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  1 - 6 of about 6 for NESG2101M16   
  Part Number Manufacturer   Description      
 1.   NESG2101M16  NESG2101M16 NEC Electronics   NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) 60.07 Kb  7 Pg.  
 2.   NESG2101M16  NESG2101M16 California Eastern Laboratories / NEC   HIGH FREQUENCY TRANSISTOR 189.9 Kb  3 Pg.  
 3.   NESG2101M16FB  NESG2101M16FB NEC Electronics   NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) 6-pin Lead-less Minimold (M16, 1208 Package) 60.07 Kb  7 Pg.  
 4.   NESG2101M16FB-T3  NESG2101M16FB-T3 NEC Electronics   NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) 6-pin Lead-less Minimold (M16, 1208 Package) 60.07 Kb  7 Pg.  
 5.   NESG2101M16-T3  NESG2101M16-T3 NEC Electronics   NPN SiGe high frequency transistor. 81.29 Kb  2 Pg.  
 6.   NESG2101M16-T3-A  NESG2101M16-T3-A California Eastern Laboratories / NEC   NPN SiGe HIGH FREQUENCY TRANSISTOR 189.89 Kb  3 Pg.  
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  1 - 3 of about 3+ for NESG2101M16   
1. Datasheet Text Contains NESG2101M16
81.29 Kb  •  2 Pages

Abstract: ... DESCRIPTION NEC's NESG2101M16 is fabricated using NEC� s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifi ers, medium ...

Labels: NESG2101M16

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2. Datasheet Text Contains NESG2101M16
189.92 Kb  •  3 Pages

Abstract: ... DESCRIPTION NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium ...

Labels: NESG2101M16, RoHS, Pb-Free

Datasheet

  
3. Datasheet Text Contains NESG2101M16
60.07 Kb  •  7 Pages

Abstract: ... NESG2101M16 50 pcs (Non reel) 8 mm wide embossed taping. NESG2101M16-T3 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape. Remark To order evaluation samples ...

Labels: NESG2101M16

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