NTD85N02R 369AA 85N02R NTD85N02R/D NTD85N02RG NTD85N02R-001 NTD85N02R-1G

Power MOSFET 24 Volts, 85 Amps Single N-Channel, DPAK/IPAK http://onsemi.com Features · · · ·

NTD85N02R NTD85N02R Power MOSFET 24 Volts, 85 Amps Single N-Channel, DPAK/IPAK http://onsemi.com Features · · · · · Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Low Gate Charge to Minimize Switching Losses Pb-Free Packages are Available V(BR)DSS RDS(ON) MAX ID MAX 24 V 5.2 mW @ 10 V 85 A N-Channel D Applications · CPU Power Delivery · DC-DC Converters · Low Side Switching G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 24 V Gate-to-Source Voltage VGS ±20 V 17 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 85°C 4 4 12 PD 2.4 W 1 1 2 TA = 25°C Steady State ID TA = 85°C 3 A 12 DPAK CASE 369AA 369AA STYLE2 8.8 TA = 25°C PD 1.25 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 85 A Power Dissipation RqJC (Note 1) TC = 25°C PD 78.1 IDM 192 A 3 DPAK-3 CASE 369D STYLE 2 W TA = 25°C, tp = 10ms 2 Pulsed Drain Current TC = 85°C Current Limited by Package TA = 25°C MARKING DIAGRAM & PIN ASSIGNMENTS 58 4 1 2 YWW 85 N02G IDmaxPkg 45 A TJ, TSTG -55 to +150 °C 3 IS 78 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain-to-Source Avalanche Energy TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 13 Apk, L = 1.0 mH, RG = 25 W) EAS 85 mJ Y WW 85N02R 85N02R G TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) 4 1 Gate 2 Drain 3 Source 4 Drain = Year = Work Week = Specific Device Code = Pb-Free Package YWW 85 N02G Power Dissipation RqJA (Note 2) ID S 1 2 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2007 January, 2007 - Rev. 9 1 Publication Order Number: NTD85N02R/D NTD85N02R/D NTD85N02R NTD85N02R THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction-to-Case (Drain) Parameter RqJC 1.6 °C/W Junction-to-TAB (Drain) RqJC-TAB 3.5 Junction-to-Ambient Steady State (Note 1) RqJA 52 Junction-to-Ambient Steady State (Note 2) RqJA 100 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 24 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS 28 V 20.5 VGS = 0 V, VDS = 24 V mV/°C TJ = 25 °C 1.5 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source on Resistance RDS(ON) 1.0 1.5 4 ID = 20 A 4.8 VGS = 4.5 V Forward Transconductance VGS = 10 V ID = 20 A 6.5 gFS VDS = 10 V, ID = 15 A 38 mV/°C 5.2 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 359 Total Gate Charge QG(TOT) 17.7 Threshold Gate Charge QG(TH) Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge QGS 2050 VGS = 0 V, f = 1.0 MHz, VDS = 20 V pF 1.6 VGS = 5.0 V, VDS = 10 V; ID = 10 A QGD QG(TOT) 871 2.6 nC 7.1 VGS = 10 V, VDS = 10 V; ID = 10 A 35.1 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 6.3 VGS = 10 V, VDS = 10 V, ID = 30 A, RG = 3.0 W tf 77 25 12 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTD85N02R NTD85N02R ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C 0.81 1.0 TJ = 125°C 0.65 Unit DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time VSD tRR ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A V 37.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A 16.8 ns 20.7 QRR 27 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK* LD PACKAGE PARASITIC VALUES TA = 25°C 1.88 Gate Inductance LG 3.46 Gate Resistance RG 1.2 W *Assume standoff of 110 mils. ORDERING INFORMATION Device NTD85N02R NTD85N02R NTD85N02RG NTD85N02RG Package Shipping DPAK DPAK (Pb-Free) NTD85N02R-001 NTD85N02R-001 IPAK NTD85N02R-1G NTD85N02R-1G IPAK (Pb-Free) 75 Units / Rail NTD85N02RT4 NTD85N02RT4 NTD85N02RT4G NTD85N02RT4G 800 / Tape & Reel DPAK DPAK (Pb-Free) 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D BRD8011/D. http://onsemi.com 3 NTD85N02R NTD85N02R 160 4.4 V 5V 3.8 V 6V 120 VDS 10 V VGS = 4 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 160 10 V 3.6 V 3.4 V 3.2 V 80 3V 2.8 V 40 2.6 V 2.4 V 120 80 TJ = 25°C 40 TJ = 125°C TJ = -55°C 0 0 0 2 4 6 8 10 0 1 2 3 4 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 6 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.018 VGS = 10 V 0.014 0.010 TJ = 125°C 0.006 TJ = 25°C TJ = -55°C 0.002 0 40 120 80 160 0.018 VGS = 4.5 V 0.014 TJ = 125°C 0.010 TJ = 25°C 0.006 TJ = -55°C 0.002 0 80 40 120 160 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Temperature 100,000 1.8 1.6 VGS = 0 V ID = 40 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (AMPS) TJ = 150°C 10,000 1.4 1.2 1.0 TJ = 125°C 1000 0.8 0.6 -50 100 -25 0 25 50 75 100 125 150 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 25 NTD85N02R NTD85N02R POWER MOSFET SWITCHING VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 4800 C, CAPACITANCE (pF) TJ = 25°C 4000 Ciss 3200 Crss 2400 Ciss 1600 Coss 800 Crss VDS = 0 V VGS = 0 V 0 10 0 5 VGS 10 5 15 20 VDS 6 QT VGS 4 Q1 2 ID = 10 A TJ = 25°C 0 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4 8 12 16 QG, TOTAL GATE CHARGE (nC) 20 Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge Figure 7. Capacitance Variation 80 100 IS, SOURCE CURRENT (AMPS) 1000 tr td(off) tf 10 td(on) VDS = 10 V ID = 40 A VGS = 10 V VGS = 0 V 70 60 50 40 30 20 10 TJ = 25°C 0 1 1 10 RG, GATE RESISTANCE (OHMS) 0 100 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1000 10 ms 100 100 ms 1 ms 10 1 VGS = 20 V SINGLE PULSE TC = 25°C 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1.0 Figure 10. Diode Forward Voltage versus Current Figure 9. Resistive Switching Time Variation versus Gate Resistance I D, DRAIN CURRENT (AMPS) t, TIME (ns) Q2 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 100 NTD85N02R NTD85N02R EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 10 Normalized to RqJC at Steady State 1 r(t), 0.1 0.01 0.00001 0.001 0.0001 0.01 0.1 1 10 t, TIME (s) Figure 12. Thermal Response EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) 10 Normalized to RqJA at Steady State, 1 square Cu Pad, Cu Area 1.127 in2, 3 x 3 inch FR4 board 1 r(t), 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 6 10 100 1000 NTD85N02R NTD85N02R PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA-01 369AA-01 ISSUE A -T- C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 A S 1 2 DIM A B C D E F H J L R S U V Z Z H 3 U F J L STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN D 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 - 0.035 0.050 0.155 - T SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 3.0 0.118 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 - 0.89 1.27 3.93 - NTD85N02R NTD85N02R PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 369D-01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 - MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 - STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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