NDS356P - Datasheet Archive

 

NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1.1 A, -20V. RDS(ON) = 0.3 @

 

March 1996 NDS356P NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1.1 A, -20V. RDS(ON) = 0.3 @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Proprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _ D S G Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter NDS356P NDS356P Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage - Continuous ± 12 V ID Maximum Drain Current ±1.1 A - Continuous (Note 1a) - Pulsed PD (Note 1a) 0.5 (Note 1b) TJ,TSTG Maximum Power Dissipation ±10 0.46 Operating and Storage Temperature Range W -55 to 150 °C 250 °C/W 75 °C/W THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case (Note 1a) © 1997 Fairchild Semiconductor Corporation (Note 1) NDS356P NDS356P Rev. E1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max -20 Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current V VDS = -16 V, VGS = 0 V -5 µA -20 TJ =125°C µA IGSSF Gate - Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -12 V, VDS = 0 V -100 nA V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance -0.8 VGS = -4.5 V, ID = -1.1 A TJ =125°C -1.6 -2.5 -0.5 -1.3 -2.2 0.3 0.4 TJ =125°C 0.21 VGS = -10 V, ID = -1.3 A ID(ON) On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -1.1 A -3 1.8 A S VDS = -10 V, VGS = 0 V, f = 1.0 MHz 180 pF 255 pF 60 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) td(on) Turn - On Delay Time tr Turn - On Rise Time td(off) tf 7 15 ns 17 30 ns Turn - Off Delay Time 56 90 ns Turn - Off Fall Time 41 80 ns Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -10 V, RGEN = 50 VDS = -10 V, ID = -1.1 A, VGS = -5 V 3.5 5 nC 1.5 nC 2 nC NDS356P NDS356P Rev. E1 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units -0.6 A -4 A -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.1 A (Note 2) -0.85 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. PD(t ) = T J-TA R J At ) ( = T J-TA R J C RCA t ) + ( = I 2 (t ) × RDS (ON ) D TJ Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 250oC/W when mounted on a 0.02 in2 pad of 2oz cpper. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz cpper. 1a 1b Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDS356P NDS356P Rev. E1 Typical Electrical Characteristics -5 2 -6.0 -5.0 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) VGS = -10V -4.5 -4 -3 -4.0 -2 -3.5 -1 -3.0 V 1.75 = -3.5 V -4.0 1.5 -4.5 1.25 -5.0 1 -6.0 0.75 -10 0.5 0 0 -0.5 V DS -1 -1.5 -2 , DRAIN-SOURCE VOLTAGE (V) -2.5 -3 0 Figure 1. On-Region Characteristics RDS(on) , NORMALIZED 1 0.9 DRAIN-SOURCE ON-RESISTANCE VGS = -4.5 V 1.1 0.8 -50 -5 VGS = 4.5V 2.5 2 T J = 125°C 1.5 25°C 1 -55°C 0.5 -25 0 25 50 75 100 125 150 0 -1 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE (V) TJ = -55°C 25 -8 125 -6 -4 -2 0 -2 -4 -6 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -3 -4 -5 -6 Figure 4. On-Resistance Variation with Drain Current and Temperature -10 V DS = 1 0 V -2 I D , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature I D , DRAIN CURRENT (A) -4 3 T J , JUNCTION TEMPERATURE (°C) 0 -2 -3 I D , DRAIN CURRENT (A) 3.5 I D = -1.1 A 1.2 -1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.3 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE GS -8 1.15 VDS = V GS 1.1 I D = -250µA 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature NDS356P NDS356P Rev. E1 10 1.08 I D = -250µA -I S , REVERSE DRAIN CURRENT (A) BVDSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE (V) Typical Electrical Characteristics (continued) 1.06 1.04 1.02 1 0.98 0.96 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (°C) 125 V 2 T J = 125°C 1 25°C 0.2 -55°C 0.1 0.01 -1.2 -1.5 -1.8 -10 I Ciss 200 Coss 100 VGS = 0 V = -1.1 A V DS = -5 V -10 -6 -4 -2 V Crss D -8 GS f = 1 MHz , GATE-SOURCE VOLTAGE (V) 300 0 0.2 0.5 -V DS 1 2 5 10 20 0 1 2 , DRAIN TO SOURCE VOLTAGE (V) 4 5 6 7 Figure 10. Gate Charge Characteristics VDD ton t d(on) t off tr RL VIN 3 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics t d(off) tf 90% 90% V OUT D VGS -0.9 Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature 500 CAPACITANCE (pF) -0.6 VSD , BODY DIODE FORWARD VOLTAGE (V) 700 30 0.1 = 0V 0.5 0.001 -0.3 150 Figure 7. Breakdown Voltage Variation with Temperature 50 GS VOUT R GEN 10% 10% DUT G 90% S V IN 50% 50% 10% PULSE WIDTH Figure 11. Switching Test Circuit INVERTED Figure 12. Switching Waveforms NDS356P NDS356P Rev. E1 5 20 T J= -55°C - I D , DRAIN-SOURCE CURRENT (A) 25°C 3 10 10 4 125°C 2 1 VDS = -5V 5 RD S(O LI N) 1m T MI 10 1 10 1s 10 s DC 0.2 VGS = -10V SINGLE PULSE 0.1 0.05 TA 0m 0u s s ms s = 25°C 0.02 g FS , TRANSCONDUCTANCE (SIEMENS) Typical Electrical Characteristics (continued) 0 0 -2 -4 -6 I D , DRAIN CURRENT (A) -8 -10 0.01 0.1 0.2 0.5 1 2 5 10 20 30 - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature Figure 14. Maximum Safe Operating Area 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 0.005 R JA (t) = r(t) * RJA R = 250 °C/W JA 0.05 0.02 P(pk) 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - T A = P * R JA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve Note : Characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDS356P NDS356P Rev. E1