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Part : NDC652P Supplier : Fairchild Semiconductor Manufacturer : America II Electronics Stock : 4,025 Best Price : - Price Each : -
Part : NDC652P Supplier : Fairchild Semiconductor Manufacturer : Chip One Exchange Stock : 2,500 Best Price : - Price Each : -
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NDC652P Datasheet

Part Manufacturer Description PDF Type
NDC652P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC652P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effec Original
NDC652P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC652P Toshiba Power MOSFETs Cross Reference Guide Original
NDC652P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
NDC652P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
NDC652P_NF073 Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC652P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original

NDC652P

Catalog Datasheet MFG & Type PDF Document Tags

NDC652P

Abstract: N March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Parameter NDC652P Units Drain-Source Voltage -30 Gate-Source Voltage -Continuous ^0 Drain Current , , Junction-to-Ambient (Note la) 78 °C/W Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W NDC652P Rev. D1 , nC Gate-Drain Charge 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (Ta = 25 , letter size paper 2. Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.( NDC652P Rev. D1 Typical
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OCR Scan

NDC652P

Abstract: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Symbol Parameter NDC652P Units -30 V VDSS Drain-Source Voltage VGSS Gate-Source , , Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS , 20 nC 1.5 nC 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25 , < 2.0%. NDC652P Rev. D1 Typical Electrical Characteristics -10 -7.0 -6.0 -5.5 -5.0 -8
Fairchild Semiconductor
Original

NDC652P

Abstract: N March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Symbol Parameter NDC652P Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source , (Note 1) 30 °C/W NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , 20 nC 1.5 nC 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25 , %. NDC652P Rev. D1 -10 2.5 V GS = -10V -7.0 -6.0 -5.5 -5.0 -8 R DS(ON) , NORMALIZED
National Semiconductor
Original

r rca 631

Abstract: CBVK741B019 March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Symbol Parameter NDC652P Units -30 V VDSS Drain-Source Voltage VGSS Gate-Source , , Junction-to-Case © 1997 Fairchild Semiconductor Corporation NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS , 20 nC 1.5 nC 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS (TA = 25 , < 2.0%. NDC652P Rev. D1 Typical Electrical Characteristics -10 -7.0 -6.0 -5.5 -5.0 -8
Fairchild Semiconductor
Original
r rca 631 CBVK741B019 F63TNR FDC633N
Abstract: March 1996 N NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , th e rw ise n o te d Symbol Parameter NDC652P Units vDSS V Drain-Source Voltage , Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W NDC652P Rev. D1 E L E C T R IC A L C , 3.3 nC NDC652P Rev. D1 ELECTRICAL CHARACTERISTICS Symbol (t a = 25°C u n le s s o th e , : Pulse Width < 3 0 0 p s , Duty Cycle < 2.C NDC652P Rev. D1 Typical Electrical Characteristics -
OCR Scan

marking 652 fairchild

Abstract: qualification data Product NDC652P NDC652P_NF073 back to top © 2007 Fairchild Semiconductor Products | Design , 1: &E&Y (Binary Calendar Year Coding) Line 2: .652 NDC652P_NF073 Full Production N/A , March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , Dissipation T A = 25°C unless otherwise noted NDC652P -30 -20 -2.4 -10 (Note 1a) (Note 1b) (Note 1c , , Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDC652P
Fairchild Semiconductor
Original
marking 652 fairchild

B5G1

Abstract: Supersot 6 fi National Semiconductor" March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , Parameter NDC652P Units Drain-Source Voltage -30 Gate-Source Voltage - Continuous -20 Drain Current -
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OCR Scan
B5G1 Supersot 6 S0113D 5G1130 D3C17 LS01130

Siliconix

Abstract: Siliconix mosfet guide FDZ5047N FDN335N FDN361AN NDS352AP NDS332P FDN304P NDC651N NDC631N NDC652P NDC632P FDN359AN , NDC631N FDC633N FDC604P FDC638P FDC640P SI3447DV NDC651N NDC651N FDC654P NDC652P NDC652P
Fairchild Semiconductor
Original
2SK3240 BS170 IRLML6302 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2N7000 2N7002 2N7002E 2N7002K 2SJ574

mosfet cross reference

Abstract: SMP40N06 IRLMS1902 NDC631N Micro6, N IRFL014 NDT014 SOT-223, N IRLMS5703 NDC652P Micro6, P , NDP603AL TO-220, N NDC651N NDC651N SSOT-6, N NDP6050 NDP6050 TO-220, N NDC652P NDC652P SSOT-6, P NDP6050L NDP6050L TO-220, N NDC7001C NDC7001C SSOT-6, Comp N/P , Si6801DQ^ NDH8320C TSSOP-8, Comp N/P Si3455DV NDC652P TSOP-6, P Si6803DQ^ NDH8320C
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L IRF7203 FDS9435A IRF7204 NDS8434A IRF7205 BS270

ir 652p

Abstract: 652p F A IR C H IL D SEM ICONDUCTO R tm March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices , Ratings Symbol Parameter ^D S S ^G S S T a = 25°C unless otherw ise noted NDC652P -30 -20 -2.4 -10
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OCR Scan
ir 652p 652p

NDT453N

Abstract: H834P 3 3 aos 0.1 0.16 0.2 P-Channel NDC632P FDC6304P* FDC6302P* NDC652P NDC7003P &2Saw 0.03
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OCR Scan
NDT453N FDC6321C 6322L NDH8501N H834P T-223 FDC6303N FDC6301N NDC7002N NDT455N

Supersot6

Abstract: Supersot 6 0.125 - - 6.2 3.6 1.6 NDC652P -30 Single 0.11 0.18 - - 5.5 2.4
Fairchild Semiconductor
Original
FDC6401N FDC6305N FDC637AN FDC6561AN FDC645N FDC655AN Supersot6 complementary FdC5612 Complementary MOSFETs FDC6420C equivalent

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode -phase BLDC Motor Drive for FDD Applications NDC652P P-Channel Logic-Level Enhancement Mode Field Effect
Fairchild Semiconductor
Original
500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v S-17148 247TM

SSP35n03

Abstract: bc417 (Continued) Product ISL9N327AD3ST MMBF170 NDB603AL NDC631N NDC651N NDC652P NDC7002N NDC7003P NDH8304P
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

FDC6331

Abstract: fdp047an STP16NF06 MTP3055V NDC652P STT3PF30L STP55NF06 NDP6060 STP45NF06 STS6NF20V NDS8425 STS6PF30L
Fairchild Semiconductor
Original
SFP9614 FDC6331 fdp047an FDB045AN fdd5614p FQA70N15 FQPF10N20 2N7002MTF BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532

IRF1830G

Abstract: IRF1830 1.6 NDC652P -30 Single 0.11 0.18 ­ ­ 10.5 2.4 1.6 FDC6304P -25
STMicroelectronics
Original
IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AO4405 AO4407 AO4408 AO4409 AO4410 AO4411

FQPF*10n20c

Abstract: FQPf10N60C NDC651N NDC652P NDC7001C NDC7002N NDC7003P NDF0610 NDH8301N NDH8302P NDH8303N NDH8304P NDH831N
Fairchild Semiconductor
Original
FDZ203N FQPF*10n20c FQPf10N60C FQP17P06 FQPF10N20C FQA90N08 fqpf6n80 FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp FDC658P -30 Single 0.05 0.075 FDC654P -30 Single 0.075 0.125 NDC652P -30 Single 0.11 0.18
Fairchild Semiconductor
Original
ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 S-112 F-91742

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 SuperSOT-6 P-Channel FDC5614P -60 Single FDC658P -30 Single FDC654P -30 Single NDC652P -30
Fairchild Semiconductor
Original
FLMP SuperSOT-6 Complementary MOSFETs buz11 FDG6316 FQD7P20 IRF650 IRFS540 SC70-6 SC75-6
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