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| Part Number | Manufacturer | Description | |||||
| 1. |  NESG2031M16 |
NEC Electronics | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) | 58.66 Kb | 7 Pg. | ||
| 2. | NESG2031M16 |
California Eastern Laboratories / NEC | HIGH FREQUENCY TRANSISTOR | 191.32 Kb | 3 Pg. | ||
| 3. | NESG2031M16FB |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 6-pin Lead-less Minimold (M16, 1208 Package) | 58.66 Kb | 7 Pg. | ||
| 4. | NESG2031M16FB-T3 |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 6-pin Lead-less Minimold (M16, 1208 Package) | 58.66 Kb | 7 Pg. | ||
| 5. | NESG2031M16-T3 |
NEC Electronics | NPN SiGe high frequency transistor. | 81.37 Kb | 2 Pg. | ||
| 6. | NESG2031M16-T3-A |
California Eastern Laboratories / NEC | HIGH FREQUENCY TRANSISTOR | 189.77 Kb | 3 Pg. |
| « Previous 1 Next » |
| 1. |  81.36 Kb • 2 Pages |
Abstract: ... DESCRIPTION NEC's NESG2031M16 is fabricated using NEC� s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifi ers, medium ... Labels: NESG2031M16 |
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| 2. |  58.66 Kb • 7 Pages |
Abstract: ... NESG2031M16 50 pcs (Non reel) 8 mm wide embossed taping. NESG2031M16-T3 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape. Remark To order evaluation samples ... Labels: NESG2031M16 |
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| 3. |  189.75 Kb • 3 Pages |
Abstract: ... DESCRIPTION NEC's NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium ... Labels: NESG2031M16, RoHS, Pb-Free |
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