NTE3041 - Datasheet Archive

 

Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6­Lead DIP type package consisting of a

 

NTE3041 NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 NTE3041 is an optoisolator in a 6­Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions D Guaranteed Switching Speeds Applications: D General Purpose Switching Circuits D Interfacing and Coupling Systems of Different Potentials and Impedances D Regulation Feedback Circuits D Monitor & Detection Circuits D Solid State Relays Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Input LED Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA LED Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . . . . . 120mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/°C Output Transistor Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Detector Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . 150mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/°C Total Device Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . 7500V Total Device Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/°C Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +100°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +150°C Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IF = 10mA 0.8 1.15 1.5 V IF = 10mA, TA = ­55°C 0.9 1.3 1.7 V IF = 10mA, TA = +100°C 0.7 1.05 1.4 V Input LED Forward Voltage VF Reverse Leakage Current IR VR = 6V ­ ­ 10 µA Capacitance CJ V = 0, f = 1MHz ­ 18 ­ pF VCE = 10V ­ 1 50 nA VCE = 30V, TA = +100°C ­ ­ 500 µA VCB = 10V ­ 0.2 20 nA VCB = 10V, TA = +100°C ­ 100 ­ nA Output Transistor Collector­Emitter Dark Current Collector­Base Dark Current ICEO ICBO Collector­Emitter Breakdown Voltage V(BR)CEO IC = 1mA 30 45 ­ V Collector­Base Breakdown Voltage V(BR)CBO IC = 100µA 70 100 ­ V Emitter­Base Breakdown Voltage V(BR)EBO IE = 100µA 7.0 7.8 ­ V DC Current Gain hFE IC = 2mA, VCE = 5V ­ 400 ­ Collector­Emitter Capacitance CCE VCE = 5V, f = 1MHz ­ 7 ­ pF Collector­Base Capacitance CCB VCB = 0, f = 1MHz ­ 19 ­ pF Emitter­Base Capacitance CEB VEB = 0, f = 1MHz ­ 9 ­ pF IF = 10mA, VCE = 10V 10 30 ­ mA IF = 10mA, VCE = 10V, TA = ­55°C 4 ­ ­ mA IF = 10mA, VCE = 10V, TA = +100°C 4 ­ ­ mA IC = 0.5mA, IF = 10mA ­ 0.14 0.3 V IC = 2mA, VCC = 10V, RL = 100 ­ 7.5 10 µs Coupled Output Collector Current Collector­Emitter Saturation Voltage IC VCE(sat) Turn­On Time ton Turn­Off Time toff ­ 5.7 10 µs Rise Time tr ­ 3.2 ­ µs Fall Time tf ­ 4.7 ­ µs 7500 ­ ­ V ­ ­ 100 µA 1011 ­ ­ ­ 0.2 2.0 pF Isolation Voltage VISO f = 60Hz, t = 1sec Isolation Current IISO VI­O = 3550Vpk Isolation Resistance RISO V = 500V Isolation Capacitance CISO V = 0, f = 1MHz Pin Connection Diagram Base Anode 1 6 Cathode 2 5 Collector N.C. 3 4 Emitter 6 4 2 1 5 3 .260 (6.6) Max .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .085 (2.16) Max .300 (7.62) .350 (8.89) Max .100 (2.45)