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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TSB11LV01PT Texas Instruments IEEE 1394-1995, 3.3V, 1-Port, 100Mbps Physical Layer Controller 48-LQFP visit Texas Instruments
TSB12LV23APZT Texas Instruments IEEE 1394-1995, 1394a Serial Link Layer Controller 100-TQFP 0 to 70 visit Texas Instruments

NEC k 1995 transistor

Catalog Datasheet MFG & Type PDF Document Tags

NEC k 1995 transistor

Abstract: 3SK176A DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS · , Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature * RL 10 k , Document No. P10567EJ2V0DS00 (2nd edition) (Previous No. TD-2263) Date Published August 1995 P Printed in Japan * Old Specification/New Specification © 1995 1989 3SK176A TYPICAL
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NEC k 1995 transistor rf id based home appliances control

4 npn transistor ic 14pin

Abstract: PA1032 DATA SHEET NEC COMPOUND TRANSISTOR _ _ _ _ _ _ _ _ _ _jf P A 103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin , © NEC Corporation 1995 NEC jiPA103 ELECTRICAL CHARACTERISTICS (Unless otherwise specified T a , o o k s . If c u stom ers intend to u s e NEC devices for applications other than th o s e specified , DESCRIPTION AND APPLICATIONS The ¿¿PA103 is a user configurable Silicon bipolar transistor array consisting
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4 npn transistor ic 14pin PA1032 8 npn transistor ic 14pin PA103B PA103G PAI03B-E1 PA103G-E1 UPA103B

TC-2513

Abstract: K2140 DATA SHEET NEC / 2S K 2140, 2S K 2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK2140,2SK2140-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters , Japan © Corporation 1995 9 I 5 NEC ELECTRICAL CHARACTERISTICS (Ta = 25 C) C H A R A C T E , (Drain) MP-25Z (SURFACE MOUNT TYPE) Drain - 1 G a te « J |l k Body , lH u i Diode h i
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TC-2513 K2140 MP-25 TC-0072

d1072

Abstract: 2SK2541 1995 M Printed in Japan © NEC Corporation 1995 NEC 2SK2541 ELECTRICAL CHARACTERISTICS (Ta = +25 , DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH , ) 4.0±0.2 2.0±0.2 EQUIVALENT CIRCUIT 1. Source 2. Drain 3. Gate Drain(D) Gate(G) i k, + Oâ'"fâ , of the transistor serves as a protector against ESD. When this device is actually used, an additional , Turn-Off Delay Time td(off) 21 ns Fall Time tf 31 ns 2 NEC 2SK2541 TYPICAL CHARACTERISTICS (Ta =
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d1072 MEI-1202 MF-1134 D10728EJ2V0DS00 TD-2522

NEC reliability 1995

Abstract: 2SK2541 edition) (Previous No. TD-2522) Date Published September 1995 M Printed in Japan © NEC Corporation 1995 NEC 2SK2541 ELECTRICAL CHARACTERISTICS (Ta = +25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX , from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2541 is a , . Drain 3. Gate Drain(D) Gate(G) i k, + Oâ'"fâ'"1i Source(S) (Diode in the figure is the parasitic
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NEC reliability 1995

NEC K 2500

Abstract: N transistor NEC K 2500 . Monlh 1 2 3 4 5 Year 1988 19 89 V 1990 1991 1992 1993 1994 1995 1996 j Black k I h i j k I m n o , DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector , - Collector to Base Voltage -V 2 NEC 2SC3604 INSERTION GAIN vs. C O 0.5 1 5
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NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC PART NUMBER MARKING

2SC2150

Abstract: 2SC1223 DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector , ) Date Published August 1996 P Printed in Japan © NEC Corporation 1996 NEC 2SC3604 , - Collector Current - mA V cb - Collector to Base Voltage -V 2 NEC 2SC3604 INSERTION
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2SC2150 micro X TRANSISTOR 2sC 5250 2SC3603

of 8404

Abstract: 3SK135A DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters , 150 ­65 to +150 *RL 10 k 0.4+0.1 ­0.05 0.8 VDSX VG1S* VG2S* ID PT Tch Tstg , = 900 MHz IDSS Classification Class Marking IDSS L/LS* K/KS* U65 U66 0.01 to 2 , 1995 P Printed in Japan * Old specification/New specification © 1995 3SK135A TYPICAL
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of 8404

lowest noise audio NPN transistor

Abstract: 4 npn transistor ic 14pin Published October 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1995 , DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY · OUTSTANDING hFE LINEARITY · TWO PACKAGE OPTIONS , transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and , ratings for each transistor. Caution electro-static sensitive devices The information in this document
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lowest noise audio NPN transistor MIL GRADE TRANSISTOR ARRAY MICRO-X TRANSISTOR MARK Q6 C10535E PA104B PA104G PA104B-E1 PA104G-E1

nec b 536 transistor

Abstract: NEC B 536 Japan © NEC Corporation 1995 NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) C H A R A C T E R , DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES · · · Low Noise, High Gain Low Voltage Operation Low , STYLE -H o OJ E m bossed tape 8 mm w ide. 2 S C 4 9 5 8 -T 1 3 K pcs/R eel. Pin3 (C ollector) face to p e rfo ra tion side of the tape. E m bossed tape 8 mm w ide. 2 S C 4 9 5 8 -T 2 3 K pcs/R eel
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nec b 536 transistor NEC B 536 P10380EJ2V0DS00 TD-2409

4 npn transistor ic 14pin

Abstract: C10535E Published October 1999 N CP(K) Printed in Japan The mark shows major revised points. © 1995 , DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It , maximum ratings for each transistor. Caution electro-static sensitive devices The information in this , latest version. Not all devices/types available in every country. Please check with local NEC
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PA103B-E1

2SJ460

Abstract: MEI-1202 Corporation 1995 NEC 2SJ460 ELECTRICAL CHARACTERISTICS (Ta = +25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX , from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching , ° -0.42 EQUIVALENT CIRCUIT 1. Source Dra;n(D) 2. Drain ?_ 3. Gate ^ , j-l Gate(G) k, oâ'"-tâ'"1 ^ à , of the transistor serves as a protector against ESD. When this device is actually used, an additional
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3SK177

Abstract: NEC U71 DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK177 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters , edition) (Previous No. TN-1877) Date Published August 1995 P Printed in Japan © 1995 3SK177 , 3SK177 900 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50 L2 L1 47 k RFC 1 000 pF 1 000 pF L1
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NEC U71 U73-U74

NEC U71

Abstract: 3SK299 DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES PACKAGE DIMENSIONS · Suitable , 35 30 to 40 IDSS Document No. P11034EJ1V0DS00 (1st edition) Date Published December 1995 P Printed in Japan © 1995 3SK299 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs , ) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50
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U71 nec

d1072

Abstract: 2SJ460 (3rd edition) Date Published April 1996 M Printed in Japan © NEC Corporation 1995 NEC 2SJ460 , DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH , . Drain ?_ 3. Gate ^ , j-l Gate(G) k, oâ'"-tâ'"1 ^ ô Source(S) (Diode in the figure is the parasitic diode.) The diode connected between the gate and source of the transistor serves as a protector , Fall Time tf 130 ns NEC 2SJ460 TYPICAL CHARACTERISTICS (Ta = 25 °C) 100 DERATING FACTOR OF
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D10729EJ3V0DS00

NEC k 2134 transistor

Abstract: NEC k 2134 DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS use as RF amplifier , . P10568EJ2V0DS00 (2nd edition) (Previous No. TC-2134) Date Published August 1995 P Printed in Japan © 1995 , 3SK206 900 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 000 pF 47 k 1 000 pF to 10 pF to 10 pF INPUT 50 to 10 pF to 10 pF OUTPUT 50 L2 L1 47 k RFC 1 000 pF 1 000 pF VG1S
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NEC k 2134 transistor NEC k 2134 k 2134 nec TRANSISTOR nf 842 nf025 u79 transistor

NEC k 1995 transistor

Abstract: -3574) Date Published July 2005 NS CP(K) Printed in Japan 1995 µ PA506T 2 Data Sheet , DATA SHEET SILICON TRANSISTOR µ PA506T NPN/PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQENCY , are available in every country. Please check with an NEC Electronics sales representative for , without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
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G17683EJ2V0DS00 IC-3574 G17683EJ2V0DS

nec k 813

Abstract: s11 diode shottky DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE , ) (Previous No. TD-2369) Date Published October 1995 P Printed in Japan MIN. © 1995 NE33284A , effect transistor with AlGaAs shottky barrier gate. 2 NE33284A TYPICAL CHARACTERISTICS (TA = 25 , 1 + | |2 - | S11 |2 - | S 22 |2 2 | S12 | S 21 | MSG. = | S 21 | | S12 | K= MAG. = | S 21 | (K ± K 2 - 1) | S12 | = S11 S 22 - S 21 S12 3 NE33284A S-Parameters VDS = 2
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NE33284A-SL NE33284A-T1 NE33284A-T1A nec k 813 s11 diode shottky NE33284AS IEI1207 P10874EJ2V0DS00

NEC 41-A 002

Abstract: 8085 based traffic control system DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES · · · · Suitable for use as RF , s t 1995 P P rinted in J a p a n © N E CC orporation 1995 NEC TYPICAL CHARACTERISTICS (T a = , ds = 10 V, V g2S = 4 V, Id = 10 mA, f = 1 MHz Id s s Classification L/LS* U65 0.01 to 2 K/KS , mA 0 1.0 2.0 3.0 4.0 Vg2s - Gate2 to Source Voltage - V 2 NEC POWER GAIN
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NEC 41-A 002 8085 based traffic control system

MARKING H19

Abstract: m30 tf 125 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR , , Duty Cycle 50% Remark The diode connected between the gate and source of the transistor serves as a , check with an NEC Electronics sales representative for availability and additional information. Document No. D10730EJ4V0DS00 (4th edition) Date Published April 2005 NS CP(K) Printed in Japan The mark shows major revised points. 1995 2SJ461 ELECTRICAL CHARACTERISTICS (TA = 25
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MARKING H19 m30 tf 125 Diode marking m7 m02 marking transistor SC-59
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