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Part : NDC632P Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,470 Best Price : $0.22 Price Each : $0.22
Part : NDC632P Supplier : Fairchild Semiconductor Manufacturer : ComSIT Stock : 2,475 Best Price : - Price Each : -
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NDC632P Datasheet

Part Manufacturer Description PDF Type
NDC632P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC632P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effec Original
NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original
NDC632P Toshiba Power MOSFETs Cross Reference Guide Original
NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
NDC632P National Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
NDC632P_NF073 Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Transistor Original
NDC632P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Transistor Original

NDC632P

Catalog Datasheet MFG & Type PDF Document Tags

NDC632P

Abstract: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , otherwise noted Symbol Parameter NDC632P Units VDSS Drain-Source Voltage -20 V VGSS , , Junction-to-Case (Note 1) 30 °C/W © 1997 Fairchild Semiconductor Corporation NDC632P Rev. B1 , nC 1.8 nC NDC632P Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , %. NDC632P Rev. B1 Typical Electrical Characteristics -15 2 -3.5 -12 -9 RDS(ON
Fairchild Semiconductor
Original

NDC632P

Abstract: N Junel996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , . SuperSOTâ"¢-6 AbSOlUte Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter NDC632P , , Junction-to-Ambient (Note la) 78 °C/W Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W NDC632P Rev. B1 , Gate-Source Charge t= -5-7 A, VGS = 4.5 V 1.7 nC Gate-Drain Charge 1.8 nC NDC632P Rev. B1 , copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.( NDC632P
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OCR Scan

CBVK741B019

Abstract: F63TNR June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , otherwise noted Symbol Parameter NDC632P Units VDSS Drain-Source Voltage -20 V VGSS , , Junction-to-Case (Note 1) 30 °C/W © 1997 Fairchild Semiconductor Corporation NDC632P Rev. B1 , nC 1.8 nC NDC632P Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , %. NDC632P Rev. B1 Typical Electrical Characteristics -15 2 -3.5 -12 -9 RDS(ON
Fairchild Semiconductor
Original
CBVK741B019 F63TNR FDC633N RCA 014

NDC632P

Abstract: N June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General , otherwise noted Symbol Parameter NDC632P Units VDSS Drain-Source Voltage -20 V VGSS , Thermal Resistance, Junction-to-Case NDC632P Rev. B1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , VDS = -5 V, ID = -2.7 A, VGS = -4.5 V 1.7 nC 1.8 nC NDC632P Rev. B1 ELECTRICAL , Cycle < 2.0%. NDC632P Rev. B1 Typical Electrical Characteristics 2 VGS =-5V -4.5 -4.0 -3.5
National Semiconductor
Original

NDC632P

Abstract: diode 6t6 e» National Semiconductor' June 1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , otherwise noted Symbol Parameter NDC632P Units Drain-Source Voltage -20 Gate-Source Voltage -
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OCR Scan
diode 6t6 SG113D 003R7 SDH30
Abstract: Junel996 N NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese P-C hannel logic level e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ationals proprietary, high cell density, DMOS technology. This very high density pro cess is especially tailored to m inim ize on-state resistan ce. T hese devices are , noted Symbol Parameter NDC632P Drain-Source Voltage Units ^0 Gate-Source Voltage -
OCR Scan

NDT453N

Abstract: H834P 3 3 aos 0.1 0.16 0.2 P-Channel NDC632P FDC6304P* FDC6302P* NDC652P NDC7003P &2Saw 0.03
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OCR Scan
NDT453N FDC6321C 6322L NDH8501N H834P T-223 NDC631N FDC6303N FDC6301N NDC651N NDC7002N

08390

Abstract: CDRH6D28-100 2.7V to 5.5V Input 2 (POK, LBO UNUSED) 6 16 to OUT 1 4 8 C7 0.22 3 L1 10uH Sumida CDRH6D28-100 (10uH 1.7A) LBN LXP POK LBO POUT MAX1701 LBP OUT FB 14 R1 10 C3 0.22 AIN C4 100uF 6.3V C5 100pF R3 215k R4 100k 9 10 R5 205k ONB\ PGND GND 12 C2 220 uF R2 6.3V 20k 11 C6 560pF AO Q1 NDC632P 3.8V 0.8A 15 REF 7 D1 Nihon EC21 QS03L 13 CLK/SEL ONA C1 220uF 6.3V AVX TPS R6 100k 5
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Original
08390 08149

transistor 632p

Abstract: 632p F A I R C H I L D tm Junel 996 M ICDNDUCTQ R NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance , Symbol Parameter ^DSS ^GSS T a = 25°C unless otherw ise noted NDC632P -20 -8 -2.7 -10 (Note 1a
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OCR Scan
transistor 632p 632p

mosfet cross reference

Abstract: SMP40N06 IRFL4105 FDT5060L SOT-223, N IRLMS6702 NDC632P Micro6, P IRFL9014 NDT2955 SOT , NDC631N SSOT-6, N NDP6030PL NDP6030PL TO-220, P NDC632P NDC632P SSOT-6, P NDP603AL
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Original
IRF7206 IRF7303 SUP40N06-25L mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY IRFZ44 TO-263 SMP60N03-10L 2N7000 IRF7203 FDS9435A 2N7002 IRF7204 NDS8434A

Siliconix

Abstract: Siliconix mosfet guide FDZ5047N FDN335N FDN361AN NDS352AP NDS332P FDN304P NDC651N NDC631N NDC652P NDC632P FDN359AN
Fairchild Semiconductor
Original
2SK3240 BS170 IRLML6302 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2N7002E 2N7002K 2SJ574 BSH108

SSP35n03

Abstract: bc417 /NDP7052L NDB/NDP7060 NDB/NDP7060L NDB/NDP7061 NDB/NDP7061L NDB/NDP708A NDB/NDP710A NDC631N NDC632P
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA