NX6311EH PL10631EJ02V0DS NX6311EH-AZ PX10160E 2002/95/EC 2003/11/EC - Datasheet Archive
NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm
LASER DIODE NX6311EH NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH NX6311EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION · 4 G fiber channel FEATURES · Optical output power Po = 7.0 mW · Low threshold current lth = 8 mA · Differential efficiency d = 0.40 W/A · Wide operating temperature range TC = -30 to +85°C · InGaAs monitor PIN-PD · CAN package 5.6 mm · Focal point 5.8 mm Document No. PL10631EJ02V0DS PL10631EJ02V0DS (2nd edition) Date Published December 2006 NS CP(N) The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2006 NX6311EH NX6311EH PACKAGE DIMENSIONS (UNIT: mm) 5.6+0.00 0.03 *2 ( 4.2) *2 1.0±0.1 BOTTOM VIEW 1 (0.3) 110°±2° *2 ( 3.55) 2 4 3 *2 (0.3) *1 Focal Point x = ±300 µ m MAX. y = ±300 µ m MAX. 5.80±0.5 2.97±0.2 15.0±1.0 1.2±0.1 3.87±0.3 2.0 PIN CONNECTIONS LD 4 2 4 0.45 PD 3 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. 2 1 (Case) Reference Plane Data Sheet PL10631EJ02V0DS PL10631EJ02V0DS NX6311EH NX6311EH ORDERING INFORMATION Part Number NX6311EH-AZ NX6311EH-AZ* Package Pin Connections 1 4-pin CAN with ball lens cap LD 4 2 PD 3 *Note Please refer to the last page of this data sheet "Compliance with EU Directives" for Pb-Free RoHs Compliance Information. Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 15 mW Forward Current of LD IF 120 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC -30 to +85 °C Storage Temperature Tstg -40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % RECOMMENDED OPERATING CONDITION Parameter Symbol Bias Current Ibias Conditions TC = 25°C, refer to below MIN. TYP. Ith +20 MAX. Unit mA Pf (mW) Ex = 10 log P1 [dB] P0 P1 P0 Imod IF 0 Ibias (mA) Data Sheet PL10631EJ02V0DS PL10631EJ02V0DS 3 NX6311EH NX6311EH ELECTRO-OPTICAL CHARACTERISTICS (TC = -30 to +85°C, unless otherwise specified) Parameter Operating Voltage Symbol Vop Conditions MIN. MAX. Unit 1.3 CW, Po = 7.0 mW, TC = +25°C TYP. 1.6 V CW, Po = 7.0 mW Threshold Current Ith CW, TC = +25°C CW Differential Efficiency d 2.0 8 2 20 mA 40 p Temperature Dependence of Slope Efficiency 0.25 CW Peak Emission Wavelength CW, TC = +25°C 0.12 0.65 Po = 7.0 mW, RMS (-20 dB) 1 290 1 330 nm -3.0 1.5 dB = 10 log d (@ 85°C) 0.40 0.50 W/A d (@ 25°C) Spectral Width Po = 7.0 mW, RMS (-20 dB) 1 nm Rise Time tr 20-80% 90 ps Fall Time tf 80-20% 90 ps Side Mode Suppression Ratio Relative Intensity Noise SMSR CW, Po = 7.0 mW RIN CW, Po = 7.0 mW Monitor Current Im VR = 1.5 V, Po = 7.0 mW Monitor Dark Current ID Ct VR = 5 V, f = 1 MHz dB -120 4 Data Sheet PL10631EJ02V0DS PL10631EJ02V0DS 6 µA 500 200 dB/Hz 2 000 VR = 5 V Monitor PD Terminal Capacitance 35 nA 20 pF NX6311EH NX6311EH TYPICAL CHARACTERISTICS (TC = -30 to +85°C, unless otherwise specified) OPERATING CURRENT AND THRESHOLD CURRENT vs. CASE TEMPERATURE OPTICAL OUTPUT POWER vs. FORWARD CURRENT 100 +25°C TC = 30°C +85°C 5 10 0 20 30 40 50 60 Operating Current Iop (mA), Threshold Current Ith (mA) Optical Output Power Po (mW) 10 50 Iop Ith 10 5 1 40 20 0 20 40 60 80 100 Case Temperature TC (°C) Forward Current IF (mA) TEMPERATURE DEPENDENCE OF PEAK EMISSION WAVELENGTH Peak Emission Wavelength P (nm) 1 350 1 340 1 330 1 320 1 310 1 300 1 290 1 280 1 270 40 20 0 20 40 60 80 100 Case Temperature TC (°C) Remark The graphs indicate nominal characteristics. Data Sheet PL10631EJ02V0DS PL10631EJ02V0DS 5 NX6311EH NX6311EH TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) FORWARD CURRENT vs. FORWARD VOLTAGE OPTICAL OUTPUT POWER vs. MONITOR CURRENT 10 Optical Output Power Po (mW) Forward Current IF (mA) 50 40 30 20 10 0 1 2 5 0 SPECTRUM 10 Relative Intensity (dB) 0 10 20 30 40 50 60 1 280 1 290 1 300 1 310 1 320 1 330 Wavelength (nm) Remark The graphs indicate nominal characteristics. 6 600 900 1 200 Monitor Current Im (µA) Forward Voltage VF (V) 300 Data Sheet PL10631EJ02V0DS PL10631EJ02V0DS 1 500 NX6311EH NX6311EH REFERENCE Document Name *1 Opto-Electronics Devices Pamphlet Document No. PX10160E PX10160E *1 Published by the former NEC Compound Semiconductor Devices, Ltd. Data Sheet PL10631EJ02V0DS PL10631EJ02V0DS 7 NX6311EH NX6311EH · The information in this document is current as of December, 2006. The information is subject to change without notice. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 8 Data Sheet PL10631EJ02V0DS PL10631EJ02V0DS NX6311EH NX6311EH SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. · Do not look directly into the laser beam. · Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. · Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. · Do not burn, destroy, cut, crush, or chemically dissolve the product. · Do not lick the product or in any way allow it to enter the mouth. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM -AZ (*) Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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