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Part : DIL48/QFP100 ZIF NEC-13 Supplier : Dataman Programmers Manufacturer : Newark element14 Stock : - Best Price : $570.00 Price Each : $570.00
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NEC 1357

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: level (Unit:mm) 8.2 (+/­) 0.3 4.1 3.5 0.45 25 50 (+/­) 1 13.57 1.27x14=17.78 1.27 , , Fiber Optic Devices Division Optical Network Operations Unit, NEC Networks NEC Corporation 1753 , ://networks.nec.co.jp/on/dd/en/ Copyright © 2002 NEC Corporation NEC Electronics (Europe) GmbH Sales and marketing , FAX:+49-211-6503-358 USA&CANADA NEC FiberOptech, Inc. 10050 North Wolfe Road, Suite SW1-290 Cupertino, CA 95014,USA Tel: +1-408-863-2000 Fax: +1-408-863-2019 NEC NEC
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OD-B1511-OLTTB OD-B1511-OLTRB NEC FiberOptech NEC power supply D-B1511-OLTRC
Abstract: Printed in Japan © NEC Corporation 1996 NEC NEZ-15D/15DD A B S O L U T E M AXIM UM R A T IN G S , 'e m Channel to Case 2 NEC 15 W C-BAND Po GaAs FET NEZ SERIES 15W P E R F O R M A N C , supply and the F E T gate. 3 NEC T Y P IC A L C H A R A C T E R IS T IC S (T a = 25 'C) 15 W , Input Power - dBm 4 NEC NEZ6472-15D/15DD Pout (dBm) 15 W C-BAND Po GaAs FET NEZ SERIES , PU T P O W E R Pin- Input Power - dBm Pin - Input Power - dBm 5 NEC S-PARAMETER -
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nec 2571 nec 2571 4 pin ez 946 IMS 3630 k 3918 fet NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D NEZ7785-15D 0982EJ1
Abstract: responsible NEC person, if you require evaluation sample. It is available for 50 pcs. one unit sample lot , 152.3 149.8 147.4 144.2 142.4 139.5 137.1 135.7 132.9 131.3 129.1 127.5 125.5 14.255 , 176.2 171.4 167.3 163.4 160.3 157.1 152.6 150.0 146.7 144.1 140.6 138.6 135.7 132.3 131.0 , reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not NEC
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2SC5011 2SC5011-T1 2SC5011-T2 NEC 3552 TD-2411 1357 transistor NEC
Abstract: output power, high gain and high efficiency at C-band 2.5 MIN. NEC's strigent quality assurance and , ­175.6 160.5 138.1 117.9 97.2 77.2 53.9 32.8 8.8 ­15.5 ­47.1 ­78.1 ­107.2 ­135.7 ­160.4 , ANG MAG ANG MAG ANG ­154.0 ­171.8 171.4 153.2 135.7 119.1 101.9 82.2 59.6 33.3 , ­109.4 ­122.2 ­147.9 ­173.6 162.0 135.7 122.8 109.7 96.9 83.2 70.0 56.1 42.4 28.3 13.4 , means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility NEC
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gl 2576 nez5964-15dd P10982EJ1V0DS00
Abstract: , 1212T: Small core magnet Models 1247, 1347, 1349: Annular, rectifier Models 1257, 1357, 1359 , , 1347, 1357, 1377: 3.14" (79.9mm); Model 1329, 1329T, 1349, 1359, 1379: 3.93" (100mm) Net Weight , 4.70 4-1/2" Model 1379 3-1/2"-Model 1327, 1327T, 1347, 1357 4.70 For more information, visit , /2" Model 1357 06625 06630 06640 06650 06660 35065 4-1/2" Model 1359 06665 06670 06680 , . Impedance (Ohms) @ 60 Hz Model/Size and Catalog Number 2-1/2" Model 1257 3-1/2" Model 1357 Simpson Electric
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1227T 15-0-15 center transformer 09715 30-0-30 center transformer 15-0-15 transformer 09640 55-65H
Abstract: NEC/ CALIFORNIA_ 6427414 N E C/ CALIFORNIA BD OOODlET 3 | ' 30C 00129 D 7^3/w23 MICROWAVE , Series takes advantage of NEC's advanced Stepped Electrode Transistor (SET) technology. SET devices , ttw 1 " 1 L Output Tarmimi 3 NEC/ CALIFORNIA 3D DE|b427414 â¡â¡00135 3 J^DT' 3/- S3 NE568, MEDIUM , 0.52 -163 4 NEC/ CALIFORNIA 3D DE |b4E74l4 DDDD133 S NE568, MEDIUM POWER MICROWAVE OSCILLATOR AND , 700 .766 178.1 6.971 79.7 .044 25.9 .232 -135.7 800 .744 174.5 6.076 75.2 .046 28.2 .219 -141.7 900 -
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NE56855 NE56854 NE56800 2SC2339 2SC2342 microwave oscillator transistor code 458 055 transistor code 2sc2342 bd 743 transistor NES6851
Abstract: NONLINEAR MODEL Q1 LCX LBX Base LB CCE Collector NE68833 SCHEMATIC CCBPKG CCB CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 1.1 3.5 , = 1 mA to 10 mA Date: 8/03 (1) Gummel-Poon Model Life Support Applications These NEC products , NEC Compound Semiconductor Devices, Ltd. California Eastern Laboratories California Eastern Laboratories
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Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ELECTRICAL , 80 to 160 GB R28 125 to 250 2 NEC T YP IC A L C H A R A C T E R IS T IC S (Ta = 25 °C) TO , Collector Current - mA 3 NEC N O IS E F IG U R E vs. 2SC5011 IN S E R T IO N P O W E R G AIN/M , V cb 5 10 20 50 - Collector to Base Voltage - V 4 NEC S-PARAM ETER V c e = 1 -
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transistor NEC D 882 p 393AN 2sc 1329 e50p nec a 634 nec d 1590
Abstract: 1998 N CP(K) Printed in Japan © NEC Corporation 1998 NEC NE850R599A ABSOLUTE MAXIMUM , specification. * *: The same as the above except this. 2 - 9.5 - dB Pin < 7 dBm (*) NEC , dBm 3 NEC NE850R599A TYPICAL S-PARAMETERS (Ta = 25°C) V ds = 10 V , I d = 1 0 0 m A s , '™ / / < / \ V N C - '/ \ \ / / \ 1 / / y / " STOP 4 \ 11.000000000 GHz NEC , NEC NE850R599A S-PARAMETERS V ds = 10 V, Id = 100 mA set FREQUENCY MHz ANG MAG ANG -
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CODE-99 P13433EJ1V0D
Abstract: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON , perforation side of the tape. PIN CONNECTIONS * Please contact with responsible NEC person, if you , P P rinted in Ja p a n © NEC Corporation 1993 NEC 2SC5011 ELECTRICAL CHARACTERISTICS , NF = 0 V ce = 1 0 V , Ic = 2 0 m A * 1 250 6 .5 Ie NEC 2SC5011 TYPICA L C HA , - mA 3 NEC 2SC5011 NOISE FIGURE vs. INSERTION POW ER GAIN/M AXIM UM AVAILABLE GAIN vs -
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Abstract: -95.6 -99.6 -162.6 165.5 146.7 135.7 127.0 8 Preliminary Data Sheet P 13865EJ1V0DS00 NEC V ce , hole direction Remark To order evaluation samples, consult your NEC sales representative (available , . P13865EJ1V0DS00 {1st edition) Date Published March 1999 N CP(K) Printed in Japan © NECCorooration 1999 NEC , CLASSIFICATION Rank Marking flFE FB T79 50 to 100 2 Preliminary Data Sheet P13865EJ1VODSOO NEC , Current lc (mA) Preliminary Data Sheet P13865EJ1V0DS00 3 NEC Gain Characteristics -
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transistor marking T79 ghz TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz 2SC5508 2SC5508-T2
Abstract: E C/ CALIFORNIA 5 bE D b4E7414 G002b4b 103 HNECC NEC FEA TU RES · H IG H ISO LA T , 1.27± 0.1 1 .2 7 ± 0 .1 (LEADS 2,4,6,8) 0.8 _0 .4(LEADS 1.3.5.7, CONNECTIONS 1. Input 2. GND 3. GND 4 , thermal dissipation. 5-78 NEC/ CALIFORNIA 5bE D bM2741M OQQEbM? ÖMT H N E C C , Frequency, f (MHz) Frequency, f (MHz) NEC/ CALIFORNIA shE T > UPC1675B, UPC1675G, UPC1675P , 5-80 NEC/ CALIFORNIA 5bE D b427414 0 0 0 2 b 4 t ì bl2 H N E C C UPC1675B, UPC1675G -
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PC1675G 1675P 4E7414 UPC1675 UPC1675B/P
Abstract: range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today , Parameters Q1 time seconds IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 , Voltage, VBE (V) Life Support Applications These NEC products are not intended for use in life support , improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC , TO CHANGE WITHOUT NOTICE 06/10/2002 NEC NEC
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NE688M03 NE688 2SC5437 15E14 S21E
Abstract: Standard Compliances â  NEC Article 725 Type CL2 (ETL: 60°C) â  ETL listed (UL Standard 13) â  NEC Article 800 Type CM (ETL: 60°C) â  ETL listed (UL Standard 444) â  RoHS Compliant Directive , 6.35 9.15 11.02 12.28 13.57 15.84 â'¢ #7; are copper B Insulation/Core: â'¢ Coax: Foam General Cable
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2002/95/EC C114217F B/100 CAR-0136-0311
Abstract: DOC. NO. 05CB-000392 PART NO. 0506-001002 PRFL IMINARY DATA SHEET NEC SILICON , quantity is 50 pcs.) NEC ABSOLUTE MAXIMUM RATINGS (TA = 25 oC) Note 110 mW must not be exceeded in , -3634 (O.D. No. ID-9141) Date Published April 1995 P Printed in Japan NEC Corporation 1995 DOC. NO. 05CB-000392 NEC PART NO. 0506-001002 PA800T ELECTRICAL CHARACTERISTICS (TA =25 oC) Notes 1 , . NO. 05CB-000392 PART NO. 0506-001002 NEC PA800T Collector to Base Voltage vce (V NEC
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transistor A798 a1016 616 transistor 2SC4228 ID-3634
Abstract: thermal resistance, the device has a PHS. (Plated Heat Sink) NEC's strigent quality assurance and test , P rinted in Ja pa n © N E CC orporation 1996 NEC ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C , . * The same conditions as the above except this. 2 NEC TYPICAL CHARACTERISTICS (Ta = 25 C , NEC S-PARAM ETER )s = 10 V, Id s NE85001 SERIES = 200 mA , V gs = -1.260 V, Ig = , -115.5 -119.1 -127.8 -135.7 -144.6 -153.1 -157.9 -162.9 -173.2 177.3 MAG 0.007 0.024 0.031 0.034 0.038 -
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Nec K 872 NE8500199 NE8500100 NE8500100-WB NE8500100-RG 0968EJ1
Abstract: order evaluation samples, consult your NEC sales representative (available in 50-pcs units). ABSOLUTE , 28.0 23.2 17.2 12.4 0.14 0.12 0.17 0.23 0.30 0.36 ­99.6 ­162.6 165.5 146.7 135.7 , ­142.6 ­137.3 ­135.7 ­134.1 ­126.5 Preliminary Data Sheet P13865EJ1V0DS00 0.12 0.13 0.13 , . For soldering methods and conditions other than those recommended, consult NEC. Soldering Method(s , prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors NEC
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marking T79 C10535E transistor marking T79
Abstract: - 238 - m 2SD1340, 2SD1341, 2SD1342 % = ^ = = H H # = = tt Manuf. £ H SANYO # Type No. It TOSHIBA 2SD869 2SD820 2SD870 2SD821 2SD871 2SD553 2Ê 0 NEC W. 0 HITACHI i V ± ii FUJITSU & T MA T S U S H I T A 2SD1173 z m - ROHM A MITSUBISHI ft ft ft 2SD1887 2SD1884 2SD1878 2SD1885 2SD18B5 2SD1061 2SD 1343 2SD 1344 2SD 1345 2 S D 134/ 2SD 1348 2 S D 1349 2 S D 1351 2 S D 1352 2 S D 1353 2SD 1354 2 S D 1355 2SD 1356 2 S D 1357 -
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2SD1175 2SC3252 2SD1944 2SD2061 2SD1833 SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 D1351 2SC4329 2SD1442 2SD966 2SC2594 2SD1457A
Abstract: s s Type No. tt S Manuf. H # SANYO S 2 TOSHIBA 0 â  NEC 0 iL HITACHI « ± a FUJITSU fô T MATSUSHITA H m MITSUBISHI â¡ â'" A BÃHM 2SB 1353 â¡ -A 2SA1S07 2SA1220 2SB1192 2 SB 1354 . â¡ â'"A 2SA1824 2SB1217 2SB1417 2SB 1355 â¡ -A 2SA1855 2SB1151 2SB942 2 SB 1356 O-A 2SA1825 2SB953 2SB 1357 - â¡ -A 2SA1855 2SB1217 2SB1417 2SB 1358 â¡ â'"A 2SA1824 2SB1151 2SB1317 2SB 1359 â¡ -A 2SA1826 2SR1U9 2SB919A 2SB 1360 â¡ -A 2SA1827 2SB950A 2SB 1361 fé T -
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2SB817 2SA1227A 2SB1132 2SB1133 2SB1017 1354 sB1354 2sb941 2SB1376 2SB863 2SA1784 2SB1209 2SB1119
Abstract: +0.1 0.3 ­0 0.65 0.65 (NESATTM process) which is an NEC proprietary fabrication technique. 7.5 , contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 , 135.7 131.1 124.4 119.2 114.1 109.3 104.8 101.1 96.0 92.1 88.8 85.5 82.2 78.9 75.5 .025 , without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for NEC
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2SC4228-T1 2SC4228-T2 NEC 2905 sc 789 transistor transistor 936 SC-70 P10372EJ2V0DS
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