NTMFS4837N 4837N 488AA NTMFS4837NT1G NTMFS4837NT3G BRD8011/D NTMFS4837N/D

Power MOSFET 30 V, 74 A, Single N-Channel, SO-8 FL Features · · · · Low RDS(on) to Minimize

NTMFS4837N NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8 FL Features · · · · Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS Applications · CPU Power Delivery · DC-DC Converters · Low Side Switching RDS(ON) MAX ID MAX 5.0 mW @ 10 V 30 V 74 A 7.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) D (5,6) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 16 A Parameter Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.2 W Continuous Drain Current RqJA (Note 2) TA = 25°C ID 10 G (4) A Power Dissipation RqJA (Note 2) TA = 85°C Steady State 11.5 TA = 85°C TA = 25°C S (1,2,3) N-CHANNEL MOSFET MARKING DIAGRAM 7 PD W Continuous Drain Current RqJC (Note 1) TC = 25°C Power Dissipation RqJC (Note 1) TC = 25°C PD 47.2 W TA = 25°C IDM 148 A TJ, TSTG -55 to +150 °C IS 39 Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, VGS = 10 V, IL = 22 Apk, L = 1.0 mH, RG = 25 W) EAS 242 mJ Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL D TC = 85°C tp=10ms Operating Junction and Storage Temperature Source Current (Body Diode) A S S S G 4837N 4837N AYWWG G D A Pulsed Drain Current ID 0.88 74 53 1 SO-8 FLAT LEAD CASE 488AA 488AA STYLE 1 A Y WW G D D = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NTMFS4837NT1G NTMFS4837NT1G SO-8 FL (Pb-Free) 1500 / Tape & Reel NTMFS4837NT3G NTMFS4837NT3G SO-8 FL (Pb-Free) 5000 / Tape & Reel °C 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 July, 2006 - Rev. 1 1 Publication Order Number: NTMFS4837N/D NTMFS4837N/D NTMFS4837N NTMFS4837N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 2.65 Junction-to-Ambient Steady State (Note 1) RqJA 56.75 Junction-to-Ambient Steady State (Note 2) RqJA Unit 142.2 °C/W 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 25 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ 5.7 VGS = 10 V to 11.5 V ID = 30 A 3.5 ID = 15 A ID = 30 A 5.9 ID = 15 A mV/°C 3.5 VGS = 4.5 V Forward Transconductance RDS(on) 1.5 5.9 gFS VDS = 15 V, ID = 15 A 5.0 7.5 15 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 2048 VGS = 0 V, f = 1 MHz, VDS = 12 V 444 CRSS 239 Total Gate Charge QG(TOT) 14.2 Threshold Gate Charge QG(TH) pF Gate-to-Source Charge QGS Gate-to-Drain Charge 2.98 VGS = 4.5 V, VDS = 15 V; ID = 30 A QGD Total Gate Charge 22 5.7 nC 6.7 QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 15 A 34.2 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 14.2 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 55 19 tf 10 td(ON) ns 8.5 tr td(OFF) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 25.6 25.2 9.2 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4837N NTMFS4837N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C 0.85 1.2 TJ = 125°C Unit 0.72 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time VGS = 0 V, IS = 30 A tRR Charge Time 24 ta Discharge Time 13 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A tb Reverse Recovery Charge V ns 11 QRR 14 nC Source Inductance LS 0.93 nH Drain Inductance LD PACKAGE PARASITIC VALUES Gate Inductance LG Gate Resistance 0.005 TA = 25°C 1.84 RG W 2.8 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 100 VGS = 10 V to 4.5 V 100 TJ = 25°C 80 4V 70 3.8 V 60 50 3.6 V 40 30 3.4 V 20 3.2 V 10 0 0 2 3 4 1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS 10 V 90 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 90 80 70 60 TJ = -55°C 50 40 TJ = 25°C 30 TJ = 125°C 20 10 0 5 1 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 3.0 8 Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics 0.016 0.015 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (V) T = 25°C ID = 30 A 0.01 TJ = 25°C 0.009 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 11.5 V 0.004 0.003 0.002 0.001 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 11 11.5 0 10 Figure 3. On-Resistance vs. VGS 20 30 40 50 60 70 ID, DRAIN CURRENT (A) 80 90 Figure 4. On-Resistance vs. Drain Current & Gate Voltage http://onsemi.com 3 1.80 100000 VGS = 0 V ID = 30 A VGS = 10 V & 4.5 V 1.60 TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) NTMFS4837N NTMFS4837N 1.40 1.20 1.00 1000 TJ = 125°C 100 10 1 0.80 TJ = 25°C 0.60 -50 -25 0 25 50 75 100 0 150 125 5 10 15 20 30 25 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage 12 3000 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25°C QT C, CAPACITANCE (pF) 10 CISS 2000 1000 COSS CRSS 0 10 5 0 5 10 15 20 8 6 Qgd 4 2 0 25 0 5 Figure 7. Capacitance Variation 20 25 30 30 IS, SOURCE CURRENT (A) VDD = 15 V ID = 15 A VGS = 11.5 V t, TIME (ns) 15 Figure 8. Gate-to-Source & Drain-to-Source Voltage vs. Total Charge 1000 100 td(off) tr tf td(on) 10 VGS = 0 V TJ = 25°C 25 20 15 10 5 0 0.50 1 1 10 QG, TOTAL GATE CHARGE (nC) VGS VDS VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10 VDD = 15.0 V VGS = 11.5 V ID = 30 A TJ = 25°C Qgs 100 RG, GATE RESISTANCE (W) 0.60 0.80 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current Figure 9. Resistive Switching Time Variation vs. Gate Resistance http://onsemi.com 4 35 NTMFS4837N NTMFS4837N EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 1000 VGS = 20 V Single Pulse TC = 25°C 100 10 ms 100 ms 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 10 ms dc 100 ms 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 250 ID = 22 A 225 200 175 150 125 100 75 50 25 0 25 50 75 Figure 11. Maximum Rated Forward-Biased Safe Operating Range 25°C 100°C ID (A) 125°C 10 1 125 Figure 12. Maximum Avalanche Energy vs, Starting Junction Temperature 100 1 100 TJ, STARTING JUNCTION TEMPERATURE (°C) 10 100 PULSE WIDTH (ms) Figure 13. EAS vs. Pulse Width http://onsemi.com 5 1000 150 NTMFS4837N NTMFS4837N PACKAGE DIMENSIONS SO-8 FLAT LEAD (DFN6) CASE 488AA-01 488AA-01 ISSUE B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 6 2X 0.20 C 5 4X E1 q E 2 c 1 2 3 A1 4 TOP VIEW 3X 0.10 C C e SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 8X DETAIL A C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 0.99 1.20 0.00 - 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 - 4.22 6.15 BSC 5.50 5.80 6.10 3.45 - 4.30 1.27 BSC 0.51 0.61 0.71 0.51 - - 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ - 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN b 0.10 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q e/2 L 1 4 K E2 L1 6 G M 5 D2 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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