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NJ26A

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Abstract: Databook.fxp 1/13/99 2:09 PM Page F-10 F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate , +175°C S-D Devices in this Databook based on the NJ26A Process. S-D Datasheet 2N4416 , " Substrate is also Gate. At 25°C free air temperature: NJ26A Process Static Electrical , -11 F-11 01/99 NJ26A Process Silicon Junction Field-Effect Transistor Drain Current as a InterFET
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2N4416A 2n4416 transistor die 2n4416 transistor all transistor databook
Abstract: Databook.fxp 1/13/99 2:09 PM Page F-8 F-8 01/99 NJ26 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C ­ 65°C to +175°C S-D Devices in this Databook based on the NJ26A Process. S-D Datasheet 2N4416, 2N4416A 2N5484, 2N5485 2N5486 J304, J305 VCR11N G Die Size = 0.016" X 0.016" All Bond Pads = InterFET
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2n5485 equivalent transistor J305 equivalent transistor OF TRANSISTOR 2N5485 DATASHEET OF TRANSISTOR 2N5485 j305 J304