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NDP6060L ON Semiconductor 60V N-Channel Logic Level Enhancement Mode Field Effect Transistor, 800-TUBE visit Digikey

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NDP6060L Datasheet

Part Manufacturer Description PDF Type
NDP6060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDP6060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDP6060L Toshiba Power MOSFETs Cross Reference Guide Original
NDP6060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
NDP6060L_NL Fairchild Semiconductor 60V N-Channel Logic Level Enhancement Mode Field Effect Transistor Original

NDP6060L

Catalog Datasheet MFG & Type PDF Document Tags

sith

Abstract: NDP6060L Symbol Parameter ^D S S ^D G R Tc = 25°C unless otherw ise noted NDP6060L 60 60 ± 16 ±2 5 48 144 , W W/°C °C °C NDP6060L Rev. D / NDB6060L Rev. E Electrical Characteristics Symbol Parameter , .0 Q . Gate-Drain Charge NDP6060L Rev. D / NDB6060L Rev. E Electrical Characteristics , % . NDP6060L Rev. D / NDB6060L Rev. E NDP6060L Rev. D / NDB6060L Rev. E Typical Electrical , . Switching Test Circuit. Figure 12. Switching W aveform s. NDP6060L Rev. D / NDB6060L Rev. E
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OCR Scan
sith P6060L 6060L T0-220
Abstract: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor , Drain-Source Voltage NDP6060L 60 V VDGR Drain-Gate Voltage (RGS < 1 Mâ"¦) 60 V VGSS , Corporation A 100 W 0.67 W/° C -65 to 175 ° C 275 ° C NDP6060L Rev. D , NDP6060L Rev. D / NDB6060L Rev. E Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol , , Junction-to-Ambient 62.5 ° C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6060L Fairchild Semiconductor
Original

ndp6060l

Abstract: NDB6060L N April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect , NDP6060L NDB6060L Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS , /8" from case for 5 seconds NDP6060L Rev. D / NDB6060L Rev. E Electrical Characteristics (T , nC NDP6060L Rev. D / NDB6060L Rev. E Electrical Characteristics (T C = 25°C unless , < 2.0%. NDP6060L Rev. D / NDB6060L Rev. E Typical Electrical Characteristics 2 VGS = 10V
National Semiconductor
Original

zener diode 3.0 b2

Abstract: F63TNR April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor , Parameter VDSS Drain-Source Voltage NDP6060L 60 V VDGR Drain-Gate Voltage (RGS < 1 M , Semiconductor Corporation A 100 W 0.67 W/°C -65 to 175 °C 275 °C NDP6060L Rev. D , 300 nS 36 60 nC 8.2 nC 21 nC NDP6060L Rev. D / NDB6060L Rev. E , . Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6060L Rev. D / NDB6060L Rev. E Typical
Fairchild Semiconductor
Original
zener diode 3.0 b2 F63TNR CBVK741B019 EO70 FDP7060 L86Z

CBVK741B019

Abstract: EO70 April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor , Parameter VDSS Drain-Source Voltage NDP6060L 60 V VDGR Drain-Gate Voltage (RGS < 1 M , Semiconductor Corporation A 100 W 0.67 W/°C -65 to 175 °C 275 °C NDP6060L Rev. D , 300 nS 36 60 nC 8.2 nC 21 nC NDP6060L Rev. D / NDB6060L Rev. E , . Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6060L Rev. D / NDB6060L Rev. E Typical
Fairchild Semiconductor
Original
NDP4060L

mosfet cross reference

Abstract: SMP40N06 -220, N IRFZ34E NDP5060L TO-220, N IRLZ44 NDP6060L TO-220, N IRFZ34N NDP6060 TO-220, N IRLZ44N NDP6060L TO-220, N IRFZ44 NDP6060 TO-220, N IRLZ44S NDB6060L TO , TO-92, P NDP6060L NDP6060L TO-220, N NDH8301N NDH8301N SSOT-8, Dual N NDP608A , TO-220, N Si6956DQ^ NDH8501N TSSOP-8, Dual N SMP40N06-25L NDP6060L TO-220, N , SUB75N08-10 NDB708A TO-263, N Si9801DY FDS8928A SO-8, Comp N/P SUP40N06-25L NDP6060L
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Original
IRF7206 IRF7303 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A
Abstract: A p r il 1 9 9 6 N ational Semiconductor~ NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s isto rs are p ro d u ce d using N a tio n a l's p ro p rie ta ry , h ig h cell d e n sity, D M O S te c h n o lo g y . T h is v e ry h ig , lu te M a x im u m R a tin g s Tc = 25°C unless otherwise noted Symbol Parameter NDP6060L -
OCR Scan

NDP6060L

Abstract: NDB6060L Mt^M National T^J Semiconductorâ"¢ NDP6060L/ NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide , Absolute Maximum Ratings Tc = 25°C unless otherwise noted Symbol Parameter NDP6060L NDB6060L Units Voss
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OCR Scan
NDP6060L/ 004D27 0040E

N55C

Abstract: NDB6060 275 °c NDP6060LRev. D / NDB6060LRev. E This Material Copyrighted By Its Respective Manufacturer , NDP6060LRev. D / NDB6060LRev. E This Material Copyrighted By Its Respective Manufacturer Electrical , 62.5 , Temperature. NDP6060LRev. D / NDB6060LRev. E This Material Copyrighted By Its Respective Manufacturer , . Gate Charge Characteristics. Figure 12. Switching Waveforms. NDP6060LRev. D / NDB6060LRev. E This
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OCR Scan
N55C NDB6060 NDP6060LR NDB6060LR
Abstract: April 1996 N NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese logic level N -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to m inim ize on-state resistance, provide superior sw itching p erform an ce, and w ithstand high energy pulses in the avalanche -
OCR Scan

12SnOFC

Abstract: BQ37 ISL9N322AP3 MTP3055VL NDP4060L NDP6030PL NDP6060L NDP7060 RFP14N05L RFP3055 RFP40N10 RFP50N06 5U37
Fairchild Semiconductor
Original
FDP3672 12SnOFC BQ37 PMC-90 MKT-TO220B03 PMC-90 leadframe material 22-A102 JESD22-A104 JESD22A110-B JESD22A-101 JESD22-A105 JESD22-A108

SSP35n03

Abstract: bc417 NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

fqp60n06

Abstract: SSH6N80 NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410 NDS8410A NDS8410S NDS8936
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SSP80N06A IRF540 application rfp60n06 STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

SSH6N80

Abstract: rfp60n06 NDP410A NDP5060 NDP510A NDP603AL NDP6060 NDP6060L NDP610A NDP7060 NDP7061 NDP708A NDS8410
STMicroelectronics
Original
2SK2717 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A STMicroelectronics BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A

fqp60n06

Abstract: spb32N03l /NDP6030PL NDB/NDP603AL NDB/NDP6050 NDB/NDP6050L NDB/NDP6051 NDB/NDP6051L NDB/NDP6060 NDB/NDP6060L
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D irf630 irf640 YTAF630 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L
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