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Part Manufacturer Description Datasheet BUY
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver visit Linear Technology - Now Part of Analog Devices

N mosfet 250v 600A

Catalog Datasheet MFG & Type PDF Document Tags

N mosfet 250v 600A

Abstract: mosfet 200A QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module , ., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Electrical Characteristics Characteristics (Each Mosfet or Each Diode) Symbol , G H J K L M N P Q R S SE1 G1 SE2 G2 Isolated Mounting Insulated Metal Copper
Powerex
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FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v mosfet 100a 600v

N mosfet 250v 600A

Abstract: mosfet 600V 100A ST QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module , 250V 240A Mosfet / 600V 600A Fast Diode Electrical Characteristics Characteristics (Each Mosfet or , D E F G H J K L M N P Q R S SE1 G1 SE2 G2 NC NC E2 Isolated Mounting , Rds(on) Fast Diodes (6) FS40SM-5 Chips per Mosfet Switch (6) H Series 100A 600V Chips per diode
Powerex
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mosfet 600V 100A ST MOSFET Module mosfet j 114 M5 DIODE mosfet low idss mosfet 600a 600v

N mosfet 250v 600A

Abstract: e s n e c e s s a r y m e a s u re m e n t f u n c t i o n s a n d s h o r t c i rc u i t , design connecting all power MOSFET devices in parallel, to insure high accuracy load control with minimal drift (less than 0.15% of the current setting). The MOSFET technology keeps the input impedance to , ~600A 1.5V @ 2.5A 3V @ 5A 1.5V @ 25A 3V @ 50A 0.5V @ 30A 1V @ 60A 0.5V @ 300A 1V @ 600A 0~5A 1.4mA 0.1%+0.1%F.S. 0~50A 14mA 0.2%+0.1%F.S. 0~60A 16mA 0.1%+0.1%F.S. 0~600A
dataTec
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A632001 A632002 A632003 A632004

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A , Fork Lift, Microwave Oven 5. Conclusion APEC '99 Planar versus Trench-Gate MOSFET Unit Cell Comparison Source Source Gate Gate n+ RChannel RJFET p Rn- n- Planar Gate Cell RChannel n- Rnn+ Drain n+ p n+ Drain Trench Gate Cell APEC , Prototype 600V Trench IGBT developed 1994 - 400V Strobe Flash IGBT production started 1995 - 250V 400A, 600A Trench gate IGBT module production started 1998 - 1200V Trench IGBT developed 1999 - Production
Powerex
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CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CM300DU-24F CY25AAJ-8 350VDC CM600HA-5F CM450HA-5F CM350DU-5F

N mosfet 250v 600A

Abstract: MOSFET â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ P-Channel Surface Mount (IRFR9214) Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -250V R d s (o ii ) Id = , -0.25 v/°c Reference to 25°C, Id = -1mA â'" n VGs = -10V, Id = -1.7A © 3.0 â'" V -2.0 -4.0 VDS = VGS, Id = -250pA 0.9 S VDS = -50V, lD = -1.7A â'" -100 VDs = -250V, VG = 0V S pA -500 , -2.7A. (See Figure 12) ® Iso ^ -2.7A, di/dt < 600A/ps, Vpo < V(br)dsS' Tj < 150°C Min. Typ. Max
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OCR Scan
IRFU120 D02R7S7 IRFR/U9214

N mosfet 250v 600A

Abstract: -50V, I D = -1.7A -100 VDS = -250V, VGS = 0V µA -500 VDS = -200V, VGS = 0V, TJ = 150°C 100 VGS = , Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ ­­­ -2.7 showing the A G , ) ISD -2.7A, di/dt 600A/µs, VDD V (BR)DSS, TJ 150°C Pulse width 300µs; duty cycle 2%. This , C O UTLINE TO -252AA . 4.57 (.180) 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO , A N IR F R 120 W IT H A S S E MB L Y LOT C OD E 9U 1P IN T E R N A T IO N A L R E CT IF IE R
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48V 30A SPDT RELAY

Abstract: schematic diagram 230VAC to 24VDC POWER SUPPLY . . . . . . . . . . . MOSFET Relays . . . . . . . . . . . . . . . . . . . . . . . . . . . PCB , 8L02-05-00 108-1666 8L41-12-011 108-1677 Diode 0.25/0.05 100 x 106 (N/C) -20 to +85°C 2501 2502 , to +85°C -20 to -20 to ating +85°C +85°C 100V* 0.5A 10W 250V 622633 COIL H = 9.4 , ) 200V dc Switching SPNO/DPNO SPCO (Form A) (Form C) 0.5V dc 200V dc 500mA 250mA 10W 3W 250V , ) Switching current A (max) Switch carry current A (max) Mftrs. MOSFET Relays - Avago Photo MOSFET
Farnell Electronics
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48V 30A SPDT RELAY schematic diagram 230VAC to 24VDC POWER SUPPLY PCH-124 marking code W16 SMD Transistor PA66 - GF 25 relay IM03D

N mosfet 250v 600A

Abstract: IRFR9214 PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET® Power MOSFET l l l l l l P-Channel , Avalanche Rated D VDSS = -250V RDS(on) = 3.0 G ID = -2.7A S Description Third Generation , = VGS, I D = -250µA ­­­ S VDS = -50V, I D = -1.7A -100 VDS = -250V, VGS = 0V µA -500 VDS = , Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ­­­ , mH RG = 25, IAS = -2.7A. (See Figure 12) ISD -2.7A, di/dt 600A/µs, VDD V (BR)DSS, TJ 150
International Rectifier
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IRFR P-Channel MOSFET
Abstract: D HEXFET® Power MOSFET VDSS = -250V RDS(on) = 3.0 G S ID = -2.7A Third Generation , VDS = -250V, VGS = 0V µA -500 VDS = -200V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 14 ID , Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol -2.7 showing the A G integral reverse , °C, L = 27mH RG = 25, IAS = -2.7A. (See Figure 12) ISD -2.7A, di/dt 600A/µs, VDD V(BR)DSS, TJ 150 , 16, 1999 IN THE AS S EMBLY LINE "A" N ote: "P" in as s embly line pos ition indicates "Lead-Free" International Rectifier
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IRFR/U9214P EIA-481 EIA-541
Abstract: PD - 9.1658A PRELIMINARY IRFR/U9214 HEXFET® Power MOSFET D l l l l l l P-Channel , Avalanche Rated VDSS = -250V RDS(on) = 3.0 G S ID = -2.7A Description Third Generation HEXFETs , -250µA ­­­ S VDS = -50V, I D = -1.7A -100 VDS = -250V, VGS = 0V µA -500 VDS = -200V, VGS = 0V, TJ = 150 , Conditions D MOSFET symbol ­­­ ­­­ -2.7 showing the A G integral reverse ­­­ ­­­ -11 p-n junction diode. S , RG = 25, IAS = -2.7A. (See Figure 12) ISD -2.7A, di/dt 600A/µs, VDD V (BR)DSS, TJ 150 International Rectifier
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Abstract: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET® Power MOSFET l l l l l l P-Channel , Avalanche Rated D VDSS = -250V RDS(on) = 3.0â"¦ G ID = -2.7A S Description Third , -100 VDS = -250V, VGS = 0V µA -500 VDS = -200V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 , Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET , Figure 12) ƒ ISD ≤ -2.7A, di/dt ≤ 600A/µs, VDD ≤ V (BR)DSS, TJ ≤ 150°C Â" Pulse width â International Rectifier
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gs 1117 ax

Abstract: W923 /U9214 HEXFET® Power MOSFET V d s s = -2 5 0 V R D S (on) = 3 . 0 Q. ID = - 2 . 7 A Third , . -2.7 -1.7 -1 1 Units A W W /°C V mJ A mJ V /n s PD @ Tc = 2 5 °C 50 0.40 20 100 -2.7 , Junction-to-Case Junction-to-A m bient (PCB m ount)* Ju ncti o n- to-Am bi e nt Typ. - - - Max. 2.5 50 , -50V, I d = -1.7A VDS = -250V, VGS = VDS = - 2 0 0 V, VGs = VGS = 20V 0V 0 V, Drain-to-Source , ("Miller1 1 ) Charge Turn-O n Delay Tim e RiseTim e Turn-O ff Delay Tim e Fall Time Internal Drain
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OCR Scan
gs 1117 ax W923

IRU1239SC

Abstract: iru1239 Std. Pack Description 15 1600V 100.000A MTP Coun try Of Differentiat Origi PBF ROHS Regi ed n , -220 500V Single N-Channel HEXFET Power MOSFET in a 15 MTP package 15 500V 19.000A MTP 15 500V 19.000A
Shenzhen Shouhe Technology
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IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10
Abstract: simple design of low-power electrical converters. With switching MOSFET and current detection resistor , ® Power Supply Voltage range: 8.5V to 25.0V  Operating Current: Normal: 0.60mA (Typ) Burst , UVLO function prevents damage to MOSFET by stopping switching operations by latch protection when the VCC pin voltage drops to VCC < VUVLO2 (= 7.5V Typ). The VCC OVP function prevents damage to MOSFET , turned OFF. In addition, when the driver MOSFET is turned ON, surge current occurs at each capacitor ROHM
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BD550FHG
Abstract: non-isolated devices. IC enables simple design of low-power electrical converters. With switching MOSFET and , contributes to low EMI. ●Key Specifications  Power Supply Voltage range: 8.5V to 25.0V ï , Figure 6 for OVP latch operation). The UVLO function prevents damage to MOSFET by stopping switching , function prevents damage to MOSFET by stopping switching operations when the VCC pin voltage exceeds VOVP1 , turned OFF. In addition, when the driver MOSFET is turned ON, surge current occurs at each capacitor ROHM
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BD7673AG
Abstract: simple design of low-power electrical converters. With switching MOSFET and current detection resistor , ® Power Supply Voltage range: 8.5V to 25.0V  Operating Current: Normal: 0.60mA (Typ) Burst , UVLO function prevents damage to MOSFET by stopping switching operations by latch protection when the VCC pin voltage drops to VCC < VUVLO2 (= 7.5V Typ). The VCC OVP function prevents damage to MOSFET , turned OFF. In addition, when the driver MOSFET is turned ON, surge current occurs at each capacitor ROHM
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BD552JLFV

Abstract: switching is achieved, and this contributes to the low EMI noise. And due to the switching MOSFET and the , Min ON æ™'é"å'•ä½ Max Duty å'•ä½ 2.50V VDD , ON duty (turn OFF) of the switching MOSFET is controlled by ISNS pin(11pin), and the OFF duty (turn , .001 Datasheet BD552JLFV/F (2-2) LEBï¼Leading Edge Blanking) Function While the switching MOSFET turns , by the capacitance between the transistor and the Vds of the MOSFET. This resonance waveform is
ROHM
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BD552JLFV

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter .14 DRIVERS AND DRIVER-RF MOSFET HIGH , MOSFET family: 1) MOSFET 2) FREDFETs have a fast recovery body diode characteristic, providing , , Power MOS 8TM MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a , /reliability requirements. If a fast recovery body diode is not needed, MOSFET versions are available. 6 Power MOS 8TM MOSFETs / FREDFETs BV(DSS) Volts RDS(ON) Max ID MOSFET Part # 4.00 4
Microsemi
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smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 10F-A

OMRON G2V-2 12V relay

Abstract: spdt 6v 1a relay min. 250V DC min. â'"40°C to +85°C â'"55°C to +125°C 30LCg min. Order code 60-2416 , . 250V 100mΩ max. 0.5ms max. 0.2ms max. 1 x 1011 min. 1 x 108 min. â'"40°C to +85°C , PhotoMOS relays in an 8-pin 9.78 x 6.4 x 3.9mm DIP package. â'¢ LED and optoelectronic inputs â'¢ MOSFET , shock â'¢ IMO type SRMA AQW210EH 2 x N/O 350V 120mA 0.25ms 0.28ms 0.43ms 0.46ms 0.05ms 0.04ms , -pin SIL package. â'¢ LED and optoelectronic inputs â'¢ MOSFET output stages â'¢ Provides extremely high
Rapid Electronics Catalog
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OMRON G2V-2 12V relay spdt 6v 1a relay 5V SPDT relay relay 12V, 70A OMRON G2V-2 6V relay MATSUA compressor codes 1000M

EASY719-AC-RC

Abstract: , XRAPLCESK, should be installed for voltages greater than 250V (L1, L2, L3) between identical terminal points , installed for voltages greater than 250V (L1, L2, L3) between identical terminal points of adjacent modules , , XRAPLCESK, should be installed for voltages greater than 250V (L1, L2, L3) between identical terminal points , installed for voltages greater than 250V (L1, L2, L3) between identical terminal points of adjacent modules , , should be installed for voltages greater than 250V (L1, L2, L3) between identical terminal points of
EATON
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EASY719-AC-RC V7-T3-19 V7-T3-49 9575H V7-T3-122 V7-T3-126 V7-T3-145
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