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| Part Number | Manufacturer | Description | ||||||
| 1. |  NESG2021M16 |
California Micro Devices | NPN SiGe HIGH FREQUENCY TRANSISTOR | 81.45 Kb | 2 Pg. | |||
| 2. | NESG2021M16 |
California Eastern Laboratories / NEC | HIGH FREQUENCY TRANSISTOR | 189.5 Kb | 3 Pg. | |||
| 3. | NESG2021M16FB |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 6-pin Lead-less Minimold (M16, 1208 Package) | 45.58 Kb | 7 Pg. | |||
| 4. | NESG2021M16FB-T3 |
NEC Electronics | NPN SiGe RF Transistor for Low Noise, High-gain Amplification 6-pin Lead-less Minimold (M16, 1208 Package) | 45.58 Kb | 7 Pg. | |||
| 5. | NESG2021M16-T3 |
California Micro Devices | NPN SiGe HIGH FREQUENCY TRANSISTOR | 81.45 Kb | 2 Pg. | |||
| 6. | NESG2021M16-T3-A |
California Micro Devices | NECs NPN Sige High Frequency Transistor | 189.5 Kb | 3 Pg. |
| « Previous 1 Next » |
| 1. |  81.45 Kb • 2 Pages |
Abstract: ... NEC's NESG2021M16 is fabricated using NEC� s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifi ers, me di um power ... Labels: NESG2021M16 |
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| 2. |  45.58 Kb • 7 Pages |
Abstract: ... NESG2021M16 50 pcs (Non reel) 8 mm wide embossed taping. NESG2021M16-T3 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape. Remark To order evaluation samples ... Labels: NESG2021M16 |
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| 3. |  189.51 Kb • 3 Pages |
Abstract: ... NEC's NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power ... Labels: NESG2021M16, RoHS, Pb-Free |
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