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NCC KM

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HX-JE

Abstract: MN152 E{D>|G M{KM| OU O\dg\iXkli\ KD? } Dk\d ~ ?`^`k J r Hdfkj hXd^\ ]eh j_\ i\dieh 1 , \ k_Xk n`cc i\jlck `e [XdX^\ kf k_\ gif[lZk+ ;3 Ce dej `d]bem [kij eh m`h\ [h\^i `dje `di`[\ e] j_`i , \jj`e^ mXcl\{KQ|7M\[~ N\kk`e^ mXcl\{NQ|7Bi\\eW O_\idfZflgc\7F{>|~ M{KM|~ @{>M|~ O{>>|~ N{KK , _\ N,R f] k_`j le`k Yp j\ejfij+ |~ M{KM|~ @{>M|~ O{>>|~ N{KM|~ I{II|~ R{OO|: De ZXj\ f] MO? `eglk9?KkG~ ?KkC~ EKkG~ EKkC : N,R. N,R/ / / >|De ZXj\ f
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Abstract: margin­ ing of data. Even the write-intensive systems can take advan­ tage of the KM 29N32000 extended , . The KM 29N32000 is an optimum solution for large nonvolatile storage applications such as solid state , nonvolatility. PIN CONFIGURATION 3 C M VSSI= 1 _ CLEi= ALEi= 3 W Ec 4 W Pc 5 N.CC 6 N.Cc 7 N.Cc 8 N.CC 9 N.CC 10 11 12 N.CC 13 N.Cc 14 N.Cc 15 N.Cc 16 N.Cc 17 l/OOc 18 1/01 c 19 I , AC TEST CONDITION (KM29N32000T:T a =0 to 70°C, KM 29N32000IT:T a =-40 to 85°C, Vcc=5V ±10% Param -
OCR Scan
KM29N32000IT 528-B 29V32000 KM29N32000 KM29W32000

681000BLP

Abstract: 681000BLP-7L Dissipation "H 1 »liniii r In,till r» roouci r anwy KM 681000BL KM 681000BL-L KM 681000BLE KM 681000BLE-L KM 681000B L 1 KM 681000BU-L Industria l(-40-85"C) 70 Extended{-25~85-C) 4.5 to 5.5V 70 Operating , I*» 32-TSOP Typel - Forward 3VSS 32 3VCC N.CC ' 0 3 1 3A1S AieC 2 3 30 3CS2 A1«C 28 3fcP A12 C 4 , i A15C ; NCC I 32-TSO P Typel-Reverse 22 3 * 5 2 p rjwn 2 * VSS 2 3WX W E! 1= ® 2 , KM 6S10008LG I-7L K M 681000B C n-7L KM S810a08(.R)-7L F w w t ìo n 32-SO P, 70ra,IX-pw r 32-T SO P F
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681000BLP 681000BLP-7L KM681000BI B8100 681000BLG KM681000B 32-DIP-600 32-SOP-525 32-TSQP1-0820F/R 32-DIP 32-SOP
Abstract: ) - Forward Type The KM 29V16000A is a 2M(2,097,152)x8bit NAND Flash M em ­ ory with a spare 64K , write-intensive systems can take advan­ tage of the KM 29V16000A extended reliability of 1,000,000 program , combined with the other 256 bytes can be utilized by system-level ECC. The KM 29V16000A is an optimum , CONFIGURATION VSSI= CLEi= ALEi= W Ec W Pc N .C c N ,C c N .C c N .C c N.CC 1 2â'ž o 3 4 5 6 7 8 9 10 11 12 N.CC 13 N.CC 14 N.CC 15 N.CC 16 N.CC 17 I/OOC 18 1/01 c 19 I/02C 20 I -
OCR Scan
KM29V16000ATS 264-B 29N16000A

u6 ek

Abstract: b555c , @>?Ke K?< 00/ N@CC 9< x8D8> , MVNO AVZOY6 bjc 4@K? ,M< -IFK , ;: KF qii3;:e xfmqiu KPG< @J qni3;: KF jkii3;:g 1?@J =LE:K@FE @J EFK JL@K89C< =FI :8G8:@K@M< CF8;g bkc
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u6 ek b555c MMI3 7D78F
Abstract: D8Og {LE:K@FE8C 1?F:B I , 0 , :LJKFD , @89@C@KPe N< N@CC B Hongfa Relay
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8BAF78F 18DGC

kmkp

Abstract: BO-63 a8WUZTKPTN 0?< ;IFLE;@E> JK8KLJ F= :8G8:@K@M< GIFO@D@KP J , ?< ,+ GF@EKm 8E; K?< ,zz GF@EK @E n @J DFI< K?8K mjqKLIEJh K?< J FG , ,
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kmkp BO-63 b628 9l 15a k44b BV9C 89JFIGK

NFO-125-1

Abstract: CAN24TST120 /91 /92 SCC NCC 200ºC 260ºC Diameter (inches Weight (lbs/1000ft) Diameter (MM) Weight (kg/km) 26 24 , SCC NCC 200ºC 260ºC Diameter (inches Weight (lbs/1000ft) Diameter (MM) Weight (kg/km) Min 2 1 0 00 , SCC NCC 200ºC 260ºC Diameter (inches Weight (lbs/1000ft) Diameter (MM) Weight (kg/km) Min 26 24 22 , N = NCC Shield ­ 22 26 to 10 S T = Tin Coated Copper S = Silver Coated Copper SA = Silver , ° N = NCC Shield* 26 to 2 26 to 4/0 150° 200° 260° T = TCC Shield S = SCC Shield N = NCC
Tensolite
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NFO-125-1 CAN24TST120 EN2267 BMS 13-60 wire M27500- twisted pair NF24-2Q100 WC27500 MIL-DTL-17

km418c256

Abstract: KM418C256J fabricated using Samsung's advanc ed CMOS process KM 418C 256- 7 KM 418C 256- 8 K M 4 18 C 2 5 6 -10 , , to DQ« D Q .C 4 DÛ4 £ 5 V ccC 6 D ûs C 7 dqb c 8 DO 7 C 9 D ûs C 10 DQ , C 1 NCC DQ., to 12 4 0 I
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OCR Scan
KM418C256J km418c256 KM418C256

lhh-3

Abstract: kj3x @E =LCC CF8; :LII , K?< J:I?Kd K?< 00/ N@CC 9< x8D8>
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lhh-3 kj3x 8G89

LA 7376

Abstract: tSM& f^IS n KM ¿fc*/ A 3/ , »4â'" < » u m . pen«« CLASS W- WIMC 7 MAMCC â'" I TOUM NCC U C IF T f AS MOT KO | * . ois
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OCR Scan
LA 7376

41C16100

Abstract: Performance range: tRAC KM 41C 161 0 0-6 K M 41C 16100-7 K M 41C 16100-8 · · · · · · · · · · 60ns 70ns 80ns tcAC 15ns 20ns 20ns tRC 1 10ns 130ns 150ns The KM 41C 16 1 0 0 features Fast Page Mode operation which , CONFIGURATION KM41C16100J V ccC 1 0 DC 2 N.CC 3 w c 4 RÄSC 5 An C 6 24 Vss 23 Q 22 "2 N.C 21 CÄ3 20 N.C 19 , 10 11 12 A,o Ao A, A, f -VssC 24 Q C 23 N.C C 22 C Ä 5C 21 N.CC 20 Ag C 19 VssC 13 , , Address Cycling @ KM 41C 16 1 0 0-6 KM 41C16100-7 KM 41C 16 1 0 0-8 KM 41C 16100-6 KM 41C 16100-7 K M 41C
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OCR Scan
41C16100 KM41C16100 KM41C16100T 24-LEAD

mmc 4011 E

Abstract: 2SK1593 =0 100 V Y- h â'¢ v-xmmi± Vgss VDs =0 + 20 V KM ® Id(do + 500 mA lü(pulse) PW^IO ms Duty Cycle , 6.0 Q KM > â'¢ v-xf§:t>ffiin; RdS(oii)2 Vgs = 10 V, Id=0.3 A 3.4 5.0 Q, A ts W m p. VDS = 10 V Vgs , SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ÌB S A â'¢k V A 30 100 300 KM >Wjà Id (mA) 1000 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 2 5 10 20 50 100 KM > â'¢ y-xratÅ' Vos (V) 2SK1593 ÃB s A â k , tdlonl - - - 30 100 300 KM>®iïit Id
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OCR Scan
mmc 4011 E TC-7727B
Abstract: C NCc Vss t O E /O E C QoC Os C Qi C PIN CONFIGURATION < < < < < z< < < < < m® £0 - , DIMENSIONS 40 LEAD PLASTIC DUAL IN LINE PACKAGE (KM 23C4100H) CMOS MASK ROM U nits: Inches (m illim e ters) 44 LEAD QUAD FLAT PACKAGE (KM 23C 4100H FP) 279 ELECTRONICS -
OCR Scan
KM23C4100H 8/256K KM23C41 KM23C410Q

3050

Abstract: Power supply current ICC - TBD Power supply noise Ncc - - 100 Ambient , Modules Wavelength (nm) Distance (Km) Output Power (dBm) SFP-VDTT-CC-MM/SM 1310 MM , Specifications SFP Modules Distance (Km) 1530 SM 30-50 0 to +3 -18 SFP Modules
EMCORE
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3050

m514260

Abstract: HM514260-7 I/07 C 10 31 â¡ I/08 I/07 20 NCC 11 30 â¡ NC NC 22 NC C 12 29 â¡ LCAS RAS 24 WEC 13 28 â¡ UCAS AO 26 RASH 14 27 â¡ OE A2 28 NCC 15 26 â¡ A8 Vcc 30 AO C 16 25 â¡ A7 A4 32 A1 C 17 24 â , 31 â¡ LCAS WEC 15 30 â¡ ÃCÃ"S RAS C 16 29 â¡ OE NCC 17 28 â¡ A8 AO C 18 27 â¡ A7 A1 C 19 , HITACHI/ LOGIC/ARRAYS/MEM - RAS OCXS ccss .1 X Address S ^_Wd tRSH km_ "â CUP Row m , CAS ^ "V v .A "S H ⺠"ASC Km «-⺠XRSH â'"H Col. twCH lWCS tm .r CRP ¿ZZZk
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OCR Scan
DDE3136 HM514260 HM514260JP-7 HM514260JP-8 HM514260JP-10 HM514260ZP-7 m514260 HM514260-7 HM514260JP8 HM514260-8 HM514260ZP-10 HM514260L W/825 W/715
Abstract: DQa v d d q O o DQa NC O o NC DQa o O 0 NC 0 NC 0 NC O DQa O Vddq C NCC NCC NCC NCC vs s C NCC DObiz DQbC VssC VDDQC DQbC DQbC NCC V ddC s vdd o NC O DQb O Vd dq o DQb o NC O , 0 NC v d d q / 1 o ncC vs s C DObCZ DQbC vddqCI V ssC DQbC DQbC DQbC NCC V ssC , - TQFP (See Note 1) Rating Junction to Ambient (@ 200 Km) Junction to Board (Bottom) Junction to -
OCR Scan
MCM69P819 69P819 MCM69P819ZP4 MCM69P819ZP4R MCM69P819TQ4 MCM69P819TQ4R
Abstract: 28 29 NC( 30 NCd 31 NCC 32 NC[ NC[ NC[ VSYNC[ 0SCIN[ SCOUT[ Slk [ VB[ VG[ VG[ VSS[ 0 79 78 77 76 , KM M EUKnM M CS 326 -
OCR Scan
ST63RS1 ST63XX 128/FOSC ST63RT1

KM 3502 P

Abstract: 3502 NCC 0.12 -0.03 D 8.7 19.5 0.65 0.12 -0.03 d +NCC +10M 35V +M 081 , 5002 336 KM -55 0.04 0.06 0.06 0.06 0.06 0.08 0.08 0.04 0.04 0.04 0.04 0.06 0.06
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KM 3502 P 3502 NCC 35V35VDC M1/1000 10VDC/13VDC 16VDC/20VDC 20VDC/25VDC
Abstract: clock cycles required to find it, NCC, is used to calculate the position of the error. The calculation , as follows: ED = NCC -1 (where ED is the Error Displacement in bits, NCC is the Number of Clock , data field, instead of the ECC field. The calculation would then be: ED = NCC - 33. Note that the Error , is increased. Figure 6. Clock and Hold Timing Monollthlo KM Memories 7-47 SiBER 673480 Absolute , Monollthlo KM Momorlas 7-51 SiBER 673480 \ .r -'gss (2) (1) DATA VALID ^ DATA VALID ^ DATA VALID -
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