NTE42 NTE43 - Datasheet Archive

 

Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA =

 

NTE42 NTE42 (NPN) & NTE43 NTE43 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector Power Dissipation (Per Unit), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +125°C Note 1. NTE42 NTE42 is a discontinued device and no longer available. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100A, RBE = 50 - - V Collector-Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 - - V ICBO VCB = 35V, IE = 0 - - 0.1 A ICEO VCE = 35V, RBE = - - 10 A Emitter-Cutoff Curent IEBO VEB = 2V, IC = 0 - - 0.1 A DC Current Gain hFE VCE = 6V, IC = 1mA 400 - 800 VCE(sat) IC = 10mA, IB = 1mA - - 0.6 V - 1 10 mV Collector-Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Voltage Differential Small Signal Current Gain Ratio Transistion Frequency VBE1-VBE2 VCE = 6V, IC = 1mA hfe1/hfe2 VCE = 6V, IC = 1mA 0.8 0.98 1.0 fT VCE = 6V, IE = 1mA - 150 - MHz Collector Output Capacitance Cob VCB = 6V, IE = 0, f = 1MHz - 2.5 - pF Noise Figure NF VCE = 6V, IE = 0, f = 1kHz, RG = 10k - 0.5 - dB Noise Voltage RMS NV1 VCE = 10V, IE = 1mA, Rg = 100k, GV = 80dB - 100 - mV - 0.5 - V Peak NV2 .320 (8.13) Max .220 (5.59) Max B C E C B .414 (10.52) Max 1 5 .050 (1.27) .142 (3.6) Max