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NE24283B Datasheet

Part Manufacturer Description PDF Type
NE24283B NEC Semiconductor Selection Guide Original
NE24283B NEC N-CHANNEL HJ-FET Original

NE24283B

Catalog Datasheet MFG & Type PDF Document Tags

nbc 3101

Abstract: ha 1758 ULTRA LOW NOISE NE24283B PSEUDOMORPHIC HJ FET FEATURES_ · VERY LOW NOISE , , Ids = 10 mA DESCRIPTION_ The NE24283B is a pseudom orphic Hetero- Junction , type but not for each specimen. NE24283B ABSOLUTE MAXIMUM RATINGS1 (T a=2 o O SYMBOLS V ds V , -1.0 -0.75 -0.50 -Q 25 0 Drain to Source Voltage, Vos (V) G GS (V) NE24283B , 2 0 m A ) -90" NE24283B Vds = 3 V, Ids = 20 mA FREQUENCY GHz 0.10 0.20 0.50 1.00 1.50 2.00
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OCR Scan
nbc 3101 ha 1758 PACKAGE OUTLINE 83B bs 246 fet IS12I IS12S21I

NE24283B

Abstract: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES NOISE FIGURE & , NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped , NFOPT1 GA1 P1dB G1dB IDSS PARAMETERS AND CONDITIONS NE24283B 83B UNITS Optimum , for each specimen. California Eastern Laboratories NE24283B ABSOLUTE MAXIMUM RATINGS1 (TA = 25 , 35 40 45 5 Gate to Source Voltage, VGS (V) 50 NE24283B TYPICAL COMMON SOURCE
NEC
Original

D2394

Abstract: transistor d1071 PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero , Published July 1997 N Printed in Japan SYMBOL MIN. © 1997 NE24283B ELECTRICAL , 30 NE24283B Gain Calculations ~S21~ MAG. = ~S21~ K= ~S12~ 2 ~S12~~S21~ ' = , 14 20 30 4 f - Frequency - GHz 3 NE24283B S-Parameters MAG. AND ANG. VDS = 2 V
NEC
Original
D2394 transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 P12778EJ1V0DS00

NEC k 2134 transistor

Abstract: nec k 3115 TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE24283B is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons , Figure Associated Gain SYMBOL bso Ig d o NE24283B MIN. TYP. 0.5 0.5 MAX. 10 10 70 -2 .0 , -L§SlL I $12 I NE24283B K 1 4- U l g -|S lll2 -|S 2 2 l£ 2 | Siz [ I S21 I MAG. = !S1 2 , - Frequency - GHz 3 NEC S-Parameters MAG. AND ANG. V ds NE24283B = 2 V , lo = 10 mA
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OCR Scan
P12778EJ1VODSOO NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587

PACKAGE OUTLINE 83B

Abstract: NE24283B urn · HERMETIC METAL/CERAMIC PACKAGE NE24283B NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds , NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped , NE24283B 83B TYP MAX 0.35 0.6 16.0 11.0 9.5 11.0 11.8 12.8 40 -0.8 60 0.5 750 0.7 Ga ' 10.0 , tuned for the "generic" type but not for each specimen. 1-17 NE24283B ABSOLUTE MAXIMUM RATINGS1 , gs (V) 1-18 Transconductance, g m (mS) ç NE24283B TYPICAL COMMON SOURCE SCATTERING
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OCR Scan

NE24283B

Abstract: ULTRA LOW NOISE NE24283B PSEUDOMORPHIC HJ FET FEATURES NOISE FIGURE & ASSOCIATED GAIN vs , = 200 µm · HERMETIC METAL/CERAMIC PACKAGE DESCRIPTION The NE24283B is a pseudomorphic , IDSS PARAMETERS AND CONDITIONS NE24283B 83B UNITS Optimum Noise Figure at VDS = 2 V, IDS = , . California Eastern Laboratories NE24283B ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS , Drain Current, IDS (mA) 45 50 Associated Gain, GA (dB) 1.4 250 NE24283B TYPICAL
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Original

transistor d 2389

Abstract: / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the (Unit : mm) hetero junction to create , 1997 E orp ratio NEC NE24283B ELECTRICAL CHARACTERISTICS (T a = 2 5 ° C ) CHARACTERISTIC , NE24283B Gain Calculations M SG. = i ^ i K = I Sl2| MAG. = - L § d _ I Sid 1 + 1 A , FIGURE, ASSOCIATED GAIN vs. FREQUENCY f - Frequency - GHz 3 NEC NE24283B S-Parameters
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OCR Scan
transistor d 2389 P12778EJ1V0D C10535E

NF 831

Abstract: NE24283B NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 m A HIGH ASSOCIATED GAIN , /CERAMIC PACKAGE co DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the , . Frequency, f (GHz) ELECTR ICA L CH ARACTERISTICS SYMBOLS NF 0 PT1 < t a = 25°c) NE24283B 83B UNITS , . 1-9 NE24283B ABSOLUTE MAXIMUM RATINGS 1 (Ta = 25°c ) SYMBOLS V ds Vgso Ids Igrf T ch T stg Pt , 1.5 30 Drain to Source Voltage, V ds (V) Drain Current, Ids (mA) 1-10 NE24283B
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OCR Scan
NF 831
Abstract: NE24283B NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids r 10 mA 24 HIGH ASSOCIATED , HERMETIC METAL/CERAMIC PACKAGE 15 O DESCRIPTION The NE24283B is a pseudom orphic Hetero-Junction , cj PARTNUMBER PACKAGE OUTLINE SYMBOLS N F o p t1 NE24283B 83B UNITS MIN TYP MAX PARAMETERS , go-no-go" screening tuned for the "generic" type but not for each specimen 1-8 NE24283B ABSOLUTE , Drain Current, Ids (mA) Drain to Source Voltage, V ds (V) 1 -9 NE24283B TYPICAL COMMON SOURCE -
OCR Scan

NE24283B

Abstract: NE76083A Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 83A/B 1.88 ± 0.3 S Dot A 0.5 ± 0.1 1.88 ± 0.3 G D 4.0 MIN (ALL LEADS) Dot B S 1.0 ± 0.1 1.45 MAX +0.07 0.1 -0.03 PART NUMBER MARKING DOT A DOT B NE24283B BLUE BLUE NE71383B RED BLUE NE76083A GREEN - EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN
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Original

NE329

Abstract: Low Noise GaAs FETs Typical Specifications @ Ta = 25°C Part NE24200 NE32400 NE33200 |N EW ^ I new ^ IN E W ^ IN E W ^ IN E W ^ NE325S01 NE334S01 NE34018 NE425S01 NE434S01 NE24283B NE32484A NE32584C NE33284A NE42484A IN E W ^ NE32984D 0.25 0.25 0.3 0.2 0.3 0.6 0.2 0.3 0.25 0.25 0.2 0,3 0.3 0.2 200 280 400 200 280 200 200 200 280 200 200 0.1 to 40 0.1 to 40 0.1 to 18 O.t to 14 0.1 to 14 0.1 to 6 0.1 to 14 0.1 to 14 0.1 to 20 1.0 to 14 1.0 to 18 0.1 to 14 0.1 to 14 1.0 to 18 12 12 12 12 4 2 12 4
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OCR Scan
NE329 84AS1 84CS1

ne71084

Abstract: GaAs MESFET Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber NE' 4200 NE 32400 NE S3200 NE87300 NE '1000 NE76000 NE '6100 NE24283B (Min) 0.25 0.25 0.3 0.3 0.3 0.3 1.0 0.25 200 200 280 280 280 280 400 200 1.0 to 40 1.0 to 40 0.1 to 18 0.1 to 18 0.1 to 18 0.1 to 18 0.1 to 12 1.0 to 20 Gita Frequency Range Test | Frequency C6HZ) 12 12 12 , and reel. 1-3 Alphanumeric Index 1 Small Signal GaAs FETs PART NUMBER * NE24200 * NE24283B
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OCR Scan
ne71084 GaAs MESFET NE4200 NE25139 NE71000 71083 12484A1 2684A1 NE33284A1 84AS2

NEC Ga FET marking L

Abstract: tamagawa Rank Function Form Package Marking NE24283B(L) â'" Low Noise HJFET packaged 83B 242 NE24200(L) â , . Max. NE24283B(L) NE24200(L) IDSS VDS=2V,VGS=0V 15 70 mA ± 10% gm VDS=2V,IDS=10mA 45 - mS Â
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OCR Scan
GET-30749 NE674 NEC Ga FET marking L tamagawa gaas fet marking B NE272 mmic amplifier marking code N5 NE23383B NE67400 A-120 MIL-S-19500 MIL-PRF-19500 PG101B

ne71084

Abstract: NE76084 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 NE76083A NE32484A NE32584C NE32684A1 NE33284A NE42484A NE71084 NE76084 NE76184A 0.25 0.25 0.3 0.3 0.3 0.3 1.0 0.28 .03 .03 .03 0.25 200 200 280 2« ) 280 280 400 200 280 280 280 1.0 to 40 1.OtO 40 0.1 to 18 12 12 12 12 12 12 4 12 12 12 12 2.0 2.0 2.0 3.0 3.0 3.0 3.0 2.0 3.0 10 10 10 0.6 0.6 0.75 1.4 1.5 11.0 11.0 10.5 10.0 9.0 9.0 12.0
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OCR Scan
ne72089 NE72000 NE32584 NE32684A 84CS2 NE76038 NE25339

LORB

Abstract: NE2720 Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 NE334S01 NE34018 NE425S01 NE429M01 NE434S01 NE23383B NE24283B NE67483B NE32484A NE32584C NE33284A NE32984D Sat« Gate Length W idth (Mm) ftim ) 0.3 0.25 0.20 0.30 0.25 0.20 0.20 0.3 0.2 0.2 0.3 0.6 0.2 0.3 0.3 0.3 0.25 0.3 0.25 0.2 0.3 0.2 280 200 200 280 200
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OCR Scan
LORB NE2720 NE25118

E7138

Abstract: nec microwave NE434S01 NE24283B NE32484A NE32584C NE33284A NE 42484A NE32984D 0.6 0.2 0.3 0.25 0.25 0.2 0.3 0.3 0.2
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OCR Scan
E7138 nec microwave 84/84A 84AS/84CS

uPD16305

Abstract: uPD63724A µPA828 µPA831 µPA832 µPA833 µPA834 µPA835 µPA836 µPA840 NE23383B NE24200 NE24283B NE27200 NE3210S01
NEC
Original
uPD16305 uPD63724A UPC5023 upc5024 uPD65656 UPC2710 PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016

uPD72002-11

Abstract: uPD16305 NE23383B NE24200 NE24283B NE27200 NE3210S01 NE32484A NE32500 NE32584C NE325S01 NE32900 NE329S01 NE33284A
NEC
Original
uPD72002-11 uPC1237 upc1701 2sb1099 2SD1392 uPD78F0841 PD750104 PD750106 PD750108 PD75P0116 PD750064 PD750066

2SK2396

Abstract: PC2763 GHz NE24200 NE24283B HJFET HJFET 2 2 10 10 12000 NF = 0.6 dB 83B , NE425S01 NE42484C 11 NE32484A NE24283B NE4210M01 NE42484A 10 NE429M01 0.3 0.4
NEC
Original
PC2763 PC3210 PC2711 2SK2396 pc1658 ne27283 2SC3545 2SC3357 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T

nf025

Abstract: NE27283 800­3000 4000­12000 Part Number NE674 NE71300 NE71383B NE76118 NE23383B NE24200 NE24283B NE27200 NE32500 , ) NE32584C NE325S01 12 NE425S01 NE42484C 11 NE32484A NE24283B NE4210M01 NE42484A 10
NEC
Original
nf025 upc27 x-band power transistor 100W P147D NE42484 uPG508 950MH 500MH PC3206GR PC3211GR PC2710 PC2709
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