NDH8304P - Datasheet Archive

 

August 1996 ADVANCE INFORMATION NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features

 

N August 1996 ADVANCE INFORMATION NDH8304P NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. -2.5A, -20V. RDS(ON) = 0.08 @ VGS = -4.5V RDS(ON) = 0.11 @ VGS = -2.7V High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. _ 5 6 3 7 2 8 Absolute Maximum Ratings 4 1 TA = 25°C unless otherwise noted Symbol Parameter NDH8304P NDH8304P Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous -2.5 A (Note 1) - Pulsed PD Maximum Power Dissipation TJ,TSTG -7.5 Operating and Storage Temperature Range 0.8 W -55 to 150 (Note 1) °C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W NDH8304P NDH8304P Rev. A Electrical Characteristics (T Symbol A = 25°C unless otherwise noted) Parameter Conditions Min Typ Max -20 Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V -1 -10 TJ = 55°C µA µA IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS= 0 V -100 nA -1 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -2.5 A 0.08 VGS = -2.7 V, ID = -2.1 A 0.11 On-State Drain Current -0.4 VGS = -4.5 V, VDS = -5 V -7.5 VGS = -2.7 V, VDS = -5 V ID(on) A -3 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A -0.67 (Note 2) A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. P D (t) = T J -T A RJA (t) = T J -T A RJC +RCA (t) = I 2 (t) × R DS(ON)@T J D Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.005 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH8304P NDH8304P Rev. A