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Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.6027 Price Each : $0.6087
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.6104 Price Each : €0.6135
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 1,413 Best Price : $0.7930 Price Each : $1.61
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 12,000 Best Price : $0.6830 Price Each : $0.7110
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 7,930 Best Price : $0.7930 Price Each : $1.61
Part : NDT456P Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : 44,000 Best Price : $0.6350 Price Each : $0.6350
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 84 Best Price : $0.74 Price Each : $0.91
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 378 Best Price : - Price Each : -
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 105 Best Price : £0.61 Price Each : £0.9720
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 3,790 Best Price : £0.61 Price Each : £0.88
Part : NDT456P Supplier : Fairchild Semiconductor / ON Semiconductor Manufacturer : Chip1Stop Stock : 4,000 Best Price : $0.6213 Price Each : $0.6213
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.8320 Price Each : $0.8320
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 9,217 Best Price : $0.80 Price Each : $2.0560
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 9,217 Best Price : $0.80 Price Each : $2.0560
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 10,213 Best Price : £0.5620 Price Each : £1.16
Shipping cost not included. Currency conversions are estimated. 

NDT456P Datasheet

Part Manufacturer Description PDF Type
NDT456P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P Toshiba Power MOSFETs Cross Reference Guide Original
NDT456P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan
NDT456PJ23Z Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P_NL Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original

NDT456P

Catalog Datasheet MFG & Type PDF Document Tags

NDT456P

Abstract: December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description , 1b) 1.3 (Note 1c) TJ,TSTG S NDT456P - Pulsed PD G TA = 25°C unless otherwise , , Junction-to-Case (Note 1) 12 °C/W © 1998 Fairchild Semiconductor Corporation NDT456P Rev. F , nC NDT456P Rev. F Electrical Characteristics (T Symbol A = 25°C unless otherwise noted , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT456P Rev. F
Fairchild Semiconductor
Original

FAJ 40

Abstract: Diode FAJ PAIRCHILD ¡MICGNDUCTDR tm December 1998 NDT456P P-Channel Enhancement Mode Field Effect , -223* (J23Z) Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter NDT456P Units Vâ , , Junction-to-Ambient (Noteia) 42 °C/W 'eJc Thermal Resistance, Junction-to-Case (Notai) 12 °C/W NDT456P Rev , lD = -7.5 A, VGS = -10 V 5 nC Gate-Drain Charge 12 nC NDT456P Rev. F This , %. NDT456P Rev. F This Material Copyrighted By Its Respective Manufacturer Typical Electrical
-
OCR Scan
FAJ 40 Diode FAJ FAJ 42 RO00 Diode FAJ package
Abstract: December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description , (Note 1b) 1.3 (Note 1c) TJ,TSTG S NDT456P - Pulsed PD G TA = 25°C unless , Corporation NDT456P Rev. F Electrical Characteristics (T Symbol A = 25°C unless otherwise noted , = 12 â"¦ 130 ns 47 67 nC 5 nC 12 nC NDT456P Rev. F Electrical , letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT456P Rev. F Typical Fairchild Semiconductor
Original

CBVK741B019

Abstract: F63TNR December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description , 1b) 1.3 (Note 1c) TJ,TSTG S NDT456P - Pulsed PD G TA = 25°C unless otherwise , , Junction-to-Case (Note 1) 12 °C/W © 1998 Fairchild Semiconductor Corporation NDT456P Rev. F , nC NDT456P Rev. F Electrical Characteristics (T Symbol A = 25°C unless otherwise noted , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDT456P Rev. F
Fairchild Semiconductor
Original
CBVK741B019 F63TNR F852 PN2222A

0011914

Abstract: NDT456P 0 National S e mi con duc tor" July 1996 NDT456P P-Channef Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. And withstand , Ratings T. = 25°C unless otherwise noted Symbol Parameter NDT456P Units Vâ'ž Drain-Source Voltage
-
OCR Scan
0011914 LSD113G QG40133 S01130 004D13H

NDT453N

Abstract: H834P 0.05 0.0S5 0.18 0.3 ' 6.045 6,09 P-Channel NDT456P NDT454P NDT452AP -3 0 _ -30 -30 -7.5_
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OCR Scan
NDT453N NDC652P FDC6321C 6322L NDH8501N H834P T-223 NDC631N FDC6303N FDC6301N NDC651N NDC7002N

NDT456P

Abstract: NDS456P N July 1996 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are , Symbol Parameter NDT456P Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source
National Semiconductor
Original
NDS456P

NDT453N

Abstract: NDT2955 SOT223 1.8 2.8 NDT2955 -60 Single 0.3 0.5 - - 11 2.5 3 NDT456P -30
Fairchild Semiconductor
Original
FDT439N NDT451AN FDT459N FDT457N HUF75309T3ST HUFA75309T3ST NDT2955 SOT223 FDT3612 IRFM120A
Abstract: SEMICONDUCTOR t m NDT456P P-Channel Enhancement Mode Field Effect Transistor Features General Description Power SO T P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to m inim ize on-state resistance and provide superior switching performance. T hese , bsolute M axim um Ratings Symbol TA = 25 °C unless otherwise noted Parameter NDT456P Units -
OCR Scan

mosfet cross reference

Abstract: SMP40N06 NDS8947 FDS8947A SO-8, Dual P NDT456P NDT456P SOT-223, P NDS8958 FDS8958A SO
-
Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

AN232-07

Abstract: DLP-USB245M suitable device could be a Fairchild NDT456P or equivalent. This configuration is suitable for powering
-
OCR Scan
DLP-USB245M AN232-07 AN232-03 VID_0403 3V30UT 1001P DLP-USB232M 93C46

BSS138 NXP

Abstract: FDC642P NDS335N NDS351AN NDS355AN NDS7002A NDT451AN NDT452AP NDT454P NDT456P NTA4001NT1G NTA4153NT1G
NXP Semiconductors
Original
PMV65XP PMV60EN BSH103 BSH201 BSS138 NXP FDC642P 2n7002 nxp BSS123 NXP AO3401 M3D109 SC-73 SC-62 STT4PF20V STT5NF20V STT5PF20V

DLPUSB232M

Abstract: dlpdesign to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This
DLP Design
Original
FT232BM FT8U232AM DLPUSB232M dlpdesign 3.3v TTL RS422 Level Converter 5V RS422 USB usb to serial TTL RS232 Level Converter RS232 RS422/RS485 RS485 RS422

DLP-USB232M

Abstract: USB232 to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This
DLP Design
Original
DLP-USB232M-G USB232

DLP-USB245M

Abstract: 93C46 programmer usb external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This configuration
DLP Design
Original
FT245BM 93C46 programmer usb P-Channel MOSFET 600v AN232-05 USB245 USB245M

DLP-USB232M

Abstract: usb rs232 control the power to external logic circuits. A suitable device could be a Fairchild NDT456P or
DLP Design
Original
usb rs232 USB232M
Abstract: the power to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent DLP Design
Original

P-Channel MOSFET 600v

Abstract: usb232m to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This
DLP Design
Original

DLP-USB232M

Abstract: FT8U232AM to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This
DLP Design
Original
USB 2.0 HUB RS232 TTL self powered

FT8U232AM

Abstract: 3.3v TTL RS422 Level Converter to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This
DLP Design
Original
FT232BL FT232BL USB UART Circuit Application Note usb bus usb led
Abstract: NDT456P or equivalent. This coniguration is suitable for powering external logic where the normal supply DLP Design
Original
DLP-USB245M-G

DLP-USB245M-G

Abstract: 93C46 external logic circuits. A SLEEP# suitable device could be a Fairchild NDT456P or equivalent. This
DLP Design
Original
usb eeprom programmer schematic Bi-Directional P-Channel Bi-Directional P-Channel mosfet
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