NP88N055CHE NP88N055DHE NP88N055EHE D14148EJ2V0DS00 MP-25 MP-25ZJ

MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE NP88N055CHE, NP88N055DHE NP88N055DHE, NP88N055EHE NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER TO-262 NP88N055EHE NP88N055EHE FEATURES TO-220AB NP88N055DHE NP88N055DHE applications. PACKAGE NP88N055CHE NP88N055CHE Transistor designed for high current switching TO-263 · Channel temperature 175 degree rated · Super low on-state resistance RDS(on) = 5.3 m MAX. (VGS = 10 V, ID = 44 A) · Low Ciss : Ciss = 7600 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Note1 ID(DC) ±88 A Drain Current (DC) ID(pulse) ±352 A Total Power Dissipation (TA = 25°C) PT 1.8 W Total Power Dissipation (TC = 25°C) PT 288 W Single Avalanche Current IAS 65 / 88 A Drain Current (Pulse) 5 Note2 Single Avalanche Energy Note3 EAS 422 / 15 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg 55 to +175 °C Notes 1. Package Limit = ± 75 A 2. PW 10 µs, Duty cycle 1 % 3. Starting Tch = 25°C, RG = 25 , VGS = 20 V0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 0.52 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14148EJ2V0DS00 D14148EJ2V0DS00 (2nd edition) Date Published September 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1999 NP88N055CHE NP88N055CHE, NP88N055DHE NP88N055DHE, NP88N055EHE NP88N055EHE ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 4.2 5.3 m 4.0 V Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 44 A Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 3.0 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 44 A 30 60 Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 25 V 7600 11400 pF Coss VGS = 0 V 1100 1700 pF 480 870 pF ID = 44 A 150 330 ns VGS(on) = 10 V 1300 3300 ns 320 640 ns 290 730 ns 200 nC Output Capacitance Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time tf f = 1 MHz VDD = 28 V RG = 10 S Total Gate Charge QG ID = 88 A 130 Gate to Source Charge QGS VDD = 44 V 31 nC 49 nC IF = 88 A, VGS = 0 V 1.0 V trr IF = 88 A, VGS = 0 V 62 ns Qrr di/dt = 100 A/µs 120 nC Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time Reverse Recovery Charge VGS = 10 V TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL RG RG = 10 PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % IAS ID VGS 0 BVDSS ID VDS ID VDD Starting Tch = 1 µs Duty Cycle 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 0 10 % 10 % Wave Form RL VDD Preliminary Data Sheet D14148EJ2V0DS00 D14148EJ2V0DS00 td(on) tr ton td(off) tf toff NP88N055CHE NP88N055CHE, NP88N055DHE NP88N055DHE, NP88N055EHE NP88N055EHE PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25 MP-25) 2) TO-262 (MP-25 MP-25 Fin Cut) 4.8 MAX. 3.6±0.2 1.0±0.5 1.3±0.2 10.0 1 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 2 3 1.3±0.2 0.5±0.2 0.75±0.1 2.54 TYP. 1.3±0.2 2.8±0.2 2.54 TYP. 8.5±0.2 4 4.8 MAX. 4 15.5 MAX. 5.9 MIN. (10) 12.7 MIN. 3.0±0.3 10.6 MAX. 0.5±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ MP-25ZJ) EQUIVALENT CIRCUIT 4.8 MAX. (10.0) 1.3±0.2 4 5.7±0.4 8.5±0.2 1.0±0.5 Drain 1.4±0.2 0.7±0.2 2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 Remark Gate Body Diode ) .5R (0 ) .8R (0 0.5±0.2 Gate Protection Diode Source 1.Gate 2.Drain 3.Source 4.Fin (Drain) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Preliminary Data Sheet D14148EJ2V0DS00 D14148EJ2V0DS00 3 NP88N055CHE NP88N055CHE, NP88N055DHE NP88N055DHE, NP88N055EHE NP88N055EHE · The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. · No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. · NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. · Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. · While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. · NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8