NP22N055HLE NP22N055ILE D14136EJ1V0DS00

MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE NP22N055HLE, NP22N055ILE NP22N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Tran- PACKAGE TO-251(MP-3) NP22N055ILE NP22N055ILE FEATURES PART NUMBER NP22N055HLE NP22N055HLE sistors designed for high current switching applications. TO-252(MP-3Z) · Channel temperature 175 degree rated · Super low on-state resistance 5 RDS(on)1 = 37 m MAX. (VGS = 10 V, ID = 11 A) 5 RDS(on)2 = 45 m MAX. (VGS = 5 V, ID = 11 A) 5 · Low Ciss : Ciss = 730 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±22 A ID(pulse) ±88 A Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25°C) PT 1.2 W 5 Total Power Dissipation (TC = 25°C) PT 45 W 5 Single Avalanche Current Note2 IAS 14 / 5 A EAS 19 / 25 mJ 5 Single Avalanche Energy Note2 Channel Temperature Tch 175 °C Storage Temperature Tstg 55 to +175 °C Notes 1. PW 10 µs, Duty cycle 1 % 2. Starting Tch = 25°C, RG = 25 , VGS = 20 V0 V THERMAL RESISTANCE 5 Channel to Case Channel to Ambient Rth(ch-C) 3.33 °C/W Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14136EJ1V0DS00 D14136EJ1V0DS00 (1st edition) Date Published October 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1999 NP22N055HLE NP22N055HLE, NP22N055ILE NP22N055ILE 5 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 11 A 29 37 m RDS(on)2 VGS = 5 V, ID = 11 A 35 45 m RDS(on)3 VGS = 4.5 V, ID = 11 A 37 51 m Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 11 A 5 10 Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz 730 1100 pF Output Capacitance Coss 110 170 pF Reverse Transfer Capacitance Crss 52 95 pF Turn-on Delay Time td(on) ID = 11 A, VGS(on) = 10 V, VDD = 28 V, 17 37 ns RG = 10 210 530 ns td(off) 44 88 ns tf 42 110 ns Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge S QG1 ID = 22 A, VDD = 44 V, VGS = 10 V 15 23 nC QG2 ID = 22 A, VDD = 44 V, VGS = 5 V 9 14 nC Gate to Source Charge QGS 3 nC Gate to Drain Charge QGD 4.5 nC IF = 22 A, VGS = 0 V 1.0 V IF = 22 A, VGS = 0 V, di/dt = 100A/µs 37 ns 45 nC Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 VGS RL RG RG = 10 PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID VGS 0 ID VDS ID VDD Starting Tch = 1 µs Duty Cycle 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 0 10 % 10 % Wave Form RL VDD Preliminary Data Sheet D14136EJ1V0DS00 D14136EJ1V0DS00 td(on) tr ton td(off) tf toff NP22N055HLE NP22N055HLE, NP22N055ILE NP22N055ILE 5 PACKAGE DRAWINGS (Unit: mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 2.3±0.2 0.5+0.2 -0.1 0.5±0.1 10.0 MAX. 1.1±0.2 2.3 TYP. 0.9 MAX. 2.3 TYP. 0.8 MAX. 0.7 TYP. 2.0 MIN. 0.8 TYP. 0.5+0.2 -0.1 0.8 TYP. 2.3 TYP. 0.75 TYP. 2.3 TYP. 5.5±0.2 4.3 MAX. 5.5±0.2 7.0 MIN. 13.7 MIN. 1.6±0.2 5.0±0.2 1.1±0.2 2.3±0.2 6.5±0.2 1.0 MIN. 1.8 TYP. 0.5±0.1 1.5+0.2 -0.1 5.0±0.2 1.5+0.2 -0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Preliminary Data Sheet D14136EJ1V0DS00 D14136EJ1V0DS00 3 NP22N055HLE NP22N055HLE, NP22N055ILE NP22N055ILE · The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. · No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. · NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. · Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. · While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. · NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8