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Part Manufacturer Description Datasheet BUY
CP2725AC48TEZ-FB GE Critical Power CP2725AC48TEZ-FB Compact Power Line High Efficiency Rectifier, Input: 100-120/220-240 Vac; Default output: 48Vdc; 5 Vdc @ 4W visit GE Critical Power
CP2000AC48TEZ-FB GE Critical Power CP2000AC48TEZ-FB Compact Power Line High Efficiency Rectifier, Input: 100-120/220-240 Vac; Output: 2250W @ 52Vdc; 5 Vdc @ 4W visit GE Critical Power
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

NPN Transistor 600V TO-220

Catalog Datasheet MFG & Type PDF Document Tags

IRF9210

Abstract: darlington NPN 600V 8a transistor , 40W, N-CH, TO-220 FET, 600V, 3.OR, 4A, 75W N-CH, TO-220 PAGE 280 280 285 285 285 285 295 295 300 , , 125W N-CH, TO-220 USE SSP4N70 FET, 600V, 1 8R, 6A, 125W N-CH, TO-220 USE SSP6N60 FET, 600V, 12R, 1A , PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR MRTNO. 2N3904 2N3906 2N4401 2N4403 , KSH3055-TF KSH3055-I KSH29C-TF KSH29C-I KSH30C-TF KSH30C-I KSH44H11-TF KSH44H11-I DESCRIPTION TR, NPN, GP, 60V, TO-92 TR, PNP, GP, 40V, TO-92 TR, NPN, GP, 60V, TO-92 TR, PNP, GP, 40V, TO-92 TR, PNP, AMP, 50V
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KSH117-1 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10

2N 326 Transistor

Abstract: transistor ESM 3004 SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH i \yCEO (sus) 200V 400V 500V 600V 700V Case \VCEX 350V 600V 600V 1000V 1000V , A ESM 4017 power transistor and darlington for TV applications selector guide guide de sà , 900V 130CIV 1500V 1700V Case 10 A BU 109 BU 109 D TO-3 BU 109 P BU 109DP TO-220 8A BU 189 BU 184 TO-220 BU 926 BU 926A TOP-3 7A BU 104 BU 104D TO-3 BU 407 BU 407 D BU
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2N2815 2N 326 Transistor transistor ESM 3004 DARLINGTON ESM 30 npn 1000V 100a ESM4016 transistor ESM 2060T 104DP 1000T 2060T CB-69 CB-70

BZX85C12V

Abstract: TOSHIBA 2N3055 47-2222 47-2224 47-2228 47-2230 Zener voltage V 43 47 51 56 62 91 120 160 180 200 220 270 Device BZT03C43 , 400V 600V 800V 1000V VRRM 50V 100V 200V 400V 600V 800V 1000V Order code 1+ 100+ 1000+ DC A range , 400V 600V 1000V VRRM 100V 200V 400V 600V 1000V Order code 1+ 100+ 1000+ 5000+ Type Silicon schottky , supplies, high frequency DC-DC converters and transistor circuits. These devices feature very low conduction losses and a maximum reverse recovery time of 35nS. Housed in DO-15, DO-201AD or TO-220 packages
Rapid Electronics Catalog
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2SA1085E 2SC2547E BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V T0202-3 1N914 1N4001 1N4002 1N4003 1N4004

MJE13005

Abstract: MJE13005 TRANSISTOR DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high , BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE VCE=600V, VBE(OFF)=1.5V (MJE13004) VCE=600V, VBE(OFF)=1.5V, TC=100°C (MJE13004) VCE=700V, VBE(OFF)=1.5V (MJE13005 , 0.5 0.6 1.0 1.0 1.2 1.6 1.5 60 40 (SEE REVERSE SIDE) R0 MJE13004 / MJE13005 NPN
Central Semiconductor
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MJE13005 TRANSISTOR MJE13005 2 MJE-13005 equivalent mje13005 MJE13005-1 transistor mje13005

ulb124

Abstract: NPN Transistor 600V TO-220 UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching , E B C E Packing Tube Tube 1 of 4 QW-R213-013.D ULB124 NPN SILICON TRANSISTOR , 10 100 Collector Current (mA) 3 of 4 QW-R213-013.D ULB124 NPN SILICON TRANSISTOR , Voltage * High Reliability 1 TO-220 ORDERING INFORMATION Ordering Number Lead Free Halogen
Unisonic Technologies
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NPN Transistor 600V TO-220 ULB124G ULB124L- ULB124G-

NPN Transistor 600V

Abstract: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN EPITAXIAL PLANAR TRANSISTOR 1 NPN SILICON TRANSISTOR , Emitter-Base Voltage NPN SILICON TRANSISTOR RATINGS UNIT 600 V 400 V 8 V DC 2 A Collector Current IC , www.unisonic.com.tw 3 of 4 QW-R213-013.F ULB124 TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR , Voltage * High Reliability 1 TO-220 ORDERING INFORMATION Ordering Number Lead Free Halogen , ULB124G-xx-T60-K Package TO-220 TO-251 TO-126 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Bulk
Unisonic Technologies
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NPN Transistor 600V
Abstract: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching , of 4 QW-R213-013.C ULB124 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA , 28 ~ 37 B6 33 ~ 40 2 of 4 QW-R213-013.C ULB124 NPN SILICON TRANSISTOR TYPICAL , (mA) 3 of 4 QW-R213-013.C ULB124 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont Unisonic Technologies
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ULB124

Abstract: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN EPITAXIAL PLANAR TRANSISTOR 1 NPN SILICON TRANSISTOR , www.unisonic.com.tw 3 of 4 QW-R213-013.E ULB124 TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR , Voltage * High Reliability 1 TO-220 ORDERING INFORMATION Ordering Number Lead Free Halogen , ULB124G-xx-T60-T Package TO-220 TO-251 TO-126 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube , MAXIMUM RATING (Ta=25°C) SYMBOL VCBO VCEO VEBO DC Pulse DC Pulse TO-220 TO-251 TO-126 IC IB PARAMETER
Unisonic Technologies
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Abstract: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1  TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed , Packing Tube Tube Bulk 1 of 4 QW-R213-013.G ULB124  NPN SILICON TRANSISTOR ABSOLUTE , B6 33 ~ 40 2 of 4 QW-R213-013.G ULB124  NPN SILICON TRANSISTOR TYPICAL , (mA) 3 of 4 QW-R213-013.G ULB124  NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont Unisonic Technologies
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12V to 300V dc dc converter step-up

Abstract: BL3208 Video Infrared Remote Control Lighting/Lamp Driver Smoke Detector Discrete Devices NPN Silicon Epitaxial RF Transistor NPN Silicon Photoelectric Cell Silicon PIN PhotodiodePIN Varicapacitance Diode , Ballast Control E-Starter BL9150 BLC149 BLH3355 BLH3356 BL3356B IR Control RF Transistor RF Transistor RF Transistor BLV740 BLV830 BLV840 BM22P14 BM22P64 MOSFET MOSFET MOSFET MCU MCU BL1240 / BL59A10 Smoke Detector BL8305A Ballast Control BLH4083 RF Transistor
Shanghai Belling
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BL0306 BL35P12 12V to 300V dc dc converter step-up BL3208 12v 10A dc driver motor control mosfet 400V to 6V DC Regulator TO 220 Package BL0509 BL0510 BL0921 BL0929 BL0930

NPN Transistor 600V

Abstract: l13024 UNISONIC TECHNOLOGIES CO., LTD L13024 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC L13024 is designed for high voltage, high speed switching inductive , NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25) PARAMETER Collector-Base Voltage , QW-R213-013.B L13024 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Saturation Voltage vs , NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for
Unisonic Technologies
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L13024L L13024G L13024-TA3-T L13024-TM3-T L13024L-TA3-T L13024L-TM3-T

Flyback Transformers SANYO TV

Abstract: RD1004 ] Type No. High voltage switching transistor Charger SW Tr(MOS or Tr + MOS) AC Input Startup , Mobile Equipment [Bipolar Transistor Use Example] Recommended MOSFETs Continued from preceding page , ] Push-Pull [Bipolar Transistor Use Example] Half-Bridge Full-Bridge Self-Excitation Type VIN , = 70mA NPN TR IB NPN TR PNP TR VCE= at least 1V PNP TR Nch FET Flash Circuit IGBTs , ] IC [A] 50 0.5 50 1 to 5 60 3 100 1 NPN PNP NPN PNP NPN PNP NPN PNP
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Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent CDMA2000 MCH3377 VEC2818 VEC2822 ECH8652 ECH8654

13005 2 transistor

Abstract: npn silicon transistor 13005 application note Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching , =2% µ CD13005Rev_2 300103E Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless , Collector Cutoff Current ICBO - - Emitter Cutoff Current IEBO VCB=600V, IE=0 VCB=600V, IE
Continental Device India
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13005 2 transistor npn silicon transistor 13005 application note 13005 2 13005 13005 TRANSISTOR transistor 13005 C-120 CD13005R

13005 2 transistor

Abstract: transistor sr 13005 Limited Data Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package , Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting , IEBO VCB=600V, IE=0 VCB=600V, IE=0, Tc=100ºC VEB=9V, IC=0 - - 1.0 5.0 1.0 mA mA , Data Sheet Page 2 of 4 CD13005 TO-220 Plastic Package TO-220 Plastic Package B C E DIM
Continental Device India
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transistor sr 13005 transistor d 13005 13005 A transistor

transistor 13005

Abstract: 13005 2 transistor Data Sheet Page 1 of 4 NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package , Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting , IEBO VCB=600V, IE=0 VCB=600V, IE=0, Tc=100ºC VEB=9V, IC=0 - - 1.0 5.0 1.0 mA mA mA , Data Sheet Page 2 of 4 µs CD13005 TO-220 Plastic Package TO-220 Plastic Package B C E
Continental Device India
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CDA marking IC 13005 applications 13005f

13005a

Abstract: transistor 13005a NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching , V Collector Cut Off Current ICBO - - Emitter Cut Off Current IEBO VCB=600V, IE=0 VCB=600V, IE=0, Tc=100ºC VEB=9V, IC=0 - - 1.0 5.0 1.0 mA mA mA *Pulse Test:- PW
Continental Device India
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13005a transistor 13005a 13005B transistor 13005B 13005A TRANSISTOR transistor 13005a data sheet 260404E

transistor E 13005

Abstract: sr 13005 Manufacturer CD13005 NPN SILICON POWER TRANSISTOR TO-220 Plastic Package Applications Suitable , CD13005 NPN SILICON POWER TRANSISTOR TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , IEBO TEST CONDITION MIN IC=1mA, IE=0 600 IC=10mA, IB=0 400 VCB=600V, IE=0 VCB=600V, IE=0,TC , =2% Continental Device India Limited Data Sheet Page 2 of 4 CD13005 TO-220 Plastic Package TO-220 , . Collector 3 TO-220 Tube Packing 536.00 Label End Pin ±1.5 13.74 32.85 DEVICE NAME Sr
Continental Device India
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transistor E 13005 sr 13005 13005 NPN Transistor 13005 TRANSISTOR npn CDIL 13005

transistor ESM 3004

Abstract: ESM3004 SUPERSWITCH transistor TO-220 AB selector guide guide de sélection transistors TO-220 AB , transistor TO-83 selector guide guide de sélection transistors forte puissance TO-83 SUPERSWITCH \ VcEO \VCEX â c (sat) 100V 200V 150V 200V 200V 350V 400V 500V-600V 500V 600V 600V 1000V 700V 1000V Case 150 , (sat) / «C ! "B *d+tr ts tf fr Case cont â'¢VCE =I^V typ* NPN sat* min I max 1 max max , CB 263 npn switching transistors : military applications transistors de commutation npn
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ESM3004 ESM 3004 transistor WLM transistor ESM 30 transistor ESM 3001 BUV36

darlington NPN 1000V 8a transistor

Abstract: NPN Transistor 600V TO-220 SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH i \yCEO (sus) 200V 400V 500V 600V 700V Case \VCEX 350V 600V 600V 1000V 1000V , A ESM 4017 power transistor and darlington for TV applications selector guide guide de sà , 900V 130CIV 1500V 1700V Case 10 A BU 109 BU 109 D TO-3 BU 109 P BU 109DP TO-220 8A BU 189 BU 184 TO-220 BU 926 BU 926A TOP-3 7A BU 104 BU 104D TO-3 BU 407 BU 407 D BU
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darlington NPN 1000V 8a transistor transistor BU 104 darlington NPN 600V 8a pnp transistor 800v transistor ESM 16 transistor 406 specification CB-117 BUW48 BUW49 BUX70 CB-244 CB-285

vbe 12v, vce 600v NPN Transistor

Abstract: NPN Transistor 600V 0,2A NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367 HIGH VOLTAGE AND HIGH RELIABILITY TO-220 , - 0.5 V - V pF uS uS NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367 , - V Collector Cutoff Current ICBO VCB = 1,600V, IE = 0 - - 20 uA Emitter , R Junction to Ambient R Max 1.25 62.5 Unit &/w KSC5367 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR Samsung Electronics
Samsung Electronics
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vbe 12v, vce 600v NPN Transistor NPN Transistor 600V 0,2A
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