NTE56051 NTE56052 60K/W - Datasheet Archive

TRIAC, 8A Low Logic Level Description: The NTE56051 and NTE56052 are glass passivated, Low Logic Level TRIACs in a TO220 type

NTE56051 NTE56051 & NTE56052 NTE56052 TRIAC, 8A Low Logic Level Description: The NTE56051 NTE56051 and NTE56052 NTE56052 are glass passivated, Low Logic Level TRIACs in a TO220 type package designed for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and other low power gate trigger circuits. Absolute Maximum Ratings: Repetitive Peak OffSate Voltage (Note 1), VDRM NTE56051 NTE56051 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56052 NTE56052 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (Full Sine Wave, TMB 102°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 8A NonRepetitive Peak OnState Current, ITSM (Full Sine Wave, TJ = +125°C prior to Surge, with Reapplied VDRMmax) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A2sec Repetitive RateofRise of OnState Current after Triggering, dIT/dt (ITM = 12A, IG = 0.2A, dIG/dt = 0.2A/µs) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (+), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs MT2 (), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/µs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40° to +150°C Thermal Resistance, JunctiontoMounting Base, RthJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4K/W Typical Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W 60K/W Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage, but the TRIAC may switch to the onState. The rateofrise of current should not exceed 6A/µs. Electrical Characteristics: (TJ = +25°C unless otherwise specfied) Parameter Symbol Test Conditions Min Typ Max Unit 2.5 5 mA MT2 (+), G () 3.5 5 mA MT2 (), G () 3.5 5 mA MT2 (), G (+) 6.5 10 mA 1.6 15 mA MT2 (+), G () 8.5 20 mA MT2 (), G () 1.2 15 mA MT2 (), G (+) 2.5 20 mA Static Characteristics Gate Trigger Current MT2 (+), G (+) IGT Latching Current MT2 (+), G (+) IL VD = 12V, IT = 0.1A VD = 12V, IT = 0.1A Holding Current IH VD = 12V, IT = 0.1A 1.5 10 mA OnState Voltage VT IT = 5A 1.4 1.7 V VD = 12V, IT = 0.1A 0.7 1.5 V 0.25 0.4 V VD = VDRMmax, TJ = +125°C 0.1 0.5 mA dVD/dt VDM = 67% VDRMmax, TJ = +125°C, Exponential Waveform, RGK = 1k 5 V/µs tgt ITM = 12A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/µs 2 µs Gate Trigger Voltage VGT VD = 400V, IT = 0.1A, TJ = +125°C OffState Leakage Current ID Dynamic Characteristics Critical RateofRise of OffState Voltage Gate Controlled TurnOn Time .420 (10.67) Max .110 (2.79) MT2 .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max .500 (12.7) Min MT1 Gate .100 (2.54) MT2