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Part : CIBA201209NJ260PNE Supplier : Samsung Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0270 Price Each : $0.0295
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Part : LNJ261L3A.A3 Supplier : Panasonic Electronic Components Manufacturer : Bristol Electronics Stock : 19,940 Best Price : $0.0506 Price Each : $0.3750
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NJ26A

Catalog Datasheet MFG & Type PDF Document Tags

2n4416 transistor die

Abstract: 2N4416 Databook.fxp 1/13/99 2:09 PM Page F-10 F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate , +175°C S-D Devices in this Databook based on the NJ26A Process. S-D Datasheet 2N4416 , " Substrate is also Gate. At 25°C free air temperature: NJ26A Process Static Electrical , -11 F-11 01/99 NJ26A Process Silicon Junction Field-Effect Transistor Drain Current as a
InterFET
Original
2N4416A 2n4416 transistor die 2n4416 transistor all transistor databook

2n5485 equivalent transistor

Abstract: J305 equivalent transistor Databook.fxp 1/13/99 2:09 PM Page F-8 F-8 01/99 NJ26 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C ­ 65°C to +175°C S-D Devices in this Databook based on the NJ26A Process. S-D Datasheet 2N4416, 2N4416A 2N5484, 2N5485 2N5486 J304, J305 VCR11N G Die Size = 0.016" X 0.016" All Bond Pads =
InterFET
Original
2n5485 equivalent transistor J305 equivalent transistor OF TRANSISTOR 2N5485 DATASHEET OF TRANSISTOR 2N5485 j305 J304