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Part : NDS8434A Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 38,490 Best Price : $0.40 Price Each : $0.49
Part : NDS8434A Supplier : Fairchild Semiconductor Manufacturer : ComSIT Stock : 1,695 Best Price : - Price Each : -
Part : NDS8434A-NL Supplier : Fairchild Semiconductor Manufacturer : Chip One Exchange Stock : 1,165 Best Price : - Price Each : -
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NDS8434A Datasheet

Part Manufacturer Description PDF Type
NDS8434A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Tra Original
NDS8434A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original
NDS8434A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original
NDS8434A Toshiba Power MOSFETs Cross Reference Guide Original
NDS8434A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Scan
NDS8434A_NL Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original

NDS8434A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: R A I R C H I I - D SEMICONDUCTOR March 1997 tm NDS8434A Single P-Channel , Parameter NDS8434A Units VD ss Drain-Source Voltage -20 V ^GSS Gate-Source Voltage , NDS8434A Ftev.D Electrical Characteristics (ta= 25 °c u n le s s o th e rw is e Symbol Parameter , A, VG = -4.5 V S 3.8 nC 8.2 nC NDS8434A Rev.D Electrical Characteristics (Ta = , , Duty Cycle < 2.0%. NDS8434A Rev.D Typical Electrical Characteristics 0 -0.5 -1 -1.5 V DS -
OCR Scan

NDS8434A

Abstract: March 1997 NDS8434A Single P-Channel Enhancement Mode Field Effect Transistor General , NDS8434A Units Drain-Source Voltage -20 V Gate-Source Voltage ±8 V -7.8 A , Thermal Resistance, Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDS8434A Rev.D , 3.8 nC 8.2 nC NDS8434A Rev.D Electrical Characteristics (TA = 25°C unless otherwise , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS8434A Rev.D Typical Electrical
Fairchild Semiconductor
Original

NDS8434A

Abstract: March 1997 NDS8434A Single P-Channel Enhancement Mode Field Effect Transistor General , NDS8434A Units Drain-Source Voltage -20 V Gate-Source Voltage ±8 V -7.8 A , Thermal Resistance, Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDS8434A Rev.D , -4.5 V 3.8 nC 8.2 nC NDS8434A Rev.D Electrical Characteristics (TA = 25°C unless , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS8434A Rev.D Typical Electrical
Fairchild Semiconductor
Original

CBVK741B019

Abstract: F011 March 1997 NDS8434A Single P-Channel Enhancement Mode Field Effect Transistor General , NDS8434A Units Drain-Source Voltage -20 V Gate-Source Voltage ±8 V -7.8 A , Thermal Resistance, Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDS8434A Rev.D , 3.8 nC 8.2 nC NDS8434A Rev.D Electrical Characteristics (TA = 25°C unless otherwise , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS8434A Rev.D Typical Electrical
Fairchild Semiconductor
Original
CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

mosfet cross reference

Abstract: SMP40N06 NDS8434A SO-8, P BS170 BS170 TO-92, N IRF7205 FDS9435A SO-8, P Package SO-8, P , -8, N IRF520 NDP410A TO-220, N IRF7404 NDS8434A SO-8, P IRF520N NDP510A TO , SO-8, P MTP50N06E NDB6060 TO-263, N MMSF3203 NDS8434A SO-8, P MTP50N06EL , NDT014L SOT-223, N NDS8434 NDS8434A SO-8, P NDT2955 NDT2955 SOT-223, P NDS8434A NDS8434A SO-8, P NDT3055 NDT3055 SOT-223, N NDS8435 NDS8435A SO-8, P NDT3055L
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 2N7002 IRF7204 BS270

NDSB434A

Abstract: 434A F A IR C H IL D SEM IC D N D U C TD R tu M . . qq-7 M arch 1997 NDS8434A Single P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect Features -7.8 A, -20 V. = 0.024 O @ VG S = -4.5 V R ^ , = 0.032 0 @ V G S = -2.5V. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high , Drain Current - Continuous - Pulsed Maximum Power Dissipation (N ote 1 a) NDS8434A -20 ±8 -7.8 -25
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OCR Scan
NDSB434A 434A

NDS8434A

Abstract: FAIRCHILD MICDNDUCTOR â"¢ March 1997 NDS8434A Single P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchiid's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices , Symbol Parameter NDS8434A Units VDSS Drain-Source Voltage -20 V ^GSS Gate-Source Voltage ±8 V "d
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OCR Scan
DS8434A

Complementary MOSFET Half Bridge

Abstract: NDS351AN Fairchild Sem iconductor Discrete Power and Signal Technologies Selection Guides Surface Mount Power MOSFETs Part Num ber SO-B N -C h a n n e t ND S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 NDS9956A NDS8961 NDS9955 NDS9959 NDS9945 NDS9957 P -C h a n n e l NDS8434A NDS8434Î NDS8433 NDS8934 MDS9933A NDS9947 NDS8435A NDS8435Î NDS9435A NDS8947 NDS9400A NDS9953A NDS9407 NDS9948 v3 S IV) _ J « L _ 'd (A) " P i ' ' (W ) ¡Remarks I I
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OCR Scan
NDS331N NDS351AN Complementary MOSFET Half Bridge 601lt NDS356 MDs9933 NQS8426 NDS335N NDS355AN NDS355N

HTGB

Abstract: FDS*35A FDS9933A FDS9953A HJS1_BHJ002E NDS8410A NDS8434A NDS8936_F40 NDS9407 NDS9435A NDS9936 NYS1_BNY001A
Fairchild Semiconductor
Original
FDS3670 FDS4935A FDS6675A FDS4953 FDS6676 HTGB FDS*35A FDS*6609A fds4559 fds5680 fds6900S FDS6975 FDS6984S FDS6990S FDS8333C FDS8928A FDS8947A

SSP35n03

Abstract: bc417 5.5V J 10 ¡i F NDS8434A V0UT = 2-5v ® 1A Precision Voltage Reference with Force and Sense Output
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

R02C sot23

Abstract: sot23-5 package marking 101 38. Polyswitch Warning and Fault Detection Circuit RSHUNT 0.02W Load Q2 NDS8434A R1 100kW
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OCR Scan
LM4130 R02C sot23 sot23-5 package marking 101 Marking jst SOT23 R02A VBI SOT23-5 sot23-5 package marking

M29W64OD

Abstract: ADSP-DM203 NDS8434A +5V Supply R7 1kW Q1 2N3904 VS+ OUT R5 100kW R3 14kW CMP1 INCMP1 IN+ CMP2 IN+ CMP2 INCBYPASS
Analog Devices
Original
M29W64OD ADSP-DM203 abe310 MBGA256 Xilinx XC2S150E how to wire vga to rca jacks ADSP-BF561 LED12-5 LED20-13

MT48LC4M16ATG-75

Abstract: flashlink FL-101B and Fault Detection Circuit RSHUNT 0.02W Load Q2 NDS8434A R1 100kW +5V Supply R7 1kW
Analog Devices
Original
ADSP-BF533 MT48LC4M16ATG-75 flashlink FL-101B 805 18pf mt48lc16m16 tsop54 CR21-106-J-T MT48LC16M16 LED11

M29W64OD

Abstract: C04310 Circuit RSHUNT 0.02W Load R1 100kW Q2 NDS8434A +5V Supply R7 1kW VS+ OUT R5 100kW R3 14kW CMP1 INCMP1
Analog Devices
Original
C04310 TRANSISTOR C144 BUF C145 CR1206 vishay dip4 Microchip N4 SOT23-6 SW10-11
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