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Part : NESG3033M14-A Supplier : Renesas Electronics Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : NESG3033M14-T3A Supplier : Renesas Electronics Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
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NESG3033M14 Datasheet

Part Manufacturer Description PDF Type
NESG3033M14 California Eastern Laboratories NPN SILICON GERMANIUM RF TRANSISTOR Original
NESG3033M14-A California Eastern Laboratories NPN SILICON GERMANIUM RF TRANSISTOR Original
NESG3033M14-T3 California Eastern Laboratories NPN SILICON GERMANIUM RF TRANSISTOR Original
NESG3033M14-T3-A California Eastern Laboratories NPN SILICON GERMANIUM RF TRANSISTOR Original

NESG3033M14

Catalog Datasheet MFG & Type PDF Document Tags

NESG3033M14

Abstract: MCR01MZPJ5R6 NESG3032M14. ORDERING INFORMATION Part Number NESG3033M14 Order Number NESG3033M14-A Package 4 , (Collector), Pin 4 (NC) face the perforation side of the tape · 8 mm wide embossed taping NESG3033M14-T3 NESG3033M14-T3-A Remark To order evaluation samples, please contact your nearby sales office. Unit sample , , High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES · The NESG3033M14 is an ideal , , IC = 15 mA, f = 2.0 GHz NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz NESG3033M14
Renesas Technology
Original
MCR01MZPJ5R6 R09DS0049EJ0300
Abstract: -pin lead-less minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number NESG3033M14 Order Number NESG3033M14-A Package 4-pin lead-less minimold (M14, 1208 PKG) NESG3033M14-T3 NESG3033M14-T3-A (Pb-Free) Note , DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW , specifying it in the "Find what:" field. NESG3033M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter , Sheet PU10640EJ02V0DS NESG3033M14 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC NEC
Original
Abstract: ) â'¢ Pin 1 (Collector), Pin 4 (NC) face the (Pb-Free) NESG3033M14-T3 NESG3033M14-T3-A , Part Number Order Number NESG3033M14 Package NESG3033M14-A Quantity Supplying Form , Preliminary Data Sheet NESG3033M14 R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 NPN SiGe RF , '¢ The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 , Page 1 of 14 NESG3033M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Symbol MIN Renesas Electronics
Original

GRM155B11H102KA01

Abstract: AML1005H3N9STS 2.0 GHz SiGe HBT UHS3fmax = 110 GHz NESG3032M14 ESD 4 M14, 1208 PKG NESG3033M14 M14, 1208 PKG NESG3033M14-T3-A 4 50 mm 8 NESG3033M14-A NESG3033M14-T3 , NPN RF NPN Silicon Germanium RF Transistor NESG3033M14 NPN SiGe RF 4 M14, 1208 PKG , ) PU10640JJ02V0DS 2 May 2007 NS ""PDF 2006, 2007 NESG3033M14 TA = 25°C MIN , Rb Bias Choke 2 PU10640JJ02V0DS NESG3033M14 TA = 25°C MIN
NEC
Original
GRM155B11H102KA01 AML1005H5N6STS AML1005H3N9STS FDK 1575 10640JJ02V0DS GRM1552C1H270JZ01 GRM1552C1H6R0JZ01
Abstract: , 1208 PKG) R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 ORDERING INFORMATION Part Number NESG3033M14 Order Number NESG3033M14-A Package 4-pin lead-less minimold (M14, 1208 PKG) NESG3033M14-T3 NESG3033M14-T3-A (Pb-Free) Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form · 8 mm wide embossed taping · Pin , Preliminary Data Sheet NESG3033M14 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) FEATURES · The NESG3033M14 is an ideal choice for low Renesas Electronics
Original

NESG3033M14

Abstract: -pin lead-less minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number NESG3033M14 Order Number NESG3033M14-A Package 4-pin lead-less minimold (M14, 1208 PKG) NESG3033M14-T3 NESG3033M14-T3-A (Pb-Free) Note , DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW , (1st edition) Date Published September 2006 NS CP(K) Printed in Japan 2006 NESG3033M14 , deterioration. Rb Bias Choke 2 Data Sheet PU10640EJ01V0DS NESG3033M14 ELECTRICAL
NEC
Original

NEC ROHS COMPLIANT

Abstract: NEC PART NUMBER MARKING ) NESG3033M14-T3 NESG3033M14-T3-A perforation side of the tape 10 kpcs/reel Remark To order evaluation , minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number Order Number NESG3033M14 Package NESG3033M14-A Quantity Supplying Form 4-pin lead-less minimold 50 pcs · 8 mm wide embossed taping , NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE , ) 2006 NESG3033M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Symbol MIN. TYP
California Eastern Laboratories
Original
NEC ROHS COMPLIANT NEC PART NUMBER MARKING

1208 marking

Abstract: NESG3033M14-T3 NESG3033M14-T3-A Remark To order evaluation samples, contact your nearby sales office. Unit , , 1208 PKG) ORDERING INFORMATION Part Number NESG3033M14 Order Number NESG3033M14-A Package 4 , NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN , Document No. PU10640EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) NESG3033M14 , deterioration. 2 Data Sheet PU10640EJ01V0DS NESG3033M14 ELECTRICAL CHARACTERISTICS (T A = +25 C
California Eastern Laboratories
Original
1208 marking

NESG3033M14-T3

Abstract: GRM1552C1H270J ) NESG3033M14-T3 NESG3033M14-T3-A Note perforation side of the tape 10 kpcs/reel Note With regards to , minimold (M14, 1208 PKG) ORDERING INFORMATION Part Number Order Number NESG3033M14 Package NESG3033M14-A Quantity Supplying Form 4-pin lead-less minimold 50 pcs · 8 mm wide embossed taping , . DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE , "Find what:" field. 2006, 2007 NESG3033M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter
NEC
Original
GRM1552C1H270J GRM1552C1H MCR01MZPJ5R1 GRM155B11H

SMD transistor M05

Abstract: smd TRANSISTOR code m05 Transistor: 0.6 dB NF, 17.5 dB Gain NESG3033M14 SiGe RFIC & Bipolar Transistor: 0.6 dB NF, 17.5 dB Gain , , Wi-Fi, Cordless Phone 2.4 GHz NESG2031M05 NESG3031M05 NESG3032M14 NESG3033M14 NESG2031M05 NESG3031M05 NESG3032M14 NESG3033M14 - NESG2031M05 NESG2101M05 NESG3031M05 NESG4030M14 , M14 NESG3033M14 SiGe Transistor 0.6 @ 2.0 GHz 17.5 @ 2.0 GHz +12.5 M14 , NESG3032M14 SiGe HBT, 0.6 dB Noise Figure, 17.5 dB Gain @ 2.0 GHz NESG3033M14 SiGe HBT, 0.6 dB Noise
California Eastern Laboratories
Original
SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd 10/2M

SMD M05 sot23

Abstract: A3 smd sot-343 4 4 NESG3032M14 SiGe Bipolar Transistor: 0.6dB NF, 17.5 dB Gain 4 4 NESG3033M14 , NESG3032M14 NESG3033M14 NESG2031M05 NESG3031M05 NESG3032M14 NESG3033M14 WLAN, Wi-Fi, Cordless Phone , NESG3033M14 SiGe Transistor 0.6 @ 2.0 GHz 17.5 @ 2.0 GHz +12.5 M14 NESG7030M04 SiGe:C , NESG3033M14 SiGe HBT, 0.6 dB Noise Figure, 17.5 dB Gain @ 2.0 GHz, built-in ESD protection NE3509M04 , 20.5 â'" 300 35 M14 Pkg: 4 pin low profile, recessed leads NESG3033M14 2.0 2 6
California Eastern Laboratories
Original
SMD M05 sot23 A3 smd sot-343 nE352 NE5531 2013/4M

ic isl 887

Abstract: 2SC5508 2 Tr. RF 1st 2nd PLL NE3508M04 NE3509M04 NE3509M14 NESG3032M14 NESG3033M14 , µPC2749TB NESG3033M14 µPC8230TU µPC8231TK µPC8232T5N µPC8233TK µPC8236T6N µPC8240T6N µPB1007K 1st
Renesas Electronics
Original
2SC5508 ic isl 887 NE3514 SW SPDT NE3515S02 PG2179 NE662M04 NESG2031M16 NE55410GR NEM090303M-28 NEM090603M-28

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 SiGe:C MMIC NESG3032M14 SiGe HBT NESG3033M14 SiGe HBT 0.6 0.4 NE662M04 (2SC5508) Si-BJT , 4L2MM NESG3033M14 L-Band LNA, GPS, etc., SiGe HBT with 2 6 2 000 NF = 0.6 dB@f = 2.0
NEC
Original
nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram marking code C1H mmic G0706 PX10727EJ02V0PF

UPC8236

Abstract: 2SC5508 Name NE3508M04 Feature GaAs HJ-FET NE3509M04 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU , NE3508M04 2SC5507 NE3509M04 NESG3032M14 2SC5508 NESG3033M14 µPC2749TB µPC8230TU µPC8231TK µPC8232T5N
NEC
Original
UPC8236 NE3512S02 digital tv tuner hjfet NESG240033 ANTENNA parabolic PX10020EJ39V0PF

2SC5508

Abstract: UPC3243 NE3509M04 NE3509M14 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU SiGe:C MMIC PC8231TK PC8232T5N , NE3509M04 2SC5508 NE3509M14 NESG3032M14 µPC2749TB NESG3033M14 µPC8230TU µPC8231TK µPC8232T5N
Renesas Electronics
Original
UPC3243 transistor 20107 NE3509 NE3517S03 UPC3240 NESG270034 R09CA0001EJ0300

UPC8236

Abstract: 2SC5508 NE3508M04 Feature GaAs HJ-FET NE3509M04 NE3509M14 NESG3032M14 SiGe Tr. NESG3033M14 PC8230TU , 1575.42 MHz BPF NE3508M04 2SC5507 NE3509M04 2SC5508 NE3509M14 NESG3032M14 µPC2749TB NESG3033M14
Renesas Electronics
Original
upg2406t6r 2SC3357/NE85634 CATV MODULATOR Microwave GaAs FET catalogue NE5510279A UPG2406T R09CA0001EJ0100 PX10020EJ42V0PF

mobile phone basic block diagram

Abstract: PG2158T5K SiGe Tr. NESG3033M14 PC8230TU SiGe:C MMIC PC8231TK PC8232T5N PC8233TK PC8236T6N PC8240T6N , NE3508M04 2SC5507 NE3509M04 2SC5508 NE3509M14 NESG3032M14 µPC2749TB NESG3033M14 µPC8230TU µPC8231TK
NEC
Original
mobile phone basic block diagram PG2158T5K microwave Duplexer UPG2156 pc2757tb 2sc3356 PX10020EJ41V0PF

FET marking code g5d

Abstract: PG2179TB NESG3033M14 SiGe HBT 0.6 0.4 NE662M04 (2SC5508) Si-BJT PC8232T5N SiGe:C MMIC 0.8 1.0 1.2 , LNA, GPS, etc., SiGe HBT 2 6 2 000 NF = 0.6 dB@f = 2.0 GHz 4L2MM NESG3033M14
Renesas Electronics
Original
PG2179TB marking code C3E SOT-89 marking code C1E mmic PG2163T5N sot-23 g6g PD5713TK R09CL0001EJ0100

SMD M05 sot

Abstract: NESG303100G , recessed leads NESG3033M14 2.0 2 6 0.6 17.5 3 20 20.5 - 300 35 M14
California Eastern Laboratories
Original
SMD M05 sot NESG303100G transistor NEC D 882 p m33 tf 130 H02 SOT-363 T6N 700 08/2M
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