NTE475 - Datasheet Archive

 

Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for

 

NTE475 NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 NTE475 is an NPN silicon annular RF power transistor, optimized for large­scale power­amplifier and driver applications to 300MHz. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector­Base Voltage,VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.3mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector­Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1 18 ­ ­ V Collector­Emitter Breakdown Voltage V(BR)CEO IC = 0.25mA, IE = 0 36 ­ ­ V Emitter­Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 ­ ­ V IC = 100mA, VCE = 13.6V, f = 100MHz ­ 350 ­ MHz Cob VCB = 13.6V, IE = 0, f = 100kHz ­ 12.5 20.0 Power Input Pin RL = 50, Pout = 12W, f = 175MHz ­ ­ 4.0 W Common­Emitter Amplifier Power Gain Gpe 4.77 5.0 ­ dB 80 ­ ­ % Dynamic Characteristics Current Gain ­ Bandwidth Product Output Capacitance fT pF Functional Tests Collector Efficiency Note 1. Pulsed thru a 25mH inductor. Collector .200 (5.08) Dia Emitter/Stud .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) Max .113 (2.88) 10­32 NF­2A .320 (8.22) Max .078 (1.97) Max .455 (11.58) Max