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| Part Number | Manufacturer | Description | ||||||
| 1. |  NESG2046M33 |
NEC Electronics | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | 115.93 Kb | 3 Pg. | |||
| 2. | NESG2046M33 |
California Eastern Laboratories / NEC | NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | 247.47 Kb | 4 Pg. | |||
| 3. | NESG2046M33-A |
NEC Electronics | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | 115.93 Kb | 3 Pg. | |||
| 4. | NESG2046M33-A |
California Eastern Laboratories / NEC | NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | 247.47 Kb | 4 Pg. | |||
| 5. | NESG2046M33FB |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 3-pin Super Lead-less Minimold (M33, 0804 Package) | 29.03 Kb | 5 Pg. | |||
| 6. | NESG2046M33FB-T3 |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 3-pin Super Lead-less Minimold (M33, 0804 Package) | 29.03 Kb | 5 Pg. | |||
| 7. | NESG2046M33-T3-A |
NEC Electronics | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | 115.92 Kb | 3 Pg. | |||
| 8. | NESG2046M33-T3-A |
California Eastern Laboratories / NEC | NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION | 247.47 Kb | 4 Pg. |
| « Previous 1 Next » |
| 1. |  115.94 Kb • 3 Pages |
Abstract: ... NESG2046M33 NEC's NPN SiGe TRANSISTOR. FOR LOW NOISE, HIGH -GAIN AMPLIFICATION. California Eastern Laboratories. • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP. ... Labels: NESG2046M33 |
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| 2. |  29.03 Kb • 5 Pages |
Abstract: ... NESG2046M33 50 pcs (Non reel) 8 mm wide embossed taping. NESG2046M33-T3 10 kpcs/reel Pin 2 (Base) face the perforation side of the tape. Remark To order evaluation samples, contact your nearby sales ... Labels: NESG2046M33 |
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| 3. |  247.47 Kb • 4 Pages |
Abstract: ... NESG2046M33 NEC's NPN SiGe TRANSISTOR. FOR LOW NOISE, HIGH -GAIN AMPLIFICATION. California Eastern Laboratories. • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP. ... Labels: NESG2046M33, RoHS, Pb-Free |
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| 4. |  63.49 Kb • 6 Pages |
Abstract: ... FEATURES • 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor. f T = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz. Q2: Low phase distortion SiGe ... Labels: NESG2046M33 |
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| 5. |  73.51 Kb • 6 Pages |
Abstract: ... FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor. f T = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz. Q2: Low phase distortion transistor ... Labels: NESG2046M33 |
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| 6. |  60.89 Kb • 6 Pages |
Abstract: ... FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor. f T = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz. Q2: Low phase distortion transistor ... Labels: NESG2046M33 |
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