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Part Manufacturer Description Datasheet BUY
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

N-channel MOSFET 800v 50a to-247

Catalog Datasheet MFG & Type PDF Document Tags

IRU1239SC

Abstract: iru1239 package 3 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 10 45V 110.000A D-61 45V 110A Schottky Common Cathode , Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a , 1600V 3 Phase Bridge in a INT-A-Pak package 3 800V 3 Phase Bridge in a INT-A-Pak package FAX , : 0755-8380 8450 3 800V 3 Phase Bridge in a INT-A-Pak package 100V 110A Schottky Common Cathode Diode in a
Shenzhen Shouhe Technology
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TRIACS EQUIVALENT LIST

Abstract: 440v to 12v smps power supply N-Channel PowerTrench MOSFET 300V, PT, N-Channel IGBT, TO-247 Package PNP Epitaxial Silicon Transistor , 18 FDS3672/FDS3682/FDS3692/ FDS3992/FDS2572/FDS2582 60V trench MOSFET devices provide , load currents in excess of 50A from a 12V source with minimal external circuitry. This product is , functions · Injection systems · Overcurrent protection using MOSFET sensing · Distributed power , topologies 8 9 10 FKPF12N60/FKPF12N80 TinyLogic Ultra Low Power FOD2741A/B/C 600V/800V
Fairchild Semiconductor
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TRIACS EQUIVALENT LIST 440v to 12v smps power supply 440v ac voltage regulator REG IC 48V IN 12V 10A OUT 440v to 12v smps power supply 50A dimmer diagrams IGBT FS8S0765RC ACE1502 FAN1655 FAN2534 FAN5098 FKPF12N60/80

MOSFET 800V 10A

Abstract: mosfet 10a 800v QFET ® FQA10N80C 800V N-Channel MOSFET Features Description · · · · · · These , - °C/W - 40 °C/W www.fairchildsemi.com FQA10N80C 800V N-Channel MOSFET , FQA10N80C Rev. A1 2 www.fairchildsemi.com FQA10N80C 800V N-Channel MOSFET Package Marking and Ordering Information FQA10N80C 800V N-Channel MOSFET Typical Performance Characteristics Figure 1 , www.fairchildsemi.com FQA10N80C 800V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching
Fairchild Semiconductor
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MOSFET 800V 10A mosfet 10a 800v mosfet 10a 800v high power F109

1000V 25A Mosfet

Abstract: MTM5N100 Characteristics Forward On Voltage Reverse Recovery Time IS =5.0A Forward Turn-On Time Symbol VSD Min trr Typ Max 1.5 1200 ns ton Total Gate Charge VDS= 800V, ID= 5.0A, VGS =10V , : MTM5N100 TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ , Gate Voltage IDSS VDS = 1000V Drain Current VDS = 800V, T J = 125°C On State Drain Current ID(on , , ID = 2.5A, VDS(on) ID =5.0A ID =2.5A, TJ = 100°C Drain Source OnVoltage Input Capacitance
Semiconductor Technology
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1000V 25A Mosfet

JEDEC24

Abstract: CPM2-1200-0025B VDS 1200 V CPM2-1200-0025B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features , VDS = 800 V, VGS = -2/20 V ID = 50A, RG = 3.8, L= 856 H Per JEDEC24 pg 27 Fig. 6 Fig. 7 25 43 22 21 , 1.5 VDS = 800 V, VGS = -5/20 V ID = 50A, RG = 2.5, L= 856 H Per JEDEC24 pg 27 f = 1 MHz, VAC = 25 , pg 27 Note Fig. 16 Note (2): Tested in a TO-247 Package 2 CPM2-1200-0025B Rev. - , VDS = 600V (Note (2) 10000 Ciss Figure 14. Inductive Switching Loss vs Drain Current VDS = 800V
Cree
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CPM2 solar charge circuit max 856

SSS6N80A

Abstract: mosfet yb Advanced Power MOSFET" SSS6N80A FEATURES â  Avalanche Rugged Technology â  Rugged Gate , Area â  Lower Leakage Current : 25 |a.A (Max.) @ VDS = 800V â  Low Rds(on) : 1 -472 £1 (Typ , Copyrighted By Its Respective Manufacturer SSS6N80A N-CHANNEL POWER MOSFET Electrical Characteristics (Tc , =-30V 'dss Drain-to-Source Leakage Current - - 25 (xA Vds=800V - - 250 Vds=640V,Tc=1 25°C ^DS(on , Continuous Source Current - - 3.5 A Integral reverse pn-diode in the MOSFET 'sM Pulsed-Source Current 0 - -
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OCR Scan
mosfet yb

mosfet yb

Abstract: SSF6N80A Advanced Power MOSFET" SSF6N80A FEATURES â  Avalanche Rugged Technology â  Rugged Gate , Area â  Lower Leakage Current : 25 |a.A (Max.) @ VDS = 800V â  Low Rds(on) : 1 -472 £1 (Typ , Its Respective Manufacturer SSF6N80A N-CHANNEL POWER MOSFET Electrical Characteristics (Tc , =-30V 'dss Drain-to-Source Leakage Current - - 25 (xA Vds=800V - - 250 Vds=640V,Tc=1 25°C ^DS(on , Continuous Source Current - - 4.5 A Integral reverse pn-diode in the MOSFET 'sM Pulsed-Source Current © - -
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OCR Scan

SSP7N80A

Abstract: mosfet yb Advanced Power MOSFET" SSP7N80A FEATURES â  Avalanche Rugged Technology â  Rugged Gate , Area â  Lower Leakage Current : 25 |a.A (Max.) @ VDS = 800V â  Low Rds(on) : 1 -472 £1 (Typ , POWER MOSFET Electrical Characteristics (Tc=25°c unless otherwise specified) Symbol Characteristic , =30V Gate-Source Leakage , Reverse â'" â'" -100 Vgs=-30V 'dss Drain-to-Source Leakage Current - - 25 (xA Vds=800V , pn-diode in the MOSFET 'sM Pulsed-Source Current 0 - - 28 vSD Diode Forward Voltage © - - 1.4 V Tj
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OCR Scan

BUZ305

Abstract: OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source , 100 nA IDSS VDS = 800V, VGS = 0V, VDS = 800V, VGS = 0V, TJ = 125°C 1.0 100 µA µA , Voltage Input Capacitance rDS(on) VGS = 10V, ID = 5.0A 1.0 Ohms gFS VDS = 2V = ID = RDS(ON)MAX, ID = 5.0A Output Capacitance Coss Reverse Transfer Capacitance Crss ID(on
Semiconductor Technology
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BUZ305

5n80

Abstract: UNISONIC TECHNOLOGIES CO., LTD 5N80 Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to , Tube Tube 1 of 7 QW-R502-483.E 5N80  Power MOSFET MARKING INFORMATION PACKAGE , QW-R502-483.E 5N80  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise , -483.E 5N80  Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified
Unisonic Technologies
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5n80 5N80L-TA3-T 5N80G-TA3-T 5N80L-TF1-T 5N80G-TF1-T 5N80L-TF3-T 5N80G-TF3-T
Abstract: BV dss RDS(on) Id SSP5N80 800V 2.5(1 5.0A SSP5N70 700V 2.5(1 5.0A , =25V, f=1,0MHz Vdd=0.5 BVdss, lo=5.0A, Zo=9.m Rise Time - - 150 ns (MOSFET switching , =10V, Id=5.0A, Vds=0.8 Max. Rating Gate-Source Charge - 10.3 - nC operating temperature , Characteristic - 20 A Modified MOSFET symbol showing the integral reverse P-N junction rectifier , Diode Forward Voltage (2) - - 1.5 V Tj=25°C, Is=5.0A, Vgs=0V Reverse Recovery Time -
OCR Scan
SSP5N80/70

2SK3529-01

Abstract: 2SK3529-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown , =8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 Tch , = 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=800V VGS=0V Tch=125°C VDS=640V VGS=0V VGS=±30V VDS
Fuji Electric
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Abstract: Advanced SSS6N80A Power MOSFET FEATURES - 800 V ^DS(on) = 2.0 Q. BVD S S , |^A (Max.) @ V D = 800V S â  A Extended Safe Operating Area â  cn Rugged Gate , =0V,I d=250 h A Id=250hA See Fig 7 V ds=5V, Id=250(j,A V gs=30V V gs=-30V V ds=800V HA V , Recovery Charge Q rr A in the MOSFET Tj=25 °C,Is=3.5A,V gs=0V - ns Tj=25 °C,IF= 7 A , Tem perature 0 lSD< 7 A , d i/d t^ 50A /|is, V dd< BV dss , Starting T j= 2 5 °C @ Pulse Test -
OCR Scan

SSS5N80

Abstract: 250M Delay Time - - 60 ns Vdd=0.5 BVdss, Id=5.0A, Zo=9.1il (MOSFET switching times are essentially , Number BVoss RDS(on) Id SSS5N80 800V 2.5« 2.7A SSS5N70 700V 2.50 2.7A TO-220F I.Gate 2.Drain 3 , Fall Time - - 130 ns Qg Total Gate Charge (Gate-Source Plus Gate-Drain) - 65 nC Vgs=10V, Id=5.0A , MOSFET symbol showing the integral reverse P-N junction rectifier Ism Pulse Source Current (Body Diode) (3) - - 20 A vsd Diode Forward Voltage (2) - - 1.5 V Tj=25°C, ls=5.0A, Vgs=0V tr Reverse
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OCR Scan
250M SSS5N80/70

ssh6n80a

Abstract: SSH6N80AS Advanced Power MOSFET SSH6N80AS FEATURES â  Avalanche Rugged Technology â  Rugged Gate , R ecs Case-to-Sink 0.24 - °c/W R eJA Junction-to-Ambient - 40 ELECTRONICS (Max.) @ VDS = 800V , Vgs=-30V 'dss Drain-to-Source Leakage Current - - 25 HA Vds=800V - - 250 Vds=640V,Tc=1 25°C ^DS , Is Continuous Source Current - - 6 A Integral reverse pn-diode in the MOSFET 'sM Pulsed-Source , =27£2, Starting TJ=25 °C a 0ISD< 7A, di/dt^ 50A/|is, VDD
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OCR Scan
ssh6n80a SSH6N80 250HA
Abstract: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC , S S S Packing Tube Tube Tube 1 of 6 QW-R502-483.c 5N80 Preliminary Power MOSFET , Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER , CONDITIONS ID=250µA, VGS=0V VDS=800V, VGS=-0V VGS=+30V VGS=-30V VDS=VGS, ID=250µA VGS=10V, ID Unisonic Technologies
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Abstract: : MTP3N100 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain â'" Source , Gate Voltage IDSS VDS = 1000V Drain Current VDS = 800V, T J = 125°C On State Drain Current ID(on , Units Vdc Total Gate Charge VDS = 800V, ID = 3.0A, VDS = 10V trr 1000 ns ton Forward , VDD = 25V, ID = 1.5A Rgen = 50â"¦ Max td(on) Delay Time (Turn On) Min Typ 75 ns Semiconductor Technology
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Abstract: Advanced SSF6N80A Power MOSFET FEATURES B V DSS - â  Lower Input Capacitance â  2 . 0 Q. Improved Gate Charge â  Lower Leakage Current : 25 |^A (Max.) @ V D = 800V , Fig 7 V ds=5V, Id=250(j,A V gs=30V V gs=-30V V ds=800V HA V ds=640V,Tc=1 25°C - - , Is Reverse Recovery Time trr Reverse Recovery Charge Q rr A in the MOSFET Tj , =50V, R g=27£2, Starting T J=25 °C © lSD< 7 A , d i/d t^ 50A /|is, V dd < B V dss, Starting T j -
OCR Scan

mosfet 10a 800v

Abstract: MOSFET 800V 10A TO-3P UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET , Tube 1 of 6 QW-R502-218.E 10N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°, unless , Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°, unless otherwise specified) PARAMETER OFF , CONDITIONS VGS =0 V, ID =250 µA VDS =800V, VGS =0 V VDS =640V, TC =125°C VDS =0 V, VGS = ±30 V , On-Resistance RDS(ON) VGS = 10V, ID = 5.0A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS =0V, f
Unisonic Technologies
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MOSFET 800V 10A TO-3P 10N80L 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1-T
Abstract: 2SK3787-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series , mJ 40 5 2.16 43 +150 -55 to +150 2 kV/s VDS < 800V = kV/µs *3 Ta=25°C W Tc , temperature. See to the `Transient Thermal impedance' graph. *3 IF < -ID, -di/dt=50A/µs, VCC < BVDSS, Tch , time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=800V VGS , POWER MOSFET Characteristics 50 Allowable Power Dissipation PD=f(Tc) 8 45 Typical Fuji Electric
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