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Part : NDS8410A Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 219,234 Best Price : $0.81 Price Each : $0.81
Part : NDS8410A Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 12 Best Price : - Price Each : -
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NDS8410 Datasheet

Part Manufacturer Description PDF Type
NDS8410 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 10A 8-SOIC Original
NDS8410 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410 National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410 Toshiba Power MOSFETs Cross Reference Guide Original
NDS8410 National Semiconductor Single N-Channel Enhancement M ode Field Effect Transistor Scan
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410A Fairchild Semiconductor Single 30V N-Channel PowerTrench MOSFET Original
NDS8410A Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410A Toshiba Power MOSFETs Cross Reference Guide Original
NDS8410A National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan
NDS8410A_NL Fairchild Semiconductor 30V Single N-Channel PowerTrench MOSFET Original
NDS8410S Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410S National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original
NDS8410S Toshiba Power MOSFETs Cross Reference Guide Original
NDS8410S National Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan

NDS8410

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: February 1996 N NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , = 25°C unless otherwise noted Sym b ol P aram eter NDS8410 U nits v DSS V , NDS8410 Rev B2 ELECTRICAL CHARACTERISTICS S ym b ol (T a P aram eter = 25°C unless otherwise , 15 V, S t = 10 a , VG = 1 0 V S 5.6 nC 14 nC NDS8410 Rev B2 ELECTRICAL , W idth < 3 0 0 p s , Duty Cycle < 2.C NDS8410 Rev B2 Typical Electrical Characteristics 0 -
OCR Scan

J31C

Abstract: NDS8410 N February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , surface mount package. Absolute Maximum Ratings ta = 25 cunless otherwise noted Symbol Parameter NDS8410 , , Junction4o-Case (Note i) 25 °aw NDS8410 Rev B2 This Material Copyrighted By Its Respective Manufacturer , nC Gate-Drain Charge 14 nC NDS8410 Rev B2 This Material Copyrighted By Its Respective , .C NDS8410 Rev B2 This Material Copyrighted By Its Respective Manufacturer Typical Electrical
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OCR Scan
J31C 0D33347

NDS8410

Abstract: February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , NDS8410 Drain Current - Continuous 30 - Pulsed V ± 10 A ± 50 (Note 1a) 2.5 , , Junction-to-Case (Note 1) 25 °C/W © 1997 Fairchild Semiconductor Corporation NDS8410 Rev B2 , = 10 A, VGS = 10 V 14 80 ns 46 60 nC 5.6 nC 14 nC NDS8410 Rev B2 , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS8410 Rev B2 Typical Electrical
Fairchild Semiconductor
Original

NDS8410

Abstract: N February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , noted Symbol Parameter NDS8410 Units VDSS Drain-Source Voltage 30 V VGSS , Thermal Resistance, Junction-to-Case NDS8410 Rev B2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , , VGS = 10 V 5.6 nC 14 nC NDS8410 Rev B2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , Cycle < 2.0%. NDS8410 Rev B2 Typical Electrical Characteristics 3 VGS =10V 6.0 5.0 4.5
National Semiconductor
Original

CBVK741B019

Abstract: F011 February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General , NDS8410 Drain Current - Continuous 30 - Pulsed V ± 10 A ± 50 (Note 1a) 2.5 , , Junction-to-Case (Note 1) 25 °C/W © 1997 Fairchild Semiconductor Corporation NDS8410 Rev B2 , = 10 A, VGS = 10 V 14 80 ns 46 60 nC 5.6 nC 14 nC NDS8410 Rev B2 , paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS8410 Rev B2 Typical Electrical
Fairchild Semiconductor
Original
CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Abstract: FAIRCHILD SEM ICONDUCTO R TM February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance , Range (N o te1a ) NDS8410 30 20 ±10 ±50 2.5 1.2 1 -55 to 150 °C W Units V V A THERMAL CHARACTERISTICS -
OCR Scan
NDSS41

NDS8410

Abstract: 0 Na tional Semiconductor" May 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices , Symbol Parameter NDS8410 Units Voss Drain-Source Voltage 30 V VGSS Gate-Source Voltage 20 V 'd Drain
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0-020Q S01130

FZ 44 NS

Abstract: R11C10 ) OV FET FET FOSC : LM2641 FET NDS8410 (VGS) 5V - VDIODE 4.3V NDS8410 VGS 24nC A 5 LM2641 SS SS
National Semiconductor
Original
LM2641MTC-ADJ FZ 44 NS R11C10 593D IGD ldi C819 NAT2000 DS100949 002/V MTC28

R11C10

Abstract: LM2630 ) FOSC OV FET FET : LM2640 FET NDS8410 (VGS) 5V - VDIODE 4.3V NDS8410 VGS 24nC A 5 LM2640 SS
National Semiconductor
Original
LM2630 LM2640MTC-ADJ

fqp60n06

Abstract: SSH6N80 NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410 NDS8410A NDS8410S NDS8936 NDS8947 NDS9410A NDS9410S NDS9936 NDS9953A NDS9956A NDT014 NDT014L
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L
Abstract: . Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VD,ODE = 4.3V. Referring to the NDS8410 data sheel, 1he curve Gate Charge -
OCR Scan

LM2641

Abstract: LM2641MTC-ADJ shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge
National Semiconductor
Original
Abstract: ) Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Texas Instruments
Original
SNVS019B ISO/TS16949

mosfet cross reference

Abstract: SMP40N06 -8, Comp N/P NDS8410 FDS6690A SO-8, N NDS9959 NDS9959 SO-8, Dual N NDS8410A NDS8410A SO-8, N NDT014 NDT014 SOT-223, N NDS8426A NDS8426A SO-8, N NDT014L
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 irf1010e equivalent 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

LM2640

Abstract: LM2640MTC-ADJ typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Characteristics shows that the
National Semiconductor
Original

CDRH125-100MC

Abstract: LM2640 shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge
National Semiconductor
Original
CDRH125-100MC
Abstract: ) Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V â' VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Texas Instruments
Original

IGD ldi

Abstract: . Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge
National Semiconductor
Original
Abstract: . Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge National Semiconductor
Original
SNVS040A

LM2641

Abstract: LM2641MTC-ADJ frequency. Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) Is 5V - VD|ode = 4.3V. Referring to the NDS8410 data sheet, the curve Gate
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OCR Scan

motorola fet databook

Abstract: 593D Application Notebook Desktop Q1 and Q2 Fairchlld NDS8410; Sillconix SÌ4410DY; or Motorola MTD20N03HDL
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motorola fet databook 594D LM2630MTC-ADJ MTC20

960HZ

Abstract: 593D NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Characteristics shows that the gate charge for this value of
National Semiconductor
Original
960HZ

LM2641

Abstract: LM2641MTC-ADJ Example: As shown in the typical application, if the FET NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge
National Semiconductor
Original
Abstract: frequency. Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate National Semiconductor
Original
SNVS019A

LM2641

Abstract: LM2641MTC-ADJ NDS8410 is used with the LM2641, the turn-on gate voltage (VGS) is 5V - VDIODE = 4.3V. Referring to the NDS8410 data sheet, the curve Gate Charge Characteristics shows that the gate charge for this value of
National Semiconductor
Original

LM2640MTC-ADJ

Abstract: NDS8410 frequency. Example: As shown in the typical application, if the FET NDS8410 is used with the LM2640, the turn-on gate voltage (VGS) Is 5V - VD|ode = 4.3V. Referring to the NDS8410 data sheet, the curve Gate
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OCR Scan
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