7000K 2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on) < 3 @ VGS = 10V High power and current handling capability Very fast switching Halogen free and RoHS compliant device SGD Applications High speed line driver TO-92 Ordering Information Part Number Marking Code Package Packaging 2N7000K 2N7000K 2N7000K 2N7000K TO-92 Tape Marking Information 2N 7000K 7000K YWW Column 1,2 : Device Code Column 3 : P ... Original
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6 pages,
202.71 Kb

2n7000k 2N7000K 2N7000K abstract
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Abstract: SN NN01Z NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures · Logic level l gate drive e · Max. RDS(ON N) = 0.24 at VGS = 10V, ID = 0.5A · Low RDS(on) provides hi igher efficie ency · ESD protec cted: 2000V V (HBM: ±10 000V) · Halogen fr ree and RoH HS complian nt device D G Package SOT-223 Or rdering In nformatio on Part Num mber SNN01Z SNN01Z Z10Q Marking g SNN01Z10 SNN01Z10 0Q D S SOT-223 arking Inf formation n Ma Column 1: 1 Device C ... Original
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8 pages,
599.81 Kb

NN01Z NN01Z abstract
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Abstract: SN NN01Z NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures · Logic level l gate drive e · Max. RDS(ON a VGS = 10V V, ID = 0.5A N) = 135m at · Low RDS(on) provides hi igher efficie ency · ESD protec cted: 1000V V (HBM ±500 0V) · Halogen fr ree and RoH HS complian nt device D G Package SOT-223 Or rdering In nformatio on Part Num mber SNN01Z SNN01Z Z60Q Marking g SNN01Z6 SNN01Z6 60 D S SOT-223 arking Inf formation n Ma Column 1: 1 Device ... Original
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8 pages,
600.56 Kb

NN01Z NN01Z abstract
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Abstract: SMNY2Z30 SMNY2Z30 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features High voltage: BVDDS=300V (Min.) Low gate charge: Qg=2.9nC (Typ.) Low drain-source On resistance: RDS(on)=8 (Max.) Built-in protection zener diode RoHS compliant device Ordering Information GDS Part Number Marking Package SMNY2Z30 SMNY2Z30 SMNY2Z30 SMNY2Z30 TO-92 TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code ... Original
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8 pages,
347.05 Kb

smny2z30 2Z30 SMNY2Z30 SMNY2Z30 abstract
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Abstract: SMK1360FD SMK1360FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BVDDS=600V (Min.) Low gate charge: Qg=41nC (Typ.) Low drain-source On resistance: RDS(on)=0.65 (Max.) 100% avalanche tested RoHS compliant device Ordering Information Part Number Marking Package SMK1360FD SMK1360FD SMK1360 SMK1360 TO-220F-3L GDS TO-220F-3L Marking Information Column 1: Manufacturer Column 2: Production Information e.g.) GFYMDD -. G: Option Code (H: Halogen Free) -. F: Fact ... Original
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8 pages,
342.83 Kb

TO-220F-3L smk1360fd Smk1360 SMK1360FD SMK1360FD abstract
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