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| Part Number | Manufacturer | Description | |||||
| 1. |  NESG2031M05 |
NEC Electronics | NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) | 88.31 Kb | 14 Pg. | ||
| 2. | NESG2031M05FB |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) | 88.3 Kb | 14 Pg. | ||
| 3. | NESG2031M05FB-T1 |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M05) | 88.3 Kb | 14 Pg. | ||
| 4. | NESG2031M05-T1 |
NEC Electronics | NPN SiGe high frequency transistor. | 153.38 Kb | 12 Pg. | ||
| 5. | NESG2031M05-T1-A |
California Eastern Laboratories / NEC | NPN SiGe HIGH FREQUENCY TRANSISTOR | 630.26 Kb | 13 Pg. |
| « Previous 1 Next » |
| 1. |  88.3 Kb • 14 Pages |
Abstract: ... NESG2031M05. NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) Document No. PU10189EJ02V0DS (2nd edition) Date Published March ... Labels: NESG2031M05 |
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| 2. |  153.37 Kb • 12 Pages |
Abstract: ... DESCRIPTION NEC's NESG2031M05 is fabricated using NEC� s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifi ers, medium ... Labels: NESG2031M05 |
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| 3. |  630.28 Kb • 13 Pages |
Abstract: ... NPN SiGe RF TRANSISTOR. NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR. M05. NEC's NESG2031M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed ... Labels: NESG2031M05, RoHS, Pb-Free |
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| 4. |  344.27 Kb • 41 Pages |
Abstract: ... LNA NESG2021M05 NESG2031M05 NESG2101M05. Selection Guide PX10020EJ08V0PF 38. 5 GHz Wireless LAN. RF Front-end Basics. Base Band Processor. fRF. in. out. SW. LNA. PA. D/C. VCO. U/C. DEMOD. PLL. MOD. Rx. Tx. Recommended ... Labels: NESG2031M05 |
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