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    NE5520379AT1A Search Results

    NE5520379AT1A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE5520379A-T1A California Eastern Laboratories 3.2 V 3 W L&s Band Medium Power Silicon LD-MOSFET(261) Original PDF
    NE5520379A-T1A California Eastern Laboratories Transistor - Datasheet Reference Original PDF
    NE5520379A-T1A NEC 3.2 V Operation Silicon RF Power LDMOS FET for GSM/DCS Dual-Band Phone Transmission Amplifiers Original PDF
    NE5520379A-T1A NEC NECs 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. Original PDF
    NE5520379A-T1A-A California Eastern Laboratories NECs 3.2v 3w L/s Band Medium Power Silicon Ld-mosfet Original PDF
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    NE5520379AT1A Price and Stock

    California Eastern Laboratories (CEL) NE5520379A-T1A-A

    RF MOSFET LDMOS 3.2V 79A
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    DigiKey NE5520379A-T1A-A Cut Tape
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    Renesas Electronics Corporation NE5520379AT1A

    3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA NE5520379AT1A 13,000
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