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Part : NPTB00004A Supplier : M/A-COM Manufacturer : Richardson RFPD Stock : 2,672 Best Price : $14.73 Price Each : $14.73
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NPTB00004

Catalog Datasheet MFG & Type PDF Document Tags

nptb00004

Abstract: NPTB00004DT NPTB00004 Datasheet Ordering Information1 Part Number Order Multiple Description NPTB00004DT 97 NPTB00004DR Tube; NPTB00004 in D (PSOP2) Package 1500 Tape and Reel; NPTB00004 in D (PSOP2) Package , NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC® NRF1 , Gain 11.2 dB 9 % 1.0 % Drain Efficiency Error Vector Magnitude NPTB00004 Datasheet Page 1 NDS-002 Rev. 3, May. 2009 NPTB00004 Datasheet DC Specifications: TC=25°C Symbol
Nitronex
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EAR99 250v m1 APP-NPTB00004-25 NBD-012 0J100 j105 250v j105100 2500MH 6000MH 64-QAM
Abstract: NPTB00004DT 97 NPTB00004DR Tube; NPTB00004 in D (PSOP2) Package 1500 Tape and Reel; NPTB00004 , NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC® NRF1 process - A , °C. Measured in Load Pull System Symbol GP h EVM NPTB00004 Parameter Typ Units Power Gain , , April 2013 NPTB00004 DC Specifications: TC=25°C Symbol Parameter Min Typ Max Units , NPTB00004 Page 2 1A (>250V) M1(>50V) NDS-002 Rev 7, April 2013 NPTB00004 Load-Pull Data Nitronex
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Abstract: Description NPTB00004DT 97 NPTB00004DR Tube; NPTB00004 in D (PSOP2) Package 1500 Tape and , NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC® NRF1 process - A , °C. Measured in Load Pull System Symbol GP h EVM NPTB00004 Parameter Typ Units Power Gain , , April 2013 NPTB00004 DC Speciications: TC=25°C Symbol Parameter Min Typ Max Units , NPTB00004 Page 2 1A (>250V) M1(>50V) NDS-002 Rev 7, April 2013 NPTB00004 Load-Pull Data Nitronex
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NPTB00004

Abstract: NPT1012 PSAT (W) Power Gain (dB) CW Drain Efficiency @ PSAT (%) NPTB00004 PO150S DC , Output Power NPT1012 NPT1010 CW 500-1000MHz 33dB 50W NPTB00004 NPT1012 NPT1007 CW 500-1000MHz 30dB 80W NPTB00004 NPTB00025 NPT25100 CW 500-1000MHz 33dB 40W NPTB00004 NPT25015 NPTB00050 CW 500-1000MHz 40dB 20W NPTB00004 NPT25015 2x NPT25100 WiMAX 2.5-2.7GHz 41dB 20W2 NPTB00004 NPT25015 NPT25100
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AC200B NPT1004 NPT35050A GaN amplifier 100W Gan on silicon transistor GaN amplifier Nitron Gan on silicon substrate NPT35015 AC360B AC780B-2

ATC 600F

Abstract: NPTB00004 AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm , 600F0R2JT 90121-0123 132262 132262 NPTB00004 ERJ-2GEJ201X ERJ-2GE0R00X ERJ-2GE0R00X ERJ , Application Board: AD-016 AD-016: WiMax Performance of the NPTB00004 at 5.7GHz 50 45 40 35 30 25 20 , -016: WiMax Performance of the NPTB00004 at 5.8GHz 5 50 45 40 35 30 25 20 15 10 5 0 Gain
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GRM188R72A104KA35D 06031C103KAT2A 490-3285-2-ND ATC 600F 100uf 16v murata tantalum P033A ERJ2GE0R00X 28VDC APB08-169 TAJA106M016R 12101C105KAT2A

NPTB00004

Abstract: NPT25015 (%) Thermal Resistance (°C/W) Package NPTB00004 DC-6.0 28 2.5 5 19.5 55 , 500-1000MHz 80W CW 30dB NPTB00004 NPT1012 NPT1007 500-1000MHz 60W CW 33dB NPTB00004 NPT1012 NPT1010 500-1000MHz 20W CW 40dB NPTB00004 NPT25015 NPTB00050 500-1000MHz 15W CW 40dB NPTB00004 NPT25015 NPT1012 2.5-2.7GHz 20W2 WiMAX 41dB NPTB00004 NPT25015 2xNPT25100 2.5-2.7GHz 10W2 WiMAX 41dB NPTB00004 NPT25015
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rf power transistors AC360P AC780P-2 AC780B-4 500-1000MH AC200P AC360B/C

AD-009

Abstract: ad009 AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF , AD-009 AD-009 NPTB00004 Application Board Layout / BOM s 3 4 5 6 7 8 9 10 11 12 13 , ATC600F0R8B ATC600F3R3B 90121-0123 132262 132262 NPTB00004 ERJ-2GEJ201X ERJ-2GE0R00X ERJ-6BWJR033W ERJ-2GE0R00X Extrusion#: 64690 nbd-012_rev1 2 of 3 AD-009 AD-009 NPTB00004 WiMax Data AD
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ATC600F330B ATC600F2R7B ad009 smd cap Cer cap 100uf AD009 smd 0603 cap APB07-212 06031C102KAT2A ECE-V1JA101P ATC600F100B

NPT25100

Abstract: NPTB00004 @ PSAT (%) Linear Output Power NPTB00004 PO150S DC-6.0 28 2.5 5 19.5 55 , Driver Final Application Frequency Gain Output Power NPTB00004 NPT25015 NPT1005 WiMAX 2.5-2.7GHz 41dB 20W, 2% EVM2 NPTB00004 NPT25015 NPT25100 WiMAX 2.5-2.7GHz 41dB 10W, 2% EVM2 - NPTB00004 NPT1004 WiMAX 2.5-2.7GHz 24dB 5W, 2% EVM2 NPTB00004 NPT25015 NPT25100 PCS/UMTS/LTE 1.93-1.99GHz 2.11-2.17GHz 42dB 45W, -35dBc ACPR1
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2112-17 AC1230B-4 800-1000MH

NPTB00004

Abstract: NPT25015 . 9 4.4.1.1. Via Farm Thermal Scan Results of the , . 12 4.4.2.1. Cu Coin Thermal Scan Results of the , via structure and solder pad layout utilized for the NPTB00004. The via holes are ~0.012" (0.33mm) in , Calculation Table for CW Applications Device NPTB00004 NPT25015 NPT35015 NPT1004 j-c Drain POUT (W , 's thermal performance. Thermal imaging results of the NPTB00004 on a via farm vs. a Cu coin are presented
Nitronex
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AN-012 ofdm equations transistor study AN012 npt35050 1100C NPT35050

ATC 600F

Abstract: NPTB00004 AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm , 600F0R2JT 90121-0123 132262 132262 NPTB00004 ERJ-2GEJ201X ERJ-2GE0R00X ERJ-2GE0R00X ERJ , Application Board: AD-015 AD-015: WiMax Performance of the NPTB00004 at 5.1GHz 50 45 40 35 30 25 20 , Pout (dBm) AD-015: WiMax Performance of the NPTB00004 at 5.2GHz 50 45 40 35 30 25 20 15
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transistors ND C9 10UF 01UF 100UF ad015 APB09-168 600F1R8JT 600F3R9JT 600F4R7JT 600F0R8JT 478-3859-2-ND
Abstract: below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004. RF Specifications (CW, 2.5 , NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A , Replacement for NPTB00004 Applications ï'· ï'· ï'· ï'· ï'· ï'· Broadband General Purpose Defense , 5W GaN HEMT Product Description The NPTB00004A GaN HEMT is a wideband transistor optimized for , , 053113 NPTB00004A DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Units Nitronex
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NDS-036

NPTB0004

Abstract: NPTB00004 Voltage (V) Output Power PSAT (W) Power Gain (dB) CW Drain Efficiency @ PSAT (%) NPTB00004
Nitronex
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NPTB00120 AC200S NPTB0004 RF Transistor Selection rf transistor 2.5GHz Selection guide of Transistors NPT25200 NPT35100 NPTB00040 AC360C NPTB00080
Abstract: below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004. RF Specifications (CW, 2.5 , NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A , Replacement for NPTB00004 Applications ï'· ï'· ï'· ï'· ï'· ï'· Broadband General Purpose Defense , 5W GaN HEMT Product Description The NPTB00004A GaN HEMT is a wideband transistor optimized for , -036 Rev. 2, 011414 NPTB00004A DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Nitronex
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NPTB0004

Abstract: GaN amplifier 100W Factor NPTB00004 NPTB00025 NPTB00050 NPT25100 18 4.5 2.25 1 4.2. Output Capacitance , Gate Current for Each Nitronex Product Device Maximum Gate Current (mA) NPTB00004 NPT25015
Nitronex
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AN-010 GaN Bias 25 watt vmos fet GaN amplifier temperature compensation future scope of wiMAX AN-004 NPTB00004

GaN amplifier temperature compensation

Abstract: GAN temperature compensation ) (Absolute Maximum) Recommended Resistor Value RG(ohm) NPTB00004 2 2 10 200 NPTB00025
Nitronex
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AN-009 GAN temperature compensation 20k ohm potentiometer hemt biasing thermistor 40k table AN009 irfr5305

GaN amplifier

Abstract: GaN amplifier 100W , Jan 2, 1948, MIT Research Laboratory of Electronics. 2. Nitronex NPTB00004 Data Sheet
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AN-013 GaAs HEMTs X band 25W Amplifier Research high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic MRF6S9125
Abstract: NPTB00004Q Advanced Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC , 5W GaN HEMT Product Description The NPTB00004Q GaN HEMT is a wideband transistor optimized for , NPTB00004Q Advanced DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Units , NPTB00004Q Advanced Figure 1 - QFN4X4-24 Plastic Package Dimensions (all dimensions in inches , grounded Advanced Datasheet Page 3 NDS-041 Rev. 1, 052413 NPTB00004Q Advanced Nitronex, LLC Nitronex
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