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TK-850/JG3H Renesas Electronics Corporation V850ES JG3H DEMO NEC TOOLS visit Digikey Buy
DM-78K0R-KE3L Renesas Electronics Corporation NEC LOW POWER DEVELOPMENT KIT BASED ON K0R MICROCONTROLLER visit Digikey Buy
DM-78K0IX2-LED Renesas Electronics Corporation 78K0 IB2 NEC TOOLS LED DEMO visit Digikey Buy
0850300426 Molex DIN C MALE NEC CUST visit Digikey Buy
L57IID12V Kingbright LED 5MM 617 NM RED DIFF TH visit Digikey Buy
GN3352-3EA8AQ3E3 Semtech Corporation IC ROSA 10G APD NEC CUSTOM visit Digikey Buy

NEC B 617

Catalog Datasheet MFG & Type PDF Document Tags

transistor NEC B 617

Abstract: nec 2035 744 fo r any e rro rs w h ich may appear in th is docum ent. NEC C orporation does not assum e any lia b , DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA , nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique , . * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall , ) (P re v io u s No. T D -2 4 0 1 ) Date P u b lish e d J u ly 1995 P P rinted in J a p a n © N E CC
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transistor NEC B 617 nec 2035 744 transistor 3568 7749 transistor zo 607 p 408 ic 151 811 2SC5010-T1

transistor NEC B 617

Abstract: dsa0022806 perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 95.0 91.8 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037 , 2SC5338 PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 4.5±0.1 2.1 1.6 0.8 0.85 E B
NEC
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2SC4703 2SC5338-T1 dsa0022806 iC 828 Transistor sf 818 transistor

NEC B 617

Abstract: awm STYLE 2919 P A I R E D C A B L E S 5.42 Individually Shielded Audio, Control and Instrumentation Cables Description UL NEC/ No. Part C(UL) CEC of No. Pairs Type Color Code Standard , Style 2919 9873 NEC: 3 See 100 30.5 (30V 80°C) CM Chart 3 250 76.2 CEC: CM 9874 9875 , 14.0/M 45.9/km .341 8.66 50 66% 30 98 55 180 (Tech Info Section) NEC: CM CEC: CM 6 NEC: CM CEC: CM 9 NEC: CM CEC: CM 11 NEC: CM CEC: CM 12
Belden Wire & Cable
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NEC B 617 awm STYLE 2919

nec hf 324

Abstract: transistor NEC D 587 pT Notel T, Tstg PIN CONNECTIONS E: Emitter C: Collector B: Base Note 1 . 0.7 mm x 16 cm , Published April 1996 P Printed in Japan © NEC Corporation 1996 NEC ELECTRICAL CHARACTERISTICS (TA , < < NEC TYPICAL CHARACTERISTICS (TA= 25 °C) lc - V ce 2SC5338 Characteristics lc- Collector , Collector Current - mA - Collector to Base Voltage - V IM2 - lc Characteristics Distortion - d B , Collector Current - mA 3 NEC IS21 e |2 Ic 2SC5338 Characteristics IS2 iel2 - Insertion Power
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nec hf 324 transistor NEC D 587 nec 2501 Le 629 NEC 2501 LE 737 transistor lc 7822 c 341S P10940EJ1V0DS00

NEC 2987

Abstract: transistor NEC B 617 N CP(K) Printed in Japan © NEC Corporation 1998 NEC hFE CLASSIFICATION RANK Marking hFE EB , DISSIPATION 50 Vce= 3 V 5 £ < E 40 COLLECTOR CURRENT vs. DC BASE VOLTAGE 30 Q ¡5 5 CL o B O £ o O , 2 Preliminary Data Sheet NEC GAIN BANDWIDTH PRODUCT 2SC5435 INSERTION POWER GAIN fr - , /fNSERTlON N F - Noise Figure - d B 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 , 50 - Collector to Base Voltage - V Preliminary Data Sheet 3 NEC 2SC5435 V ce
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NEC 2987 transistor NEC D 822 P TL 1701 TL 431 0323 9418 transistor

3692 nec

Abstract: (K) Printed in Japan © NEC Corporation 1998 NEC RECOMMENDED OPERATING CONDITION (Ta = 2 5 , . 10 Unit kA 2 V, Vos = 0 V b Id 20 -0.2 50 =2V 60 -0.7 65 0.8 0.4 90 -2.0 mA V mS , Data Sheet NEC PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) 0.2 V NE4210M01 0.153 , o 5 6 Preliminary Data Shee 3 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) NE4210M01 , Id -D rain Current - m A f - Frequency - GHz 4 Preliminary Data Sheet NEC Gain
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3692 nec NE4210M01-T1 P13682EJ1VODSOO

3563 1231

Abstract: transistor NEC B 617 DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , 0.1 ^ 0- 15-o, * Please contact with responsible NEC person, if you require evaluation sample , S 0 0 (2nd e d itio n ) (P re v io u s No. T D -7 9 3 8 ) D ale P u b lish e d A u g u s i 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL CHARACTERISTICS (T a = 25 C , hFE KB T83 75 to 150 2 NEC TYPICAL CHARACTERISTICS (T a = 25 °C) TOTAL POWER DISSIPATION
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3563 1231 nec d 1590 2SC5015-T1 2SC5015-T2 2SC5014

sf 818 transistor

Abstract: transistor NEC B 617 ±0.06 V Collector Current E 0.42 ±0.06 V Collector to Emitter Voltage B , Storage Temperature Tstg 1.5 3.0 0.46 ±0.06 PIN CONNECTIONS E: Emitter C: Collector B , .322 - 96.3 1600 .349 157.0 2.017 61.7 .220 68.8 .314 - 92.3 1700 , .290 150.4 1.886 61.7 .247 69.4 .371 - 89.3 2000 .300 148.7 1.787 , any means without the prior written consent of NEC Corporation. NEC Corporation assumes no
NEC
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NPN transistor mhz s-parameter

NF 831

Abstract: u b lish ed N o ve m b e r 1 996 N P rinted in Ja p a n _ © n . NEC Corporation 1994 NEC 2SC5186 ELEC TR IC A L C H A RA CTERISTICS (T a = 25 C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Collector Cutoff Current Ic B O 100 nA V cb = 5 V , DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA , . * C ontact your NEC sales representatives to order sam ples for evaluation (available in batches of
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NF 831 2SC5186-T1

sf 818 transistor

Abstract: SE 566 IC 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037 0.057 0.066 , 1.6 0.8 0.85 E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06 0.42±0.06 0.25±0.02 0.42±0.06 1.5 3.0 E : C: B
NEC
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SE 566 IC ic 7480 SF+827+c P10940JJ2V0DS00 P10940JJ2V0DS

tft 320 240 qvga color 16,7

Abstract: JASO devices/types available in every country. Please check with local NEC representative for availability and , ) R H-driver G B Controller Hsync Vsync YS 960 lines V-driver DPSH 240 lines LCD panel CS H: 320 × 3 (R,G,B) V: 240 DPSV PNS Power supply GND Note1 VCC , : Display signals for visual are CLK, CS, YS, R, G and B. Note2: Display signals for syncs are Hsync and , circuit may work, and then this product may not work. Note2: Display (CLK, CS, YS, Hsync, Vsync, R, G, B
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NL3224AC35-06 tft 320 240 qvga color 16,7 JASO THP 100 CCP2E25TE IL-402-30S-S1L-SA 55LHS-3L DE0203

nec 3326

Abstract: Nec b 616 -34.8 - 40.4 -46.1 -50.7 -5 4 5 -57.3 -62.3 -65.0 -70.0 S11 B NEC V ce = 2 V , lc = 5 mA, Zo , Japan Q N K Corporation 1994 ^ NEC ELECTRICAL CHARACTERISTICS (T a = 25 °C) PARAMETER , mo CURVES / jj O 3 S "0 6 0 p H md $ &. s B P t 3 «3 (T a = 2 5 °C) 5 lc - Collector Currarrt - mA 88 33 SS JJ > 5< 5 « 33Z o m 3 < Q _ I < NEC NOISE , to Base Voltage - V NEC S-PARAMETERS V ce = 1 V , Ic = 1 m A , Z o = 50 SI FREQUENCY MHz 600.00
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nec 3326 Nec b 616 NF 948 2SC5181 2SC5181-T1 P12105EJ2V0DS0Q TC-2478

C0456

Abstract: C0451 5.77 6.04 6.17 6.48 7.32 7.57 8.00 NOM. CAP.* pF/ft A B 43.0 39.5 50.0 45.0 51.5 46.5 77.5 71.0 89.5 , Shield NEC Type PLTC Product Construction: Conductor: · 22 thru 12 AWG fully annealed stranded tinned copper per ASTM B-33 Insulation: CATALOG NO. OF AWG NUMBER COND. SIZE NOM. INSULATION NOM , conductors *B ­ Capacitance between one conductor and other conductors connected to shield Features: · , . COLOR Black Red White 1 2 3 Compliances: · NEC Article 725 Power-Limited Tray Cable (UL: 105
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C0456 C0451 0013 C0450A C0451A C0452A C0453A C0454A C0455A
Abstract: (collector) facing the perforation C ontact your NEC sales representatives to order sam ples for , s h ig h -fre q u e n c y te c h n o lo g y . B e c a re fu l n o t to a llo w e x c e s s iv e c u , P u b lish ed N o ve m b e r 1 996 N P rinted in Ja p a n © N CC rp ratio E o o n r 1994 NEC 2SC5181 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) MAX. UNIT Collector Cutoff Current PARAMETER SYMBOL Ic B O MIN. TYP. 100 nA V cb = 5 V, Ie = 0 Emitter -
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613 GB 123 CT

Abstract: docum ent. NEC C orporation does not assum e any lia b ility fo r in frin g e m e n t of patents, c o p , ) Rem ark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sam ple quantity is 50 pcs.) PIN CO N FIG U RA TIO N (Top View) A B S O L U T E M A X IM U M R A T , c u m e n t is s u b je c t to c h a n g e w it h o u t n o tic e . Document No. P11465EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © NEC Corporation 1995 NEC E L E C T
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613 GB 123 CT PA812T 2SC4227 PA812T-T1

Luminaire Photometric data

Abstract: N2MV-WM1 . 2, Groups A, B, C, D Cl. II, Groups F, G Cl. III & Simultaneous Presence Champ® Non-metallic , , especially when carrying up a ladder Certifications and Compliances: · NEC and CEC: Class I, Division 2, Groups A, B C, D Class II, Class III & Simultaneous Presence (Class I, Division 2 and II) · UL , , etc. . S808 Average Luminaire Weight Standard Voltage Ballasts NEC/UL & , multiplier. Footcandle Values for Isofootcandle Lines A B C D E 8' 10' 12' 16' 6L
Cooper Crouse-Hinds
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Luminaire Photometric data N2MV-WM1 G303-S808 N2MVF2C064GP RD739 T2D 44 diode

UA808

Abstract: MPA80 contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T a = , ) (Previous No. ID-3642) Date Published Novem ber 1996 N Printed in Japan © NEC Corporation 1995 NEC , (1) Insertion Power Gain (2) Noise Figure (1) Noise Figure (2) hFE ¿iPA808T SYMBOL IC B O Iebo , °C) T O T A L PO W ER D IS S IP A T IO N v s A M B IE N T T E M P E R A T U R E C O L L E C T O R C U R R E N T vs. B A S E T O E M ITTE R V O L T A G E V ce = 2 V , Ö 10 / / 0 .5 1
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UA808 MPA80 ic nec 1185 pin configuration LT 5238 UPA808T 2SC5184 PA808T PA808T-T1

transistor NEC D 822 P

Abstract: transistor NEC B 617 = 25 °C) P aram eter Collector to B ase V oltage Collector to Em itter Voltage Em itter to B ase V , rr n Notel W °C °c PIN C O N N EC TIO N S E: Emitter C: Collector B: Base Tj Tstg Note 1 , © NEC Corporation 1996 NEC TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs , Current - mA GAIN B A NDW IDTH PRODUCT vs. INSERTION GAIN .MAXIMUM GAIN vs. FREQUENCY - Gain , mA 2 NEC 2SC5336 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT -8 0 - dB IMa
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NEC D 822 P NEC D 809 50/transistor NEC D 822 P NEC D 809 F 4435 power ic P1093 2SC3357

transistor NEC B 617

Abstract: nec k 3115 perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 66.0 66.1 64.0 64.2 63.5 63.3 61.7 0.017 0.027 0.035 0.042 0.052 0.061 0.071 0.081 , E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06 0.42±0.06 0.25±0.02 0.42±0.06 1.5 3.0 PIN CONNECTIONS E : Emitter C: Collector B : Base 6
NEC
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2SC5336-T1 nec k 3115 NEC k 3115 transistor NEC 718

2SC4703

Abstract: 2SC5338 To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC , perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative , . Please check with local NEC representative for availability and additional information. Document No , 113.6 103.3 96.7 92.0 89.2 86.9 84.3 82.7 81.8 80.4 77.2 67.5 64.6 63.4 61.7 60.9 60.3 , 95.0 91.8 89.3 86.7 84.9 84.0 82.6 79.5 69.9 67.0 66.2 64.7 64.1 62.6 61.7 60.7 0.037
Renesas Electronics
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