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HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
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HFA3101B96 Intersil Corporation 6 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SOIC-8 visit Intersil

NPN/bow 94c

Catalog Datasheet MFG & Type PDF Document Tags

BDW94B

Abstract: NPN/bow 94c STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER , silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO , R1 Typ. = 10 K R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN PNP Uni t BDW 93C BDW 94B BDW 94C V CBO Collector-Base Voltage (IE = 0) 80 100 V , Un it for BDW94B for BDW93C/94C T cas e = 150 oC for BDW94B for BDW93C/94C V CB = 80 V V
STMicroelectronics
Original
BDW93C BDW94C NPN/bow 94c bdw93c applications BDW93C PNP 94B DIODE BDW94B/BDW94C BDW93C/BDW94B/BDW94C P011C

BDW 65 C

Abstract: BDW93C Parameter Value Uni t NPN BDW 93B BDW 93C PNP BDW 94B BDW 94C V CBO , SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER , BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are , Current (IE = 0) Test Cond ition s Min. Typ . Un it for BDW 93B/94B for BDW 93C/94C T cas e = 150 o C for BDW 93B/94B for BDW 93C/94C V CB = 80 V V CB = 100 V 100 100 µA µA
STMicroelectronics
Original
BDW93B BDW 65 C Darlington npn BDW93B/BDW93C BDW93B/BDW93C/BDW94B/BDW94C

BDW93C

Abstract: bdw93c applications STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER , BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted , DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN , for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C V CB = 80 V VCB = 100 V 100 100 , 2 mA I CEO Collector Cut-off Current (I B = 0) for BDW94B for BDW93C/94C IEBO
STMicroelectronics
Original
BDW93C TRANSISTOR malaysia bdw93c

bdw93c applications

Abstract: BDW93C STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER , is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in , Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN PNP , . Unit for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C V CB = 80 V VCB = , /94C IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(s us) Collector-Emitt er
STMicroelectronics
Original

BOW93B

Abstract: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN , INDUSTRIAL EQUIPMENT D E S C R IP T IO N 3 1 The BDW93B, and BDW93C are silicon epitaxial-base NPN , A B S O L U T E M A X IM U M R A T IN G S Symbol Parameter NPN PNP BDW93B BDW94B 80 80 , Parameter Collector Cut-off Current (I e = 0) Unit UA mA for BDW93B/94B for BDW93C/94C Tease = 1 50 °C for BDW93B/94B for BDW93C/94C for BDW93B/94B for BDW93C/94C V6B = 5 V lc = 100 mA V cb = 8 0 V
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BOW93B

BDW93C

Abstract: BDW94C STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER , is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in , Typ. = 10 Kâ"¦ R2 Typ. = 150 â"¦ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN , for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C V CB = 80 V VCB = 100 V , mA mA 2 mA I CEO Collector Cut-off Current (I B = 0) for BDW94B for BDW93C/94C
STMicroelectronics
Original

BDW93C

Abstract: bdw93c applications PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors , Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN BDW93B , BDW93B/94B for BDW93C/94C o T case = 150 C for BDW93B/94B for BDW93C/94C VCB = 80 V VCB = 100 V , mA mA 2 mA I CEO Collector Cut-off Current (I B = 0) for BDW93B/94B for BDW93C/94C , Sustaining Voltage (I B = 0) Max. I C = 100 mA for BDW93B/94B for BDW 93C/94C 80 100 V V
STMicroelectronics
Original
BDW93C/94C

W93B

Abstract: darlington bd r Z 7 SGS-THOMSON " 7# BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BD W 93Band BDW 93C are silicon epitaxial-base NPN transistors in monolithic Darlington , switching applications. The com plementary PNP types are the BDW94, BDW94A, BDW94B and BDW 94C respectively. INTERNAL SCHEM ATIC DIAGRAM NPN PNP RiTyp. 10 K ii Typ. 150 £1 RiTyp. 10 k£2 FteTyp. 150 Î2 , < 25 °C Storage Temperature Junction Temperature NPN PNP* B D W 93 BDW 93A BDW 93B BD W 93C Unit B DW
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W93B darlington bd W9394 93B/94

bow 94c

Abstract: box 53c * 4 90 TO-220 BDW93C* NPN 100 100 12 1000 4* 4 90 TO-220 BDW 94C* PNP 100 100 12 1000 4* 4 90 TO , - @ § Q Q_ PACKAGE BD 675A NPN 45 45 4 750 2.8 2 40 TO-126 BD 676A PNP 45 45 4 750 2.8 2 40 TO-126 BD 677 NPN 60 60 4 750 2.5 1.5 40 TO-126 BD 678 PNP 60 60 4 750 2.5 1.5 40 TO-126 BD 677A NPN 60 60 4 750 2.8 2 40 TO-126 BD 678A PNP 60 60 4 750 2.8 2 40 TO-126 BD 679 NPN 80 80 4 750 2.5 1.5 40 TO-126 BD 680 PNP 80 80 4 750 2.5 1.5 40 TO-126 BD 679A NPN 80 80 4 750 2.8 2 40 TO-126 BD 680A PNP 80 80
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BDW23 bow 94c box 53c BOX 53C IC CSI 24C bdx 679 BD NPN transistors

BDW94

Abstract: BDW94C * Monolithic Construction with Built-in Base-Emitter Shunt Resistor NPN PNP BDW93 BDW94 BDW93A BDW94A , 0.55 M 2.48 2.98 O 3.70 3.90 BDW93,A,B,C NPN I BDW94,A,B,C PNP ELECTRICAL CHARACTERISTICS (Tc = 25 , , Duty Cycle ^ 2.0% BDW93 Series NPN BDW94 Series PNP BDW93,A,B,C NPN I BDW94,A,B,C PNP < i-z 111 S 6 3 o £ e< a O o NPN BDW93,A,B,C Ic-Vbe vrc «3V 25°C To , - o 1.0 1 O o 0.5 _o 0.2 0.1 NPN BDW93.A / PNPBD\A/94,A ACTIVE-REGION SAFE OPERATING AREA
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NA42 transistor

Abstract: NA42U SENICOND {DISCRETE} äfl D E ^ b S D 1 1 3 D Doassti NA41(NPN), NA42(PNP) 3 National Semiconductor N A T L S E M I C O N D , (D I S C R E T E ) 28C 35569 T -Ï3 - o 1 1 NA41(NPN , information " 1 " fo r NPN - P O LA R IT Y " 2 " fo r PNP , Saturation Voltage Collector-Emitter Saturation Voltage Collector Output Capacitance NPN types PNP types , with hpatsink shown below permits about 8.7 Watts Power Dissipation and 0 c a = 9.4°C/W. 0.05 inch
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NA42U NA42 transistor NA41 pnp 557 16AL NA42 T0-126 T0-22 T0-220 S0113D T-32-P NB021EY

93c100

Abstract: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS â'¢ C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD W 93A 60 V : BD W 93B 80 V : B D W 93C 100 V 45 V : BD W 93A 60 V : BD W 93B , * Parallel Diode Forward Voltage 1.8 4 V BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR DC
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93c100
Abstract: r Z 7 SG S-TH O M SO N ^ 7 # &W^@lLl(§ir[RMO(gS BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BDW93Band BDW93C are silicon epitaxial-base NPN transistors in , lu e Sym bol P a r a m e te r NPN PNP* VcBO C ollecto r-b a se V oltage VcEO C o , n it B D W 94 B D W 94A B D W 94B B D W 94C 45 60 80 100 V 45 60 80 100 , , BDW94C). DC Current Gain (NPN types). Collector-emitter Saturation Voltage (NPN types). ter -
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93/A/B/C-BDW 94/A/B/C 7T2T237

dw94c

Abstract: PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE , NPN power transistor in monolithic Darlington configuration mounted in Jedec T0-220 plastic package , a ra m e te r V a lu e NPN PNP V CBO C o lle c to r-B a s e V o lta g e V CEO C o lle c to r-E m itte r V o lta g e (I b = 0) (Ie = 0) B D W 9 4B BD W 94C 80 100 V , Current Gain (NPN types) Collector Emitter Saturation Voltage (NPN types) DC Transconductance (NPN
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dw94c BDW93C/B DW94B/B DW94C

capacitor discharge ignition

Abstract: NB313Y ETE) 28C 3 5 5 7 7 J 3 - / / D V/WX National MM Semiconductor NA61 (NPN) 4 .5 A m p c o m p , tio n POLARITY "1 " for NPN " 2 " for PNP NA6 XX L -PACKAGE/LEAD CODE refer to [T , Voltage DC Current Gain Collector Output Capacitance NPN types PNP types CONDITIONS l c = 10m A , R = , permits about 10 Watts power dissipation and Oc a = 9.4°C/W. 0.05 Inch dumlnlum shnt Mount transistor , NA61(NPN), NA62(PNP) |~8~| ty p ic a l a p p lic a tio n s t> 2 > -t 9 lOiiF Q1 Q2 Q3 Q4 QS
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NB022EY NB313Y NA61W capacitor discharge ignition NB111 nb121 NA61 003SS77 L501130 003SS NB123EY NR001E

NA51 transistor

Abstract: na52 transistor , (DISCRETE) 28C 35573 - f 3 3 - D CL CÎ in < Z CT1 National ÉSA Semiconductor NA51 (NPN , information " 1 " for NPN · POLARITY "2" for PNP N A 5 XX L PACKAGE/LEAD CODE refer to m 7-24 , Voltage . 1 Collector-Emitter Saturation Voltage DC Current Gain Collector Output Capacitance . NPN types , -220 packages used «vith. heatsink shown below permits about 9.2 Watts power dissipation and O c a = 9.4°C/W , 6501130 NATL v ? v ? £ SEMICOND, (DISCRETE) 28C 35576 D 4A51(NPN), NA52(PNP) 8
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NB112EY NA52W NA51W NA52U NA51 transistor na52 transistor BV 726 C 1 Converter NA52W pnp BV 726 C Converter S0113Q NB122EY NB312E NB322E

audio power amplifier 500 watt

Abstract: 3a npn to126 transistor NATL SEMICOND {DISCRETE} ~E0 DE~J t .5 113 0 0G3SSfll f l 6501130 a NATL SEMICOND, (D ISCRETE) 28C 35561 D z a c i h< National Semiconductor NA71 (NPN) NA7 2 (PNP) ^ , information "1" for NPN -POLARITY -.y- for PNP r NA7XX 7-32 -PACKAGE/LEAD CODE refer to [T , Voltage DC Current Gain Collector Ouput Capacitance NPN types PNP types ^ S - v f t / SYMBOL , heatsink shown below permits about 10 Watts power dissipation and B q a " 9.4°C/W. t Mll- JSi tiS
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audio power amplifier 500 watt 3a npn to126 transistor D03SS NB113EY NB111EY NB121EY NB323Y NA72W

A6275EA

Abstract: WP-030-1A 8-bit CMOS shift register, accompanying data latches, and eight npn constant-current sink drivers , 2.5 2.0 SUFFIX 'A', R JA = 60°C/W 1.5 1.0 SUFFIX 'LW', R 0.5 0 25 JA = 94°C , = 94°C/W 20 0 100 0 20 DUTY CYCLE IN PER CENT 40 60 80 Dwg. GP , +50°C VDD = 5 V RJA = 94°C/W 20 0 0 20 40 60 80 100 DUTY CYCLE IN PER CENT , VCE = 1 V 80 VCE = 2 V 60 VCE = 3 V VCE = 4 V 40 TA = +85°C VDD = 5 V RJA = 94°C/W
Allegro MicroSystems
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A6275ELW A6275EA A6277EA A6277ELW A6276EA WP-030-1A A6275SLW-T A6275SLWTR-T 200D A6275EA-T MA-001-16A

A6275EA

Abstract: TB62705CP npn constantcurrent sink drivers. Except for package style and allowable package power dissipation , 25 JA = 94°C/W 50 75 100 125 AMBIENT TEMPERATURE IN ° C 150 Dwg. GP , VCE = 2 V 80 VCE = 3 V 60 VCE = 4 V 40 TA = +25°C VDD = 5 V RJA = 94°C/W 20 0 , -062-3 www.allegromicro.com VCE = 2 V 80 VCE = 3 V 60 VCE = 4 V 40 TA = +50°C VDD = 5 V RJA = 94°C/W 20 , VCE = 4 V 40 TA = +85°C VDD = 5 V RJA = 94°C/W 20 0 100 0 20 DUTY CYCLE IN
Allegro MicroSystems
Original
A6276ELW TB62705CP 200B gp061 GP-062A PP-029-10 MA-008-16A

A6275

Abstract: 200F NPN constant-current sink drivers. The CMOS shift register and latches allow direct interfacing , 20 T A = +25°C V DD = 5 V R JA = 94°C/W 20 40 60 80 100 0 0 20 DUTY , = 5 V R JA = 94°C/W 20 0 0 0 20 40 60 80 100 DUTY CYCLE IN PER CENT , V DD = 5 V R JA = 60°C/W 20 0 0 20 T A = +85°C V DD = 5 V R JA = 94°C/W 20 40
Allegro MicroSystems
Original
A6275 A6277 A6276 200F A6275ELWTR-T SOIC127P1030X265-16M
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