500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
NPTB00025B MACOM RF Power Field-Effect Transistor visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : NPTB00025B Supplier : M/A-COM Manufacturer : Richardson RFPD Stock : - Best Price : $169.45 Price Each : $169.45
Shipping cost not included. Currency conversions are estimated. 

NPTB00025

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Ordering Information1 Part Number NPTB00025B Description NPTB00025 in AC200B-2 Metal-Ceramic , NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - , ) NPTB00025 Page 1 NDS-006 Rev. 4, April 2013 NPTB00025 DC Specifications: TC = 25°C Symbol , , IDQ = 225mA NPTB00025 Page 2 NDS-006 Rev. 4, April 2013 NPTB00025 Load-Pull Data, Reference , NRF1 Devices as a Function of Junction Temperature NPTB00025 Figure 6 - Typical CW Performance in Nitronex
Original
4000MH 500-1000MH EAR99 3000MH

NPTB00025

Abstract: NPTB00025B . 2009 NPTB00025 Datasheet Ordering Information1 Part Number Description NPTB00025B , NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 , JESD22-A114) 1A (>250V) MM Machine Model ESD Rating (per JESD22-A115) M1 (>50V) NPTB00025 Datasheet Page 1 NDS-006 Rev. 2, May. 2009 NPTB00025 Datasheet DC Specifications: TC = 25 , Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 225mA NPTB00025 Datasheet Page 2
Nitronex
Original
AC200BM-F2 AC200B UPW1C151MED ATC600F1R2AT
Abstract: Information1 Part Number NPTB00025B Description NPTB00025 in AC200B-F2 Bolt-Down Package 1: To ind a , NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - , ) NPTB00025 Page 1 NDS-006 Rev. 4, April 2013 NPTB00025 DC Speciications: TC = 25°C Symbol , , IDQ = 225mA NPTB00025 Page 2 NDS-006 Rev. 4, April 2013 NPTB00025 Load-Pull Data, Reference , Devices as a Function of Junction Temperature NPTB00025 Figure 6 - Typical CW Performance in Nitronex
Original

GRM188R72A104KA35D

Abstract: 12101C105KAT2A AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under , -001 NPTB00025Application Board/Layout/BOM Name C1 C2 C4, C9 C5, C8 C6, C7 C6 C7 C8 C10 C11 C14, C16 C13, C15 , Yageo Corp Alberta Printed Circuits ATC600F3R9B ATC600F1R0B NPTB00025 ERJ-2RKF49R9X RL0603FR-070R33L nbd-020_rev1 2 of 3 AD-001 WCDMA Performance of the NPTB00025 - 2.11GHz (Idq: 15 0 m A , V ds
Nitronex
Original
GRM188R72A104KA35D 12101C105KAT2A GaN Bias 25 watt ELXY630ELL271MK25S 06031C103KAT2A atc600f 28VDC LXY630ELL271MK25S ATC600F120B APB07-052

NPTB00004

Abstract: NPT1012 48 6.3 NPT1012 AC200B DC-6.0 28 3.0 25 12.0 65 4.0 NPTB00025 , NPT1007 CW 500-1000MHz 30dB 80W NPTB00004 NPTB00025 NPT25100 CW 500-1000MHz
Nitronex
Original
NPT25015 NPT1004 NPTB00050 NPT35050A NPT1010 GaN amplifier 100W Gan on silicon transistor GaN amplifier Nitron PO150S NPT35015 AC360B

NPT25100

Abstract: NPTB00004 , 2%EVM NPT35015 PO150S 3.0-6.0 28 3.5 18 11.0 48 1.5W, 2% EVM NPTB00025 , 800-1000MHz 32dB 25W NPTB00004 NPTB00025 NPT25100 CW 500-1000MHz 33dB 50W CW
Nitronex
Original
NPT1005 AC360P 2112-17 AC780B-2 AC780P-2 AC1230B-4 AC780B-4 800-1000MH

NPTB0004

Abstract: GaN amplifier 100W . Blue triangle =S11 of the NPTB00025 measured at ID = 200mA (IDQ) 2. Purple Box = Conjugate of ZSOURCE , 3.0 2.0 1.0 0 0.8 and Equivalent Circuit Model 0.6 Figure 1. NPTB00025 Input , Factor NPTB00004 NPTB00025 NPTB00050 NPT25100 18 4.5 2.25 1 4.2. Output Capacitance , NPT35015 NPTB00025 NPTB00050 NPT25100 10 40 40 40 80 180 Device performance variation over
Nitronex
Original
AN-010 NPTB0004 vmos fet GaN amplifier temperature compensation future scope of wiMAX AN-004 NPTB00004

NPTB0004

Abstract: NPTB00004 21 / 3GHz 14.5 / 3GHz 55 NPTB00025 AC200B DC-4.0 - 32 25 / 3GHz 13.5
Nitronex
Original
NPTB00120 AC200S RF Power Transistors RF Transistor Selection rf transistor 2.5GHz npt35050 NPT25200 NPT35100 NPTB00040 AC360C NPTB00080

NPTB00004

Abstract: NPT25015 65 4.0 AC200B NPTB00025 DC-4.0 28 3.0 25 13.5 65 5.3 AC200B
Nitronex
Original
AC200P AC360B/C

NPTB00004

Abstract: NPT25015 (°C) TJ (°C) NPTB00025 NPT35050 NPTB00050 NPT25100 25 32 50 90 10.5 11.0 10.0 , °C. Calculations in Table 13 show that there is some margin in baseplate temperatures for the NPTB00025 and
Nitronex
Original
AN-012 ofdm equations transistor study AN012 1100C an-012 nitronex 64-QAM

GaN amplifier temperature compensation

Abstract: GAN temperature compensation ) (Absolute Maximum) Recommended Resistor Value RG(ohm) NPTB00004 2 2 10 200 NPTB00025
Nitronex
Original
AN-009 GAN temperature compensation 20k ohm potentiometer hemt biasing thermistor 40k table AN009 irfr5305