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NE68130-T1-A California Eastern Laboratories (CEL) TRANSISTOR NPN 1GHZ SOT-323 visit Digikey Buy
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NE68130-T1-R34-A California Eastern Laboratories (CEL) SAME AS 2SC4227 NPN SILICON AMPL visit Digikey Buy
2SC4227-T1-R34-A California Eastern Laboratories (CEL) SAME AS NE68130 NPN SILICON AMPL visit Digikey Buy

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NE68130 Datasheet

Part Manufacturer Description PDF Type
NE68130 NEC Semiconductor Selection Guide Original
NE68130 NEC NPN silicon high frequency transistor. Original
NE68130 NEC Super Minihold Transistors Scan
NE68130-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original
NE68130-T1 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE68130-T1 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original
NE68130-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SOT-323 Original

NE68130

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68130 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 -
Original

NE85630

Abstract: nec03 . Emitter 2. Bim 3. Collector ABSOLUTE MAXIMUM RATINGS , NUMBER EIAJ1 REGISTERED NUMBER NE68030 2SC4228 NE68130 2SC4227 NE68330 2SC4187 NE85630 2SC4226
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OCR Scan
NEC0330 nec03 minimold Mini-Mold NE68030 NEC 00s1 NE68183 NE66030 QQ023S3

NE85630

Abstract: T62 marking Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 (ALL LEADS) MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE94430 EXCLUSIVE NORTH AMERICAN AGENT FOR +0.10 0.15 -0.05 MARKING T62, T63, T64 R2, R3 R43, R44, R45 R33, R34, R35 T83 T84 T86 T88
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Original
T62 marking marking R33 marking t43 t84 marking
Abstract: NE68130 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)7.0m @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq7.0GÃ' @I(C) (A) (Test Condition)7.0m @V(CE) (V) (Test Condition)3.0 Power Gain Min. (dB) @I(C American Microsemiconductor
Original

73412

Abstract: NE64535 NE68519 NE85619 NE02130 NE68030 NE68130 NE68530 NE85630 NE02133 NE68033 NE68133 NE68533 NE85633 NE85634 , SUPER MINI MOLD NE68030 NE68130 NE68530 NE85630 3 PIN MINI MOLD NE68033 NE68133 NE68533 NE85633 4 PIN , NE68130 N E 68133 NE68135 N E 68139 N E685 Series N E 68518 NE68S19 N E 68530 N E 68539 N E 734 Series * N
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OCR Scan
NE02135 NE64535 73412 CHIP transistor 348 Transistor 120 NE68039 NE46134 NE46734 NE68119 NE68019 NE02100 NE21900

kf 203 transistor

Abstract: 682 MARKING SOT-23 QUANTITY PACKAGING NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 , NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX 9.0 9.0 , 178 0.51 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = , SERIES NE68130 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base
California Eastern Laboratories
Original
NE681 kf 203 transistor 682 MARKING SOT-23 NE AND micro-X transistor KF 507 NE68118 NE68139R-T1

NE68018

Abstract: NE68619 NE68719 NE68819 NE85619 NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NÉ02133
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OCR Scan
NE68018 NE68518 NE68618 NE68718 NE68818 NE85618

sot 326

Abstract: NE02139 Low Noise Bipolar Transistors Ì I TEST Part ' *- i NHG* Vcc M SURFACE MOUNT PLASTIC NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 NE68619 NE68719 NE68819 NE85619 NE02130 NE68030 NE68130 NE68530 NE68630 NE68730 NE68830 NE85630 NE02133 NE68033 NE68133 NE68533 NE68633 NE68733 NE68833 NE85633 NE97733 NE97833 NE85634 NE02139 NE68039 NE68139 NE68539 NE68639 NE68739 NE68839 NE85639 NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 2.0 1.0 2.0 2.0 2.0 2.0 1.0 2.0 1.0
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OCR Scan
sot 326 338 sot-23

NE88933

Abstract: ne85639 11 6 10 2.0 8.0 10 6 10 50 100 250 10 35 0.20 NE681 NE68130 3 7 10 14 3 7 1 0 12 70 7 40 240
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OCR Scan
NE21935 NE645 NE68035 NE88933 NE683 NFC46 NE85635/CEL NE57835 NL68030 NE856 NE85635

kf 203 transistor

Abstract: 08E-12 NUMBER QUANTITY PACKAGING NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 , NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX , 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , : 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 10 mA NE681 SERIES NE68130 NONLINEAR
California Eastern Laboratories
Original
08E-12 IC 2030 PIN CONNECTIONS BF 194 npn transistor MICROWAVE TRANSISTOR epitaxial micro-x S21E

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 2 Insertion Gain |S21e|2 (dB) 21e 2SC2759 13.0 NE85639E NE68133 12.0 NE68130 , NE851M03 10.0 NE68130 NE68833 *1 NE851M13 NE851M33 NE68039 NE68139 NE67839 NE67818 , 5 2.0 1.9 Fig.4 NE68130 20 10 1.5 150 3 7 40 240 7.0 3
NEC
Original
marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd P14740 P14740EE5V0PF00

NE68130

Abstract: 1820 0944 QUANTITY PACKAGING NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 , NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX , 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , : 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 10 mA NE681 SERIES NE68130 NONLINEAR
California Eastern Laboratories
Original
1820 0944 ca 4558 BJT BF 167 bjt 522 BJT IC Vce marking 855 sot 353

nec b1007

Abstract: T79 code marking NE68130 NE68530 NE68830 NE85630 +0.10 0.15 -0.05 MARKING R43, R44, R45 R33, R34, R35 T83 T88
California Eastern Laboratories
Original
NE02107 C3206G nec b1007 T79 code marking C3206 marking s16 marking code C1H C3H marking NE680 UPC2798GR C2798G UPC2726T UPC3206GR

NE66100

Abstract: Transistor C 1279 MAX MIN NE68130 2SC4227 30 TYP MAX PAR AM ETERS AN D CON DITIONS Gain Bandwidth Product at Vce = , +150°C. NE68130 TYPICAL NOISE PARAMETERS (T a=aso FREQ. (MHz) N F opt Ga (dB) to pt (dB
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OCR Scan
NE66100 Transistor C 1279 ic 17806 h16101 transistor c 6073

BJT characteristics

Abstract: NE68135 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 100 3000 3000 3000 3000 1 3000 3000 , NE68119-T1-A NE68130-T1-A NE68133-T1B-A NE68135 NE68139-T1-A NE68139R-T1 100 3000 3000 3000 3000 1 , GHz GHz NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX , 4000 3.25 7.76 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ , mA NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector
California Eastern Laboratories
Original
BJT characteristics lc 945 p transistor NPN TO 92 NE68118-T1-A 7926 SOT-143R 11481

Transistors BF 494

Abstract: Transistor BJT 547 b NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 QUANTITY 100 3000 3000 3000 3000 1 3000 3000 PACKAGING , 2SC5007 19 TYP MAX MIN NE68130 2SC4227 30 TYP MAX NF G nf IS 21E |2 9 50 hFE 50 ICBO , +150D C. NE68130 TYPICAL NOISE PARAMETERS (Ta = 25 FREQ. (MHz) NF opt (dB) Ga (dB) topt C , 2.5 V to 8.0 V, lc = 0.3 mA to 10 mA (1) Gummel-Poon Model NE681 SERIES NE68130 NONLINEAR
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OCR Scan
Transistors BF 494 Transistor BJT 547 b transistor kf 469

2SC3583

Abstract: BJT BF 167 NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX , 3.25 8 0.42 -115 0.85 NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) OPT OPT NF , SERIES NE68130 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base
California Eastern Laboratories
Original
2SC3583 SOT-143 MARKING 557 sot323 9011 NPN transistor ne6810 mje 3009

NE68135

Abstract: transistor npn d 2078 (Solder Contains Lead) PART NUMBER NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 , NUMBER NE68100 NE68118-T1-A NE68119-T1-A NE68130-T1-A NE68133-T1B-A NE68135 NE68139-T1-A NE68139R-T1 , NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX 9.0 7.0 1.2 1.6 2.3 14 12 17 , +150°C. NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) 1.48 1.90 2.15 2.70 1.10 , NE68130 NONLINEAR MODEL SCHEMATIC CCBPKG CCB Q1 LCX LBX Base LB CCE Collector CBEPKG
California Eastern Laboratories
Original
transistor npn d 2078 transistor bf 494 common emitter bjt

LB 1639

Abstract: transistor TT 3043 ORDERING INFORMATION PART NUMBER NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 , MAX NE68130 2SC4227 30 MIN TYP MAX 7.0 1.2 1.6 2.3 14 12 17 9 50 13 15 9 100 250 80 160 1.0 1.0 , . Maximum storage temperature for the NE68135 is -65 to +150°C. NE68130 TYPICAL NOISE PARAMETERS (ta , ) Gummel-Poon Model 3-82 NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL
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OCR Scan
LB 1639 transistor TT 3043

814T

Abstract: NE68018 100 320 322 324 326 328 330 338 3 PIN SUPER MINI MOLD NE68030 NE68130 NE68530 NE68630 NE68730
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OCR Scan
814T NE46100 E944321 NE94433 E73412 E73416 E73435

UAA 1006

Abstract: manual* cygnus sl 5000 ) 2SC2759 13.0 NE85639E NE68133 12.0 NE68130 NE02139E NE68618 NE85633 NE68639 , NE856M23 8.5 NE68135 NE68132 NE68133 NE68130 NE68139E NE68118 NE68119 NE681M03 NE681M13 , 3 5 2.0 7.5 3 5 2.0 1.9 Fig.8 NE68130 20 10 1.5 150 3 7
NEC
Original
UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz NEC Ga FET marking code T79 PC1658G gaas fet T79 D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925

LB 1639

Abstract: IC 2030 PIN CONNECTIONS dB dB 9.0 NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP , for the NE68135 is -65 to +150°C. NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT , to 10 mA (1) Gummel-Poon Model NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC CCBPKG CCB
California Eastern Laboratories
Original
4558 L laser drive ic 3656 transistor "micro-x" "marking" 102
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