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Part Manufacturer Description Datasheet BUY
NDT456P Fairchild Semiconductor Corporation P-Channel Enhancement Mode Field Effect Transistor, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL visit Digikey

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Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : 4,000 Best Price : €0.5730 Price Each : €0.5939
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : 36,000 Best Price : $0.6198 Price Each : $0.6441
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 8,000 Best Price : $0.6060 Price Each : $0.7050
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 1,687 Best Price : $0.7490 Price Each : $1.73
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 996 Best Price : $1.30 Price Each : $1.91
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.5850 Price Each : $0.5850
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Future Electronics Stock : 4 Best Price : $0.82 Price Each : $0.82
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 84 Best Price : $0.74 Price Each : $0.91
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 378 Best Price : - Price Each : -
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 1,730 Best Price : £0.5340 Price Each : £0.9720
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 4,000 Best Price : $0.4750 Price Each : $0.4750
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.8320 Price Each : $0.8320
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,284 Best Price : $0.83 Price Each : $2.2560
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,284 Best Price : $0.83 Price Each : $2.2560
Part : NDT456P Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 5,807 Best Price : £0.5610 Price Each : £1.14
Shipping cost not included. Currency conversions are estimated. 

NDT456P Datasheet

Part Manufacturer Description PDF Type
NDT456P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P Toshiba Power MOSFETs Cross Reference Guide Original
NDT456P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Scan
NDT456PJ23Z Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
NDT456P_NL Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original

NDT456P

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description , 1b) 1.3 (Note 1c) TJ,TSTG S NDT456P - Pulsed PD G TA = 25°C unless otherwise , , Junction-to-Case (Note 1) 12 °C/W © 1998 Fairchild Semiconductor Corporation NDT456P Rev. F , nC NDT456P Rev. F Electrical Characteristics (T Symbol A = 25°C unless otherwise noted , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. NDT456P Rev. F Fairchild Semiconductor
Original
Abstract: PAIRCHILD ¡MICGNDUCTDR tm December 1998 NDT456P P-Channel Enhancement Mode Field Effect , -223* (J23Z) Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter NDT456P Units Vâ , , Junction-to-Ambient (Noteia) 42 °C/W 'eJc Thermal Resistance, Junction-to-Case (Notai) 12 °C/W NDT456P Rev , lD = -7.5 A, VGS = -10 V 5 nC Gate-Drain Charge 12 nC NDT456P Rev. F This , %. NDT456P Rev. F This Material Copyrighted By Its Respective Manufacturer Typical Electrical -
OCR Scan
FAJ 40 Diode FAJ FAJ 42 Diode FAJ package RO00
Abstract: December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description , (Note 1b) 1.3 (Note 1c) TJ,TSTG S NDT456P - Pulsed PD G TA = 25°C unless , Corporation NDT456P Rev. F Electrical Characteristics (T Symbol A = 25°C unless otherwise noted , = 12 â"¦ 130 ns 47 67 nC 5 nC 12 nC NDT456P Rev. F Electrical , letter size paper 2. Pulse Test: Pulse Width < 300Âus, Duty Cycle < 2.0%. NDT456P Rev. F Typical Fairchild Semiconductor
Original
Abstract: December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description , 1b) 1.3 (Note 1c) TJ,TSTG S NDT456P - Pulsed PD G TA = 25°C unless otherwise , , Junction-to-Case (Note 1) 12 °C/W © 1998 Fairchild Semiconductor Corporation NDT456P Rev. F , nC NDT456P Rev. F Electrical Characteristics (T Symbol A = 25°C unless otherwise noted , : 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. NDT456P Rev. F Fairchild Semiconductor
Original
CBVK741B019 F63TNR F852 PN2222A
Abstract: 0 National S e mi con duc tor" July 1996 NDT456P P-Channef Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. And withstand , Ratings T. = 25°C unless otherwise noted Symbol Parameter NDT456P Units Vâ'ž Drain-Source Voltage -
OCR Scan
0011914 LSD113G QG40133 S01130 004D13H
Abstract: 0.05 0.0S5 0.18 0.3 ' 6.045 6,09 P-Channel NDT456P NDT454P NDT452AP -3 0 _ -30 -30 -7.5_ -
OCR Scan
NDT453N NDC652P FDC6321C 6322L H834P T-223 NDC631N FDC6303N FDC6301N NDC651N NDC7002N
Abstract: N July 1996 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are , Symbol Parameter NDT456P Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source National Semiconductor
Original
NDS456P
Abstract: 1.8 2.8 NDT2955 -60 Single 0.3 0.5 - - 11 2.5 3 NDT456P -30 Fairchild Semiconductor
Original
FDT439N NDT451AN FDT459N FDT457N HUF75309T3ST HUFA75309T3ST NDT2955 SOT223 NDT3055 IRFM120A
Abstract: SEMICONDUCTOR t m NDT456P P-Channel Enhancement Mode Field Effect Transistor Features General Description Power SO T P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to m inim ize on-state resistance and provide superior switching performance. T hese , bsolute M axim um Ratings Symbol TA = 25 °C unless otherwise noted Parameter NDT456P Units -
OCR Scan
Abstract: NDS8947 FDS8947A SO-8, Dual P NDT456P NDT456P SOT-223, P NDS8958 FDS8958A SO -
Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SI9952DY SMP75N06-08 SMP60N03-10L IRFZ44 TO-263 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A
Abstract: suitable device could be a Fairchild NDT456P or equivalent. This configuration is suitable for powering -
OCR Scan
DLP-USB245M AN232-07 AN232-03 VID_0403 3V30UT 1001P DLP-USB232M 93C46
Abstract: NDS335N NDS351AN NDS355AN NDS7002A NDT451AN NDT452AP NDT454P NDT456P NTA4001NT1G NTA4153NT1G NXP Semiconductors
Original
PMV65XP PMV60EN BSH103 BSH201 BSS138 NXP FDC642P 2n7002 nxp BSS123 NXP AO3401 M3D109 SC-73 SC-62 STT4PF20V STT5NF20V STT5PF20V
Abstract: to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This DLP Design
Original
FT232BM FT8U232AM 3.3v TTL RS422 Level Converter 5V RS422 USB usb to serial usb serial converter USB 2.0 HUB TTL RS232 Level Converter RS232 RS422/RS485 RS485 RS422
Abstract: to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This DLP Design
Original
DLP-USB232M-G
Abstract: external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This configuration DLP Design
Original
FT245BM 93C46 programmer usb AN232-05 P-Channel MOSFET 600v USB245 USB245M
Abstract: control the power to external logic circuits. A suitable device could be a Fairchild NDT456P or DLP Design
Original
usb rs232 USB232M
Abstract: the power to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent DLP Design
Original
Abstract: to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This DLP Design
Original
Abstract: to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This DLP Design
Original
RS232 TTL self powered
Abstract: to external logic circuits. A suitable device could be a Fairchild NDT456P or equivalent. This DLP Design
Original
FT232BL usb led usb bus
Abstract: NDT456P or equivalent. This coniguration is suitable for powering external logic where the normal supply DLP Design
Original
DLP-USB245M-G
Abstract: external logic circuits. A SLEEP# suitable device could be a Fairchild NDT456P or equivalent. This DLP Design
Original
Bi-Directional P-Channel Bi-Directional P-Channel mosfet usb eeprom programmer schematic
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