NTE5480 NTE5487 NTE5481 NTE5482 NTE5483 NTE5484 NTE5485 NTE5486 - Datasheet Archive

 

Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi­purpose PNPN silicon controlled

 

NTE5480 NTE5480 thru NTE5487 NTE5487 Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 NTE5480 through NTE5487 NTE5487 are multi­purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in voltages ranging from 25V to 600V. Features: D Uniform Low­Level Noise­Immune Gate Triggering: IGT = 10mA Typ @ TC = +25°C D Low Forward "ON" Voltage: vT = 1V Typ @ 5A @ +25°C D High Surge­Current Capability: ITSM = 100A Peak D Shorted Emitter Construction Absolute Maximum Ratings: (TJ = ­40° to +100°C unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM or VRRM NTE5480 NTE5480 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V NTE5481 NTE5481 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5482 NTE5482 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5483 NTE5483 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5484 NTE5484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5485 NTE5485 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5486 NTE5486 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE5487 NTE5487 (This device is discontinued) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Forward Current RMS, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak Forward Surge Current (One Cycle, 60Hz, TJ = ­40° to +100°C, ITSM . . . . . . . . . . . . . . . 100A Circuit Fusing (t 8.3ms, TJ = ­40° to +100°C), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A2s Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­40° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­40° to +150°C Typical Thermal Resistance, Junction­to­Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W Typical Thermal Resistance, Case­to­Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current (Continuous DC) Gate Trigger Voltage (Continuous DC) Forward "ON" Voltage IGT VGT ­ ­ 10 µA ­ ­ 2 mA VD = 7V, RL = 100, Note 3 ­ 10 30 mA ­ ­ 60 mA ­ 0.75 1.5 V ­ ­ 2.5 V TJ = +100°C IDRM, IRRM Rated VDRM or VRRM, TJ = +25°C Gate Open TJ = +100°C TC = ­40°C Peak Forward or Reverse Blocking Current 0.2 ­ ­ V TC = ­40°C VD = 7V, RL = 100 vTM ITM = 15.7A, Note 4 ­ 1.4 2.0 V IH VD = 7V, Gate Open ­ 10 30 mA ­ ­ 60 mA Holding Current TC = ­40°C Turn­On Time (td + tr) ton IG = 20mA, IF = 5A, VD = Rated VDRM ­ 1 ­ µs Turn­Off Time toff IF = 5A, IR = 5A, dv/dt = 30V/µs ­ 15 ­ µs ­ 25 ­ µs ­ 50 ­ V/µs Forward Voltage Application Rate (Exponential) dv/dt TJ = +100°C, VD = Rated VDRM Gate Open, TJ = +100°C, VD = Rated VDRM Note 3. For optimum operation, i.e. faster turn­on, lower switching losses, best di/dt capability, recommended IGT = 200mA minimum. Note 4. Pulsed, 1ms max., Duty Cycle 1%. .431 (10.98 Max Gate Cathode .855 (21.7) Max .125 (3.17) Max .453 (111.5) Max Anode 10­32 UNF­2A