NX8564/ NX8565/ NX8566LE NX8564/8565/8566LE NX8564LE-BC/CC NX8565LE-BC/CC

INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8565/

NEC'S EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564/ NX8564/ NX8565/ NX8565/ NX8566LE NX8566LE Series FEATURES DESCRIPTION · INTEGRATED ELECTROABSORPTION MODULATOR NEC's NX8564/8565/8566LE NX8564/8565/8566LE Series are Electro-Absorption (EA) modulator integrated, 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diodes. The module is capable of 2.5 Gb/s applications of over 360, 600, 240 km ultralong-reach and available for Dense Wavelength Division Multoplexing (DWDM) wavelenghts based on ITU-T recommendations, enabling a wide range of applications. · VERY LOW DISPERSION PENALTY NX8564LE-BC/CC NX8564LE-BC/CC - over 360 km (6480 ps/nm) NX8565LE-BC/CC NX8565LE-BC/CC - over 600 km (10800 ps/nm) NX8566LE-BC/CC NX8566LE-BC/CC - over 240 km (4320 ps/nm) · LOW MODULATION VOLTAGE · AVAILABLE FOR DWDM WAVELENGHT BASED ON ITU-T RECOMMENDATION (100 GHz grid, refer to ordering information) ELECTRO-OPTICAL CHARACTERISTICS (TLD = Tset, TC = -20 to +70°C, unless otherwise speciÞed) PART NUMBER SYMBOLS TSET PARAMETERS AND CONDITIONS UNITS MIN TYP MAX Vcenter °C Vmod Modulation VFLD ITH Threshold Current -1.5 -1.2 -0.5 2 3 1.6 2.0 mA Forward Voltage of LD, IFLD = IOP 100 V Voltage2 60 V Modulation Center Voltage2 50 V Operating Current 20 mA 7 20 -5 -2 0 1 1530 IOP Laser Set Temperature1 NX8564/8565/8566LE NX8564/8565/8566LE SERIES SpeciÞed to ITU-T3 1563 IFLD = IOP, Under modulation2 Pf Optical Output Power from Fiber, (NX8564/65LE NX8564/65LE Series) IFLD = IOP, Under modulation2 dBm (NX8566LE NX8566LE Series) P Peak Emission Wavelength, IFLD = IOP, VEA = 0 V nm Side Mode Suppression Ratio, IFLD = IOP, VEA = 0 V dB 30 >37 1574 SMSR ER 35 Extinction Ratio, IFLD = IOP, Under modulation2 1609 dB 10 >11 tf Rise Time, IFLD = IOP, 20-80%, Under modulation2 ps 70 125 tr Rise Time, IFLD = IOP, 80-20%, Under modulation2 ps 70 125 Notes: 1. NX8564/65/66LE NX8564/65/66LE Series : Tset is a certain point between 20 and 35°C NX8564/65/66LExxx Series : Tset is a certain point between 20 and 35C for ITU-T grid wavelength 2. NX8564LE NX8564LE: C-band 360 km, L-band 288 km (6480 ps/nm) SMF under modulation NX8564LE NX8564LE: C-band 360 km, L-band 288 km (6480 ps/nm) SMF under modulation NX8564LE NX8564LE: C-band 360 km, L-band 288 km (6480 ps/nm) SMF under modulation 2.48832 Gb/s, PRBS 223 -1, VEA = Vcenter ±1/2 Vmod, IFLD = Iop, TLD = Tset, NEC Test System Vcenter : a certain point between -1.5 and -0.5 V Vmod : a certain point 3 V or below Iop : a certain point between 50 and 80 mA 3. Available for DWDM wavelenght based on ITU-T recommendation (100 GHz grid). Please refer to ORDERING INFORMATION. California Eastern Laboratories NX8564/8565/8566LE NX8564/8565/8566LE SERIES ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +70°C) PART NUMBER SYMBOLS NX8564/8565/8566LE NX8564/8565/8566LE SERIES PARAMETERS AND CONDITIONS UNITS modulation2,4 DP Dispension Penalty, IFLD = IOP, SMF Under IS Isolation Relative Intensity Noise10 MHz to 10 GHz, VRM = 0 V, TLD, IOP S11 Input Return Loss MAX 2