NTE3102 - Datasheet Archive

 

Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a gallium arsenide infrared

 

NTE3102 NTE3102 Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an "ON" into an "OFF" state. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Total Device Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +100°C Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C Infrared Emitting Diode Forward Current, IF Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width 1µs, PRR 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/°C Phototransistor Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Emitter­Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Emitter Reverse Breakdown Voltage V(BR)R IR = 10µA 6 ­ ­ V Forward Voltage VF IF = 60mA ­ ­ 1.7 V Reverse Current IR VR = 5V ­ ­ 100 nA Capacitance Ci V = 0, f = 1MHz ­ 30 ­ pF Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided. Electrical Characteristics (Cont'd): (TA = +25°C, Note 1 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Detector Collector­Emitter Breakdown Voltage V(BR)CEO IC = 1mA 55 ­ ­ V Emitter­Collector Breakdown Voltage V(BR)ECO IE = 100µA 6 ­ ­ V Collector Dark Current ICEO VCE = 45V ­ ­ 100 nA Capacitance Cce VCE = 5V, f = 1MHz ­ 3.3 5.0 pF ICE(on) VCE = 5V, IF = 5mA 0.15 ­ ­ mA VCE = 5V, IF = 20mA 1.0 ­ ­ mA VCE = 5V, IF = 30mA 1.9 ­ ­ mA IC = 1.8mA, IF = 30mA ­ ­ 0.4 V VCC = 5V, IF = 30mA, RL = 2.5k ­ 8 ­ µs ­ 50 ­ µs Coupled Photodiode Current Collector­Emitter Saturation Voltage VCE(sat) Turn­On Time ton Turn­Off Time toff Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided. .124 (3.15 + D E + D ­ Detector E ­ Emitter .246 (6.25) .136 (3.54) Min Sensing Area .433 (11.0) Max .315 (8.0) Min .295 (7.49) Max .303 (7.69) Min Seating Plane .110 (2.79) Max