NX5530SA PL10700EJ01V0DS PX10160E - Datasheet Archive
LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple
DATA SHEET LASER DIODE NX5530SA NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA NX5530SA is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain Reflectometer (OTDR). FEATURES · High output power PO = 250 mW @ IFP = 1 000 mA*1 · Long wavelength C = 1 550 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PL10700EJ01V0DS PL10700EJ01V0DS (1st edition) Date Published January 2008 NS Printed in Japan 2008 NX5530SA NX5530SA PACKAGE DIMENSION (UNIT: mm) 5.6 +0.00 0.03 4.2±0.1 3.55±0.05 1.0±0.1 BOTTOM VIEW 110°±2° 0.3 +0.1 0.0 1 2 4 3 *1 0.33 0.25 1.0 MIN. PIN CONNECTION 1 (CASE) LD 2 LD CHIP 3 4 0.45 2.0 P.C.D. *1 n = 1.48 Bolosilicate Glass 2 4 REFERENCE PLANE 1.27±0.05 15.0±1.0 1.2±0.1 2.1±0.15 1.6±0.1 0.25±0.03 (GLASS) 0.3 +0.1 0.0 Data Sheet PL10700EJ01V0DS PL10700EJ01V0DS NX5530SA NX5530SA ORDERING INFORMATION Part Number Package NX5530SA NX5530SA 4-pin CAN with flat glass cap ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Pulsed Forward Current IFP 1.2 A Reverse Voltage VR 2.0 V Operating Case Temperature TC -20 to +60 °C Storage Temperature Tstg -40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % *1 *1 Pulse Condition: Pulse Width (PW) = 10 s, Duty = 1% ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C) Parameter Forward Voltage Symbol VFP Conditions MIN. MAX. Unit 2.5 4.0 V 35 IFP = 1 000 mA, TYP. 60 mA PW = 10 s, Duty = 1% Threshold Current Ith Optical Output Power PO IFP = 1 000 mA, 100 250 mW 1 530 1 550 1 570 nm 7.5 10.0 nm PW = 10 s, Duty = 1% Center Wavelength C RMS (-20 dB), IFP = 1 000 mA, PW = 10 s, Duty = 1% Spectral Width RMS (-20 dB), IFP = 1 000 mA, PW = 10 s, Duty = 1% Data Sheet PL10700EJ01V0DS PL10700EJ01V0DS 3 NX5530SA NX5530SA REFERENCE Document Name Opto-Electronics Devices Pamphlet 4 Document No. PX10160E PX10160E Data Sheet PL10700EJ01V0DS PL10700EJ01V0DS NX5530SA NX5530SA · The information in this document is current as of January, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. · No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. · NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. · Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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M8E 02. 11-1 Data Sheet PL10700EJ01V0DS PL10700EJ01V0DS 5 NX5530SA NX5530SA SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. · Do not look directly into the laser beam. · Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. · Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. · Do not burn, destroy, cut, crush, or chemically dissolve the product. · Do not lick the product or in any way allow it to enter the mouth. Caution Optical Fiber A glass-fiber is attached on the product. Handle with care. · When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part or fragments.