NPN110 2SC23 2SC24 110M5 2SC57 110MS 2SC437 210MS 2SC438 80QM5 BLY37 700MS - Datasheet Archive

 

7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÎS'fi m > v 1

 

SYMBOLS & CODES EXPLAINED 7. "N" Channel - SILICON FIELD EFFECT TRANSISTORS XT 1ÀSSMAX RATINGS« ÃŽS'fi m > v 1 )_[BVdss IBVgssJ Idss @ & ! 1 Id Ig Vgs=0& Vds h 1 Vds>Vp jyi_ (V) 1 IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110 NPN110. SILICON PNP|ll. SILICON NPN High Power Transistors 40UC 45°C 50°C 75"C J Symbols indicate temperature at which derating starts. 0 - With infinite heat sink Following symbols indicate temp Y - Power at which derating starts: Output t - 40°C 0 - 60°C ♦ - 80°C * - 45°C § - 70°C A - Pulsed # - 50°C $ - 100°C %- Min. * - 50-65°C A - Ambient 0 - 70 S0°C C - Case # - 85-100°C J - Junction ♦ - 110-125° C S - Storage t - 130-135° C $ - 140-165°C § - 170-200°C â-¼ - Over 200°C 0-1 - $ ~ Minimum # - Pulsed or Peak - At temperature 25° C Case 0- AtVCB ^ Max. VCB (see mfr. spec.) #- 'CEX * - 1 A 1 cer " CEO S - 'CES ♦ - At Temp. 25°C Case $ - Typical t - At Temp. > 25°C - Typical Value # - Pulsed - BV^^^or punch-through 1 ~ BVCES * - Pulsed 0 - BVceo(SUS> BV^ Minimum A - I d- I f - At Temp. 25°C Case