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Part : NDP6030PL Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 122 Best Price : $2.82 Price Each : $2.82
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NDP6030PL Datasheet

Part Manufacturer Description PDF Type
NDP6030PL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDP6030PL Toshiba Power MOSFETs Cross Reference Guide Original
NDP6030PL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan

NDP6030PL

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FAIRCHILD S E M IC O N D U C T O R tm June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level , S S ^G S S Id Parameter Drain-Source Voltage T c = 2 5 °C unless otherw ise noted NDP6030PL , NDP6030PL Rev.BI T j'T stg THERMAL CHARACTERISTICS R ' V jjc Thermal Resistance , /^js Note: Pulse Test: Pulse Width < 300 ps, Duty Cyde < 2.0%. NDP6030PL Rev.BI Typical , 6. Body Diode Forward Voltage Variation w ith Source Current and Temperature. NDP6030PL Rev.BI -
OCR Scan

NDB6030PL

Abstract: NDP6030PL June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor , Parameter NDP6030PL VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage - , Semiconductor Corporation NDP6030PL Rev.B1 Electrical Characteristics (TC = 25°C unless otherwise noted , 58 ns -1.5 A Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6030PL , Voltage Variation with Source Current and Temperature. NDP6030PL Rev.B1 Typical Electrical
Fairchild Semiconductor
Original
Abstract: June 1997 RAIRCHII-D MICDNDUCTOR tm NDP6030PL / NDB6030PL P-Channel Logic Level , NDP6030PL Total Power Dissipation @ Tc = 25°C Derate above 25 °C T j â'™1" s t g tl T j â'™1 , Resistance, Junction-to-Ambient ©1 997 Fairchild Semiconductor Corporation NDP6030PL Rev.BI , , Duty Cyde< 2.0%. NDP6030PL Rev.BI Typical Electrical Characteristics Figure 2. On-Resistance , . NDP6030PL Rev.BI -
OCR Scan

NDB6030PL

Abstract: NDP6030PL FAIRCHILD semiconductorâ"¢ June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement , Parameter NDP6030PL NDB6030PL Units ^DSS Drain-Source Voltage - 30 V ^GSS Gate-Source Voltage - Continuous , CD1 997 Fairchild Semiconductor Corporation NDP6030PL Rev.BI This Material Copyrighted By Its , %. NDP6030PL Rev.B1 This Material Copyrighted By Its Respective Manufacturer Typical Electrical , Temperature. NDP6030PL Rev.B1 This Material Copyrighted By Its Respective Manufacturer
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OCR Scan
10v70 T0-220
Abstract: June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor , Parameter NDP6030PL VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage - , Fairchild Semiconductor Corporation NDP6030PL Rev.B1 Electrical Characteristics (TC = 25°C unless , : Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6030PL Rev.B1 V GS = -10V -7.0 1.6 , Voltage Variation with Source Current and Temperature. NDP6030PL Rev.B1 Typical Electrical Fairchild Semiconductor
Original

SUP70N03-09BP

Abstract: MI1012T Fairchild NDP6030PL P-Channel MOSFET, capable of 20 amps and the SUP70N03-09BP N-Channel MOSFET, capable , C5 1.0µF Q3 NDP6030PL C6 1.0µF 10V Q8 SUP70N03-09BP R34 6.8 R18 10.0 C18 , R36 20.0 R24 10.0 Q13 NDP6030PL R39 100K - R26 10.0 R4 15.0K C19 0.1µF Q14
Microsemi
Original
LXE1810-100 LX1810 MI1012T sup70n03 BSS138 MI1012T-01 LXEVB1810-100 PMT4104 1PMT4104 LMC6482

Amp. mosfet 1000 watt

Abstract: BSS138 devices are the Fairchild NDP6030PL P-Channel MOSFET, capable of 20 amps and the SUP70N03-09BP N-Channel , C5 1.0µF Q3 NDP6030PL C6 1.0µF 10V Q8 SUP70N03-09BP R34 6.8 R18 10.0 C18 , Q13 NDP6030PL R39 100K R42 1.0M R26 10.0 R4 1K C19 0.1µF Q14 R25 1K Q15
Microsemi
Original
LXE1810 Amp. mosfet 1000 watt NDS0605

mosfet cross reference

Abstract: SMP40N06 NDC631N SSOT-6, N NDP6030PL NDP6030PL TO-220, P NDC632P NDC632P SSOT-6, P NDP603AL , -10 NDP508A TO-220, N Si9934DY FDS8934A SO-8, Dual P SUP75P03-08 NDP6030PL TO-220, P
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

12SnOFC

Abstract: BQ37 ISL9N322AP3 MTP3055VL NDP4060L NDP6030PL NDP6060L NDP7060 RFP14N05L RFP3055 RFP40N10 RFP50N06 5U37
Fairchild Semiconductor
Original
FDP3672 12SnOFC BQ37 PMC-90 MKT-TO220B03 PMC-90 leadframe material 22-A102 JESD22-A104 JESD22A110-B JESD22A-101 JESD22-A105 JESD22-A108

SSP35n03

Abstract: bc417 /NDP6030PL NDB/NDP603AL NDB/NDP6050 NDB/NDP6050L NDB/NDP6051 NDB/NDP6051L NDB/NDP6060 NDB/NDP6060L
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA